National Institute of Advanced Industrial Science and Technology

Shin-Etsu Chemical Co., Ltd.

Kanazawa University

Samsung Electronics Co., Ltd.

Denso Corporation

Other

Nissan Motor Company Limited

Japan Science and Technology Agency

Kyoto University

Agency of Industrial Science and Technology Ministry of International

Industrial Science and Technology

National Institute of Advanced

National University Corporation Kanazawa University

Satoshi Yamasaki

Hiromitsu Kato

Toshiharu Makino

Masahiko Ogura

Daisuke Takeuchi

Norio Tokuda

Hitoshi Noguchi

Takao Inokuma

Hideyo Okushi

Tsubasa Matsumoto

Hiroyuki Kawashima

Shozo Shirai

Kazunobu Tanaka

Daisuke Kuwabara

Hideyo Ookushi

Mutsuko Hatano

Norikazu Mizuochi

Doo-sup Hwang

Takayuki Iwasaki

Tetsuji Yasuda

Kazuyuki Ikuta

Mitsuhiro Kataoka

Satoshi Tanimoto

Akihisa Matsuda

Yuji Kimura

Kazuhiro Oyama

Susumu Sobue

Shinichi Shikata

Norihiko Kiritani

Hideyuki Watanabe

Hitoshi Umezawa

Hideharu Matsuura

Hidetoshi Oheda

Nobuhiro Hata

Takuma Minamiyama

Sung-Gi Ri

The present invention provides a novel semiconductor device for high breakdown voltage having no drift layer. The semiconductor device includes a first semiconductor layer of a first conductivity type which is either a p-type or an n-type conductivity type, a source portion arranged so as to be in contact with the first semiconductor layer and configured as a semiconductor portion of a second conductivity type different from the first conductivity type, a source electrode arranged in ohmic contact with the source portion, a gate electrode arranged on at least one selected from surfaces of the first semiconductor layer via a gate insulating film interposed therebetween and capable of forming by an applied electric field, an inversion layer in a region of the first semiconductor layer near the surface of the first semiconductor layer contacting the gate insulating film, a second semiconductor layer of the first conductivity type arranged so as to be in contact with the inversion layer, and a drain electrode separated from the inversion layer and arranged in Schottky contact with the second semiconductor layer.

Semiconductor device

A sensor element including a diamond in which nitrogen-vacancy centers in a diamond crystal structure stabilize in a negative charge state. By ensuring that the diamond of the sensor element is n-type phosphorus-doped and contains nitrogen-vacancy centers in the crystal structure, the probability that nitrogen-vacancy centers in the diamond lattice are in a neutral state decreases, and the nitrogen-vacancy centers stabilize in a negative charge state.

Sensor element, measuring device, method for manufacturing sensor element, electronic circuit element, and quantum information element

It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.

Foundation substrate for producing diamond film and method for producing diamond substrate using same

A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

Diamond substrate and freestanding diamond substrate

A diamond crystal according to the present invention has an NV region containing a complex (NV center) of nitrogen substituted with a carbon atom and a vacancy located adjacent to the nitrogen, on a surface or in the vicinity of the surface, wherein the NV region has a donor concentration equal to or higher than the concentration of the NV centers, or a crystal of the NV region is a {111} face or a face having an off-angle that is &#xb1;10 degrees or less against the {111} face, and a principal axis of the NV center is a &#x3c;111&#x3e; axis that is perpendicular to the {111} face. Such a diamond crystal enables almost 100% of the NV center to be a state (NV) of having a negative electric charge, and spin states of the NVcenters to be aligned in one direction.

Diamond crystal, diamond devices, magnetic sensor, magnetic sensor system, and method for manufacturing sensor array

Method for manufacturing diamond substrate

The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.

A method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes a step of measuring flatness of the seed substrate, a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and any one of the following two steps of a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.

Method for manufacturing a single crystal diamond

A semiconductor device includes a MISFET having: a diamond substrate; a drift layer having a first layer with a first density for providing a hopping conduction and a second layer with a second density lower than the first density, and having a &#x3b4; dope structure; a body layer on the drift layer; a source region in an upper portion of the body layer; a gate insulation film on a surface of the body layer; a gate electrode on a surface of the gate insulation film; a first electrode electrically connected to the source region and a channel region; and a second electrode electrically connected to the diamond substrate. The MISFET flows current in the drift layer in a vertical direction, and the current flows between the first electrode and the second electrode.

Semiconductor device using diamond

A white light-emitting device of the present invention includes a substrate (); a diamond semiconductor layer () provided on the substrate (), in which one or a plurality of p-type &#x3b1; layers (), a p-type or n-type &#x3b3; layer (), and one or a plurality of n-type &#x3b2; layers () are laminated in this order from the substrate (); a first electrode () provided on the &#x3b1; layer () which injects an electric current; a second electrode () provided on the &#x3b2; layer () which injects an electric current; and a fluorescent member () which coats a light emission extraction region of the surface of the diamond semiconductor layer.

White light-emitting element

A thermionic power generator includes an emitter generating thermions and a collector collecting the thermions. The emitter includes an emitter substrate having an electric conductivity, a low resistance layer stacked to the emitter substrate and made of an n-type diamond semiconductor that includes phosphorus as a donor, and an electron emission layer stacked to the low resistance layer and made of an n-type diamond semiconductor that includes nitrogen as a donor. The collector includes a collector substrate having an electric conductivity and is disposed opposite to the emitter via a clearance. The electron emission layer has a thickness equal to or less than 40 nm.

Thermionic power generator

The present invention provides a diamond semiconductor device which includes: a diamond substrate; a diamond step section disposed over substrate surface of the diamond substrate having a {001} crystal face to rise substantially perpendicularly to substrate surface; an n-type phosphorus-doped diamond region; and a diamond insulation region. In the diamond step section, a first step section having a {110} crystal face over a side surface is integrated with a second step section having a {100} crystal face over a side surface. The phosphorus-doped diamond region is formed by crystal growth started from base angle of the step shape of the first step section over the side surface of the first step section and substrate surface of the diamond substrate as growth base planes. The diamond insulation region is formed by crystal growth over the side surface of the second step section and substrate surface of the diamond substrate as growth base planes.

Diamond semiconductor device and method for manufacturing same

In this junction element, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer, prohibiting electrons present in an electrode layerto move into the semiconductor layer. For this reason, a majority of holes in a semiconductor layerdo not disappear by recombination with conduction electrons in the semiconductor layer, but reach the electrode layerwhile diffusing into the semiconductor layer. Accordingly, the junction elementcan serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.

There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same

The present invention is contemplated for providing a diamond semiconductor device where an impurity-doped diamond semiconductor is buried in a selected area, and a method of manufacturing the same. That is, a diamond semiconductor device having an impurity-doped diamond area selectively buried in a recessed portion formed in a diamond substrate; and a method of manufacturing a diamond semiconductor device, including the steps of selectively forming an recessed portion on the {100}-facet diamond semiconductor substrate, wherein the bottom face of the recessed portion is surrounded by the {100} facet and the side face of the recessed portion is surrounded by the {110} facet, and forming an impurity-doped diamond area by epitaxially growing diamond in the &#x3c;111&#x3e; direction while doping with impurities and burying the recessed portion.

Diamond semiconductor device and method of manufacturing the same

Growing community of inventors

Tsukuba, Japan

Satoshi Yamasaki