North Carolina State University

Clemson University

Saurabh Chopra

Apparao M Rao

Veena Misra

Mehmet C Ozturk

A method of fabricating a semiconductor device includes forming a strained first semiconductor layer on an insulating layer that is between second semiconductor layers. The strained first semiconductor layer may be epitaxially grown from the second semiconductor layers to extend onto the insulating layer between the second semiconductor layers. The second semiconductor layers have a lattice constant that is different than that of the first semiconductor layer, such that strain may be created in the first semiconductor layer. Related devices are also discussed.

Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices

Disclosed are resonant gas sensors and methods for forming and using the disclosed sensors. The sensors include a resonator including a layer comprising adsorptive nanostructures, for example carbon nanotubes, activated carbon fibers, or adsorptive nanowires. The dielectric of the resonator is in electrical communication with the layer comprising adsorptive nanostructures such that the effective resonant frequency of the resonator depends on both the dielectric constant of the dielectric as well as the dielectric constant of the adsorptive layer. In some embodiments, the nanostructures can be degassed. The sensors can detect the presence of polar gases, non-polar gases, organic vapors, and mixtures of materials with both high sensitivity and high selectivity.

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Raleigh, NC, United States of America

Saurabh Chopra