Shin-etsu Chemical Co., Ltd.

Nippon Telegraph and Telephone Corporation

International Business Machines Corporation

Taiyo Yuden Co., Ltd.

Shin-etsu Polymer Co., Ltd.

Satoshi Watanabe

Keiichi Masunaga

Daisuke Domon

Toshinobu Ishihara

Akinobu Tanaka

Shigehiro Nagura

Youichi Ohsawa

Masaki Ohashi

Masaaki Kotake

Yoshio Kawai

Osamu Watanabe

Takeshi Kinsho

Jun Hatakeyama

Tsunehiro Nishi

Katsuya Takemura

Yoshihumi Takeda

Ryuji Koitabashi

Takanobu Takeda

Masahiro Fukushima

Naoya Inoue

Tamotsu Watanabe

Junji Shimada

Takeru Watanabe

Tomohiro Kobayashi

Tsuguo Yamaoka

Kenji Yamada

Koji Hasegawa

Ratnam Sooriyakumaran

Hideo Kaneko

Takayuki Fujiwara

Kazunori Maeda

Tomoyoshi Furihata

Ryosuke Taniguchi

Luisa Dominica Bozano

Toyohisa Sakurada

Kazumasa Maruyama

Katsuyuki Oikawa

Yukio Inazuki

Masayoshi Sagehashi

Jun Watanabe

Linda Karin Sundberg

Takayuki Nagasawa

Takeshi Nagata

Takashi Yoshii

Yoichi Osawa

Akira Ikeda

Seiichiro Tachibana

Daniel Sanders

Tatsushi Kaneko

Fujio Yagihashi

Katsuhiro Kobayashi

Martha Inez Sanchez

Kentaro Kumaki

Yoshitaka Yanagi

Tsutomu Ogihara

Yoshihiro Kubota

Makoto Inoue

Hirofumi Kishita

Hiroki Yoshikawa

Meguru Kashida

Ichiro Kaneko

Kouichi Yamaguchi

Teppei Adachi

Ikuo Fukui

Toshiya Sawai

Akihiro Seki

Takeshi Sasami

Shozo Shirai

Wataru Kusaki

Mitsuo Umemura

Tsukasa Watanabe

Tadahito Matsuda

Shinichi Igarashi

Jiro Nakamura

Hironori Satoh

Kiyoshi Motomi

Kenji Koizumi

Takahiro Suzuki

Yoshinori Matsui

Kousuke Ohyama

Mark Hull Sherwood

Ken'Ichi Itoh

Kaysuya Takemura

Takesi Nagata

Koitabashi Ryuji

An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition forms a pattern having minimal defects and excellent lithography performance factors such as CDU, LWR and DOF.

Onium salt, chemically amplified resist composition and patterning process

A chemically amplified negative resist composition comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1) is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER or LWR.

Chemically amplified negative resist composition and resist pattern forming process

A chemically amplified positive resist composition is provided comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1). The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and CDU.

Chemically amplified positive resist composition and resist pattern forming process

An onium salt having a partial structure of formula (A) is provided wherein Rand Rare hydrogen or a C-Chydrocarbyl group in which hydrogen may be substituted by halogen and —CH— may be replaced by —O— or —C(═O)—, both Rand Rare not hydrogen at the same time, Rand Rmay bond together to form an aliphatic ring. A chemically amplified negative resist composition comprising the onium salt as acid generator forms a pattern of good profile having a high sensitivity, improved dissolution contrast, reduced LWR and improved CDU.

Onium salt, chemically amplified negative resist composition, and pattern forming process

An object of the present invention is to provide a conductive polymer composition which has good filterability and good film formability of a flat film on an electron beam resist and can be suitably used for an antistatic film for electron beam resist writing, showing excellent antistatic property in the electron beam writing process due to the property of low volume resistivity (Ω·cm), and, reducing an effect on lithography by making an effect of an acid diffused from the film minimum, and further having excellent peelability by HO or an alkaline developer after writing. A conductive polymer composition which comprises (A) a polyaniline-based conductive polymer having at least one kind or more of a repeating unit represented by the following general formula (1), and (B) a carboxylic acid salt represented by the following general formula (2):

Conductive polymer composition, coated product and patterning process

An onium salt containing an anion having formula (A1) and a cation having formula (A1-a), (A1-b) or (A1-c) is provided. A chemically amplified negative resist composition comprising the onium salt as acid generator forms a pattern of good profile having a high sensitivity, improved dissolution contrast, reduced LWR and improved CDU.

A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure. 

Resist composition and patterning process

A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and/or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivity, low LWR and CDU, and favorable profile; and a resist patterning process using the composition. 

The present invention is a resist composition comprises a polymer compound having one or two repeating units selected from repeating units represented by the following general formulae (p-1), (p-2) and (p-3), a repeating unit represented by the following formula (a-1) and the formula (a-2) polarities of which are changed by an action of an acid, and a repeating unit represented by the following formula (b-1); a salt represented by the following general formula (B); and a solvent, wherein a difference of a C log P of the repeating unit (a-1) before and after changing the polarity is 3.0 to 4.5, and a difference of a C log P of the repeating unit (a-2) before and after changing the polarity is 2.5 to 3.2. This provides a resist composition which has high sensitivity, wide DOF and high resolution, reduces LER, LWR and CDU, and has good pattern shape after exposure and excellent etching resistance. 

A positive resist composition is provided comprising two onium salts, a base polymer comprising acid labile group-containing recurring units, and an organic solvent. The positive resist composition forms a pattern having PED stability and improved properties including DOF, LWR, and controlled footing profile.

Positive resist composition and patterning process

A chemically-amplified negative resist composition includes: (A) a quencher containing an onium salt shown by the following formula (A-1); (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2); and (C) a photo-acid generator which generates an acid. Thus, the present invention provides: a negative resist composition which can form a favorable profile with high sensitivity and low LWR and CDU in a pattern; and a resist patterning process using the composition. 

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process

A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

Multifunctional polymers

A negative resist composition comprising an onium salt of arenesulfonic acid having a bridged ring-containing group and a base polymer is provided, the onium salt being capable of generating a bulky acid having an appropriate strength and controlled diffusion. When the resist composition is processed by lithography, a dot pattern of rectangular profile having high resolution and reduced LER is formed.

The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition. 

Resist composition and resist patterning process

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Joetsu, Japan

Satoshi Watanabe