International Business Machines Corporation

Advanced Micro Devices Corporation

Satya Venkata Nitta

Sampath Purushothaman

Matthew Earl Colburn

Shom Ponoth

Timothy Joseph Dalton

Jonathan Lenchner

Elbert Emin Huang

Sharad C Sundararajan

Christian Makaya

Jason L Crawford

Keith William Grueneberg

Chih-Chao Yang

Daniel C Edelstein

Katherine Lynn Saenger

Muthumanickam Sankarapandian

Charles Thomas Black

Maheswaran Surendra

Kathryn Wilder Guarini

Anna Karecki, Legal Representative

Lawrence Alfred Clevenger

Robert Dennis Miller

Alfred Grill

Stephen McConnell Gates

Griselda Bonilla

Terry Allen Spooner

Donald Francis Canaperi

Willi Volksen

John Christopher Arnold

Mahadevaiyer Krishnan

William J Cote

Geraud J Dubois

Maxime Darnon

E Todd Ryan

Anthony David Lisi

Sean P E Smith

Shom Ponth

A meeting summarization method, system, and computer program product, include compiling notes from a meeting between a plurality of users and providing a single document that summarizes the meeting based on the compiled notes.

Summarization method for recorded audio

A meeting summarization method, system, and computer program product, include capturing notes of a user including a time stamp from the user associated with a meeting, synchronizing an agenda of the meeting and the notes of the user based on a correlation between a time stamp of a topic on the agenda and a time stamp of the notes of the user, and analyzing the synchronized topic and the notes to determine highlights of the meeting based on a co-occurrence of the time stamp of the notes of the user and the time stamp of the topic on the agenda.

System, method and computer program product for creating a summarization from recorded audio of meetings

A dual damascene article of manufacture comprises a trench containing a conductive metal column where the trench and the conductive metal column extend down into and are contiguous with a via. The trench and the conductive metal column and the via have a common axis. These articles comprise interconnect structures incorporating air-gap spacers containing metal/insulator structures for Very Large Scale Integrated (VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging. The trench in this regard comprises a sidewall air-gap immediately adjacent the side walls of the trench and the conductive metal column, the sidewall air-gap extending down to the via to a depth below a line fixed by the bottom of the trench, and continues downward in the via for a distance of from about 1 Angstrom below the line to the full depth of the via. In another aspect, the article of manufacture comprises a capped dual damascene structure.

Interconnect structures incorporating air gap spacers

A meeting summarization method, system, and computer program product, include recording meeting audio of a meeting, capturing notes including a time stamp from each of a plurality of users associated with the meeting, synchronizing the recorded meeting audio of the meeting and each of the notes of each of the plurality of users based on a correlation between the time stamp, and analyzing the synchronized meeting audio and notes to determine highlights of the meeting based on a co-occurrence of notes between the plurality of users.

Interconnect structures incorporating air-gap spacers

Method for manufacturing interconnect structures incorporating air gap spacers

A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and introducing a regular array of vertically aligned nanoscale pores through stencil formation and etching to form a hole array and subsequently pinching off the tops of the hole array with a cap dielectric. Variations of the method and means to construct a multilevel nanocolumnar interconnect structure are also described.

Interconnect structures with engineered dielectrics with nanocolumnar porosity

Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

Methods to mitigate plasma damage in organosilicate dielectrics

A process to produce an airgap on a substrate having a dielectric layer comprises defining lines by lithography where airgaps are required. The lines' dimensions are shrunk by a trimming process (isotropic etching). The tone of the patterns is reversed by applying a planarizing layer which is etched down to the top of the patterns. The photoresist is removed, leading to sub-lithographic trenches which are transferred into a cap layer and eventually into the dielectric between two metal lines. The exposed dielectric is eventually damaged, and is etched out, leading to airgaps between metal lines. The gap is sealed by the pinch-off occurring during the deposition of the subsequent dielectric.

Reversing tone of patterns on integrated circuit and nanoscale fabrication

Growing community of inventors

Poughquag, NY, United States of America

Satya Venkata Nitta