Texas Instruments Corporation

Saumya Gandhi

Matthew David Romig

Steven Alfred Kummerl

Abram M Castro

Siva Prakash Gurrum

Frank Stepniak

Manu Joseph Prakuzhy

Matthew John Sherbin

A method to improve transistor performance uses a wafer () of single-crystalline semiconductor with a first zone () of field effect transistors (FETs) and circuitry at the wafer surface, and an infrared (IR) laser with a lens for focusing the IR light to a second depth () farther from the wafer surface than the first depth of the first zone. The focused laser beam is moved parallel to the surface across the wafer to cause local multi-photon absorption at the second depth for transforming the single-crystalline semiconductor into a second zone () of polycrystalline semiconductor with high density of dislocations. The second zone has a height and lateral extensions, and permanently stresses the single-crystalline bulk semiconductor; the stress increases the majority carrier mobility in the channel of the FETs, improving the transistor performance.

Method for improving transistor performance

In a described example, a packaged device includes a substrate having a device mounting surface including a first layer of conductive material having a first thickness less than a substrate thickness, the substrate having a second layer of the conductive material having a second thickness less than the substrate thickness. A first semiconductor device is mounted to a first area of the device mounting surface; and a second semiconductor device is mounted to a second area on the device mounting surface and spaced from the first semiconductor device. At least two connectors are formed of the first layer of the substrate having first ends coupled to one of first bond pads on the first semiconductor device and the at least two connectors having second ends coupled to one of second bond pads on the second semiconductor device.

Packaged multichip module with conductive connectors

A packaged semiconductor system, including: at least one electronic device on a device mounting surface of a substrate having terminals for attaching bond wires; at least one discrete component adjacent to the at least one electronic device, a second electrode of the at least one discrete component parallel to and spaced from a first electrode by a component body; the first electrode a metal foil having a protrusion extending laterally from the body and having a surface facing towards the second electrode; bonding wires interconnecting respective terminals of the at least one electronic device, the first electrode and the second electrode, and bonded to the surface of the second electrode and to the protrusion that extend away from the respective surfaces in a same direction; and packaging compound covering portions of the at least one electronic device, the at least one discrete component, and the bonding wires.

Packaged semiconductor system having unidirectional connections to discrete components

An electronic system comprising an electronic body () with terminal pads () and at least one capacitor embedded in the electronic body. The capacitor including an insulating and adhesive first polymeric film () covering the body surface except the terminal pads; a sheet () of high-density capacitive elements, the first capacitor terminal being a metal foil () attached to film (), the second terminal a conductive polymeric compound (), and the insulator a dielectric skin (). Sheet () has sets of via holes: the first set holes reaching metal foil), the second set holes reaching the terminals (), and the third set holes reaching the conductive polymeric compound (). An insulating second polymeric film () lining the sidewalls of the holes and planarizing the sheet surface; and metal () filling the via holes between the polymeric sidewalls and forming conductive traces and attachment pads on the system surface.

Growing community of inventors

Irving, TX, United States of America

Saumya Gandhi