Koninklijke Philips Corporation N.V.

Philips Electronics North America Corporation

Satyen Mukherjee

Ton Mobers

Theodore James Letavic

Lucian Remus Albu

Daniel Robert Elgort

Naveed Majid

J Van Zwol

Arno Emmerik

A device capable of producing a high resolution chemical analysis of a sample, such as fluid, is based upon nuclear magnetic resonance (NMR) spectroscopy. The nuclear magnetic polarizations of the sample are generated by sequentially illuminating the sample with a focused beam of light carrying angular orbital angular momentum (OAM) and possibly momentum (spin). Unlike in a typical NMR used for magnetic nuclear resonance imaging (MRI) or spectroscopy, the present device does not make use of a strong magnet.

Nuclear magnetic resonance spectroscopy using light with orbital angular momentum

A multiple semiconductor chip (multi-chip) module for use in power applications includes at least a power semiconductor chip and a control semiconductor chip mounted on an electrically conductive heat sink. The power semiconductor chip may be a Silicon-On-Insulator (SOI) device and the control semiconductor chip may be a semiconductor device having a substrate connected to ground potential. The power semiconductor chip and the control semiconductor chip are directly mounted on the electrically conductive heat sink without the use of a separate electrical insulation layer in order to obtain a multi-chip module which is simple and economical to manufacture, and which offers superior performance characteristics.

Multiple semiconductor chip (multi-chip) module for use in power applications

An integrated circuit for controlling an array of LEDs includes at least one signal amplifier, signal processing means, driver means for driving the array of light emitting diodes, at least one switch, and control means for controlling the integrated circuit. The integrated circuit is formed using silicon-on-insulator technology and is selectively shielded from the array of LEDs. The integrated drive electronics with silicon-on-insulator technology will allow for improved white light generation.

Integrated LED drive electronics on silicon-on-insulator integrated circuits

A multiple semiconductor chip (multi-chip) module includes at least an output semiconductor chip and a control semiconductor chip mounted on an electrically conductive heat sink. The output semiconductor chip may have a bulk substrate configuration and the control semiconductor chip may have a Silicon-On-Insulator (SOI) configuration. The output semiconductor chip and the control semiconductor chip are directly mounted on the electrically conductive heat sink without the use of a separate electrical insulation layer in order to obtain a multi-chip module which is simple and economical to manufacture, and which offers superior performance characteristics such as enhanced heat sink efficiency and reduced EMI.

Semiconductor module having multiple semiconductor chips

A silicon-on-insulator (SOI) hybrid transistor device structure includes a substrate, a buried insulating layer on the substrate, and a hybrid transistor device structure formed in a semiconductor surface layer on the buried insulating layer. The hybrid transistor device structure may advantageously include at least one MOS transistor structure and at least one conductivity modulation transistor structure electrically connected in parallel. In a particularly advantageous configuration, the MOS transistor structure may be an LDMOS transistor structure and the conductivity modulation transistor structure may be an LIGB transistor structure, with the hybrid transistor device being formed in a closed geometry configuration. This closed geometry configuration may have both substantially curved segments and substantially straight segments, with MOS structures being formed in the curved segments and conductivity modulation transistor structures being formed in the straight segments. Hybrid transistor device structures in accordance with the invention feature excellent operating characteristics in high current, high voltage circuit applications, and in particular in source-follower circuit applications.

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Yorktown Heights, NY, United States of America

Satyen Mukherjee