International Business Machines Corporation

Satyapal S Bhatia

Jacob Riseman

Harsaran S Bhatia

Emmanuel A Valsamakis

Suresh D Kadakia

Raymond Morris Bryant

Christopher D Setzer

Michael S Cranmer

Richard O Seeger

Harsaran S Bahatia

A process for the manufacture of a multilayer ceramic substrate includes fabricating the multilayer ceramic substrate from a monolith fabricated from universal layers and a monolith fabricated from custom layers. The universal layer monolith and the custom layer monolith are then joined to form the complete structure of the MLC substrate.

Process for the manufacture of multilayer ceramic substrates

A method and resulting structure for making contact to a narrow width PN junction region in any desired semiconductor body is described. A substantially vertical conformal conductive layer is formed over the desired PN junction region. The body is heated at a suitable temperature to cause a dopant to diffuse from the vertical conductive layer into the semiconductor body to form the narrow width PN junction region. A substantially horizontal conductive layer makes contact to the substantially vertical layer so as to have the horizontal conductive layer in electrical contact to the PN junction region. Electrical contact can be made to the horizontal conductive layer at any convenient location. A lateral PNP transistor is one type of very small device that can be made using the method of the present invention.

Structure for contacting a narrow width PN junction region

A method for making contact to a narrow width PN junction region in any desired semiconductor body is described. A substantially vertical conformal conductive layer is formed over the desired PN junction region. The body is heated at a suitable temperature to cause a dopant to diffuse from the vertical conductive layer into the semiconductor body to form the narrow width PN junction region. A substantially horizontal conductive layer makes contact to the substantially vertical layer so as to have the horizontal conductive layer in electrical contact to the PN junction region. Electrical contact can be made to the horizontal conductive layer at any convenient location. A lateral PNP transistor is one type of very small device that can be made using the method of the present invention.

Method for contacting a narrow width PN junction region

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Wappingers Falls, NY, United States of America

Satyapal S Bhatia