Jx Nippon Mining Metals Corporation

Jx Metals Corporation

Jx Advanced Metals Corporation

Satoyasu Narita

Yoshitaka Shibuya

Hiroki Kajita

Hiroshi Takamura

Masahiro Takahata

Kazuyuki Satoh

Takeshi Gohara

Hirosh Takamura

A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less.

Magnesium oxide sputtering target

Provided is a multi-shank heater to be mounted on a support substrate, wherein, with a normal direction relative to the support substrate, which is a direction from the heater side toward the support substrate side, as a basis, the multi-shank heater has U-shaped pieces in which an angle &#x3b8; of a planar direction of the U-shaped pieces, which is a direction from the heater side toward the support substrate side, is &#xb1;10&#xb0; or more and &#xb1;60&#xb0; or less. An object of the present invention is to provide a multi-shank heater capable of considerably improving the energy output even when the U-shaped pieces are arranged in a high density and have the same pitch.

Multi-shank heater

Provided is a MgAlOsintered body, which includes a relative density of the MgAlOsintered body being 90% or higher, and an L* value in a L*a*b* color system being 90 or more. A method of producing a MgAlOsintered body is characterized by that a MgAlOpowder is hot pressed at 1150 to 1300&#xb0; C., and is thereafter subjected to atmospheric sintering at 1350&#xb0; C. or higher. Embodiments of the present invention address the issue of providing a high density and white MgAlOsintered body and a sputtering target using the sintered body, and a method of producing a MgAlOsintered body.

MgAIOsintered body, sputtering target using the sintered body and method of producing MgAIOsintered body

A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0&#xb0; to 1&#xb0; is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0&#xb0; to 2&#xb0; is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.

MgO sintered sputtering target

The present invention provides a niobium oxide sintered compact having a composition of NbO(2&#x3c;x&#x3c;2.5), and specifically provides a niobium oxide sintered compact which can be applied to a sputtering target for forming a high-quality resistance change layer for use in ReRAM. In particular, the present invention aims to provide a high-density niobium oxide sintered compact suitable for stabilizing the sputtering process.

Niobium oxide sintered compact, sputtering target formed from said sintered compact, and method of producing niobium oxide sintered compact

The present invention relates to a NbOsintered compact characterized in that the intensity proportion of the X-ray diffraction peak intensity of a (001) plane or (110) plane of NbOrelative to the X-ray diffraction peak intensity of a (400) plane of NbOis 1% or less. The present invention provides, without using an expensive NbOmaterial, a NbOsintered compact that can be applied to a sputtering target for forming a high-quality variable resistance layer for a ReRAM. In particular, it is an object of the present invention to provide a single phase NbOsintered compact having a high density suitable for stabilizing sputtering.

NbO2 sintered compact, sputtering target comprising the sintered compact, and method of producing NbO2 sintered compact

The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-3N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700&#xb0; C. to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component.

Method for producing high-purity lanthanum, high-purity lanthanum, sputtering target formed from high-purity lanthanum, and metal gate film having highy-purity lanthanum as main component

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Ibaraki, Japan

Satoyasu Narita