Applied Materials, Inc.

Saurabh M Chaudhari

Yao-Hung Yang

Aniruddha Pal

Dien-Yeh Wu

Siamak Salimian

Sudhir R Gondhalekar

Yikai Chen

Boon Sen Chan

Eric Ruhland

Scott Lin

Philip Wayne Nagle

Tianshu Li

A method for forming a part for a process chamber incorporates a substrate core in the part. The method may include performing a silicon carbide (SIC) deposition process on a substrate to form a SiC coating of approximately 1 mm to approximately 2 mm on all sides of the substrate to form a composite SiC structure where the substrate is composed of a stack of a plurality of substrates each with a thickness of approximately 1 mm to approximately 2 mm and separating the stack of the plurality of substrates of the composite SiC structure to form multiple composite structures where each multiple composite structure has an SiC coating on a top surface and on all side surfaces and a bottom surface of exposed substrate material.

Composite structures for semiconductor process chambers

Seal for an assembly in a vapor deposition chamber

Growing community of inventors

Santa Clara, CA, United States of America

Saurabh M Chaudhari