Sandisk Technologies Inc.

Satya Kesav Gundabathula

Muralitharan Jayaraman

Narendhiran Chinnaanangur Ravimohan

Ramkumar Ramamurthy

Balakumar Rajendran

Narendhiran Cr

Rohit Sathyanarayan

Chittoor Devarajan Sunilkumar

Satrajit Chakraborty

A memory system may be configured to perform immediate folding of data from a low storage density area to a high storage density area. A low storage density target area may be monitored, and when a capacity of the low storage density target area reaches a threshold level, data stored in the low storage density target area may be folded to an associated high storage density target area. The memory system may utilize a pointer system to manage the folding of data. The pointer system may also be utilized for read operations in order to avoid updating address mapping tables for both the low storage density and the high storage density areas.

Folding operations in memory systems with single address updates

Technology is described herein for performing memory array operations in multiple memory dies in parallel. The memory dies, or groups of non-volatile memory cells on the memory dies, may exhibit different performance times for memory array operations. For example, non-volatile memory cells on one memory die may program more slowly than those on another memory die. The performance times of the memory dies (or groups of the memory cells on different memory dies) may be characterized relative to one another. Memory dies having similar performance times may be placed into the same meta-groups. Meta-groups may be formed at the die, zone, or block level. The meta-groups can be re-formed over the lifetime of the memory system, which can account for changes in performance times over the lifetime of the memory system.

Meta-groups in non-volatile storage based on performance times

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Bengaluru, India

Satya Kesav Gundabathula