Microsoft Technology Licensing, LLC

Saulius Vaitiekėnas

Charles Masamed Marcus

Michael Hartley Freedman

Chetan Vasudeo Nayak

Roman Mykolayovych Lutchyn

Torsten Karzig

Peter Krogstrup Jeppesen

Georg Wolfgang Winkler

Bernard Van Heck

Shivendra Upadhyay

A method of selectively etching a metal component of a workpiece further comprising a ferromagnetic insulator component. The method comprises contacting the metal component with an etchant solution. The etchant solution comprises a basic etchant and a solvent. The method is useful in the context of the fabrication of semiconductor-superconductor-ferromagnetic insulator hybrid devices, for example. The etchant solution may not attack the ferromagnetic insulator component. Also provided is a composition for etching a metal, and a kit comprising the composition and a composition for depositing a styrene-acrylate co-polymer on a surface.

Method of selectively etching a metal component

The disclosure relates to a quantum device and method of fabricating the same. The device comprises one or more semiconductor-superconductor nanowires, each comprising a length of semiconductor material and a coating of superconductor material coated on the semiconductor material. The nanowires may be formed over a substrate. In a first aspect at least some of the nanowires are full-shell nanowires with superconductor material being coated around a full perimeter of the semiconductor material along some or all of the length of the wire, wherein the device is operable to induce at least one Majorana zero mode, MZM, in one or more active ones of the full-shell nanowires. In a second aspect at least some of the nanowires are arranged vertically relative to the plane of the substrate in the finished device.

Form and fabrication of semiconductor-superconductor nanowires and quantum devices based thereon

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Copenhagen, Denmark

Saulius Vaitiekėnas