Kobe Steel, Ltd.

Samsung Display Co., Ltd.

Satoshi Yasuno

Toshihiro Kugimiya

Aya Miki

Shinya Morita

Jae Woo Park

Je Hun Lee

Byung Du Ahn

Gun Hee Kim

Yasuaki Terao

Yumi Iwanari

Hiroaki Tao

Takeaki Maeda

Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.

Oxide for semiconductor layer of thin film transistor, sputtering target, and thin film transistor

The oxide of the present invention for thin-film transistors is an In&#x2014;Zn&#x2014;Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In&#x2014;Zn&#x2014;Sn-based oxide are expressed by [Zn], [Sn], and [In], the In&#x2014;Zn&#x2014;Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])&#x2264;0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])&#x3e;0.5.[In]/([In]+[Zn]+[Sn])&#x2264;0.3&#x2003;&#x2003;(1),[In]/([In]+[Zn]+[Sn])&#x2264;1.4&#xd7;{[Zn]/([Zn]+[Sn])}&#x2212;0.5&#x2003;&#x2003;(2),[Zn]/([In]+[Zn]+[Sn])&#x2264;0.83&#x2003;&#x2003;(3),and0.1&#x2264;[In]/([In]+[Zn]+[Sn])&#x2003;&#x2003;(4).According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.

Oxide for semiconductor layer of thin-film transistor, semiconductor layer of thin-film transistor having said oxide, and thin-film transistor

There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.

Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer. The present invention makes it possible to obtain an interconnect structure having excellent switching characteristics and high stress resistance, and in particular, showing a small variation of threshold voltage before and after the stress tests, and thereby having high stability.

Interconnect structure and sputtering target

This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])&#x2267;&#x2212;0.53&#xd7;[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])&#x2267;2.28&#xd7;[Zn]/([Zn]+[Sn])&#x2212;2.01 (2) [In]/([In]+[Zn]+[Sn])&#x2266;1.1&#xd7;[Zn]/([Zn]+[Sn])&#x2212;0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.

Growing community of inventors

Kobe, Japan

Satoshi Yasuno