Cerfe Labs, Inc.

Saurabh Vinayak Suryavanshi

Carlos Alberto Paz De Araujo

Lucian Shifren

Jolanta Bozena Celinska

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) such as in a CEM device capable of switching between and/or among impedance states. In particular embodiments, a CEM may be formed from one or more transition metal oxides (TMOs), one or more post transition metal oxides (PTMOs) or one or more post transition metal chalcogenides (PTMCs), or a combination thereof.

Formation of a correlated electron material (CEM)

Methods are disclosed herein for controlling the switching characteristics of correlated electron material (CEM) switching devices. The methods comprise one or more of controlling a density of grain boundaries in the CEM layer, controlling an open pore porosity in the CEM layer and controlling a surface area of exposed surfaces of the CEM layer during the fabrication of the CEM switching devices.

Growing community of inventors

Mountain View, CA, United States of America

Saurabh Vinayak Suryavanshi