Canon Kabushiki Kaisha

Satoshi Yoshizaki

Nobutaka Ukigaya

Koji Hara

Atsushi Kanome

Mikio Arakawa

Masahiko Kondo

A manufacturing method for a semiconductor device, the method, comprising forming, on a substrate, a first resist pattern including a plurality of line patterns extending in a predetermined direction, injecting an impurity into the substrate by using the first resist pattern, removing the first resist pattern, forming a second resist pattern including a plurality of second line patterns extending in the predetermined direction, and injecting an impurity into the substrate by using the second resist pattern, wherein, in the forming the second resist pattern, the plurality of second line patterns are respectively formed between places where the adjacent first line patterns are formed.

Manufacturing method for semiconductor device using resist patterns and impurity injections

A method for manufacturing a semiconductor device comprising, forming a first photoresist pattern by exposing and then developing a first photoresist film formed on a substrate, irradiating the first photoresist pattern with UV light to cure its surface, forming a second photoresist film so as to cover the substrate and the first photoresist pattern, forming a second photoresist pattern and performing ion implantation in the substrate using the second photoresist pattern. The second photoresist pattern is not subjected to UV irradiation after the second photoresist film has been developed and before the ion implantation is performed, or is irradiated with the UV light, after the second photoresist film has been developed and before the ion implantation is performed, under a reduced condition relative to that for the first photoresist pattern.

Growing community of inventors

Tachikawa, Japan

Satoshi Yoshizaki