Tokyo Electron Limited

Satoshi Yamada

Yoshinobu Hayakawa

Taichi Hirano

Nobuyuki Okayama

Koichi Kazama

Shigeki Doba

Yoshimitsu Kon

Shuichiro Uda

Hikoichiro Sasaki

Junji Ishibashi

Fumitoshi Kumagai

Koki Chino

Shinji Fuchigami

Ken Yoshida

In a disclosed method, etching a film by using plasma of a first processing gas and etching the film by using plasma of a second processing gas are alternately repeated. The first processing gas and the second processing gas each include a fluorocarbon gas. In etching the film by using the plasma of the first processing gas and etching the film by using the plasma of the second processing gas, radio frequency power is used to attract ions to the substrate. The first processing gas further includes an additive gas that is a source for nitrogen or sulfur and fluorine. In the first processing gas, the flow rate of the additive gas is smaller than the flow rate of the fluorocarbon gas.

Method of etching, device manufacturing method, and plasma processing apparatus

A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5&#x3c;K&#x3c;1, a constant reflection wave power PRis generated on a high frequency transmission line of a plasma generation system even during a pulse-on period T. Meanwhile, during a pulse-off period T, a reflection wave power PRdecreases. By adjusting the value of K, a balance between the reflection wave power PRduring the pulse-on period Tand the reflection wave power PRduring the pulse-off period Tcan be controlled.

Plasma processing apparatus

A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.

Plasma etching apparatus and plasma etching method

A shower head includes a gas injection plate and a gas supply unit. The gas supply unit has a first gas supply path provided in a region along the axis and a second gas supply path provided in a region surrounding the region where the first gas supply path is provided. The first gas supply path has a first gas diffusion space connected to a first gas line of the gas supply unit, second gas lines, a second gas diffusion space, third gas lines and a third gas diffusion space which are connected in that order. The second gas supply path has a fourth gas diffusion space connected to a fourth gas line of the gas supply unit, fifth gas lines, a fifth gas diffusion space, sixth gas lines, and a sixth gas diffusion space which are connected in that order.

Shower head, plasma processing apparatus and plasma processing method

Growing community of inventors

Miyagi, Japan

Satoshi Yamada