Philips Lumileds Lighting Company LLC

Koninklijke Philips Corporation N.v.

Lumileds LLC

Satoshi Watanabe

Michael Ragan Krames

Nathan Fredrick Gardner

Gerd O Mueller

Yu-Chen Shen

Werner K Goetz

Stephen Andrew Stockman

Gangyi Chen

Michael R Krames

A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.

III-nitride light emitting device with double heterostructure light emitting region

In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6&#xd7;10cmand 5&#xd7;10cm. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6&#xd7;10cm.

A semiconductor light emitting device includes a light emitting layer sandwiched between two spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than in the device with conventional spacer layers, such as GaN spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than about 0.02 C/m. In some embodiments, at least one of the spacer layers is a quaternary alloy of aluminum, indium, gallium, and nitrogen.

III-nitride light emitting device with reduced polarization fields

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Cupertino, CA, United States of America

Satoshi Watanabe