Alps Electric Co., Ltd.

Alps Alpine Co., Ltd.

Satoshi Waga

Kyosuke Ozaki

Haruhiko Fujimoto

Takeshi Ikeda

Keisuke Nakayama

Takashi Sato

Takuo Kudo

Shinji Kikuchi

Sumihito Morita

Hideki Kamimura

Masaya Yamatani

Kazuaki Kaneko

Toshihiro Meguro

Yutaka Matsuo

Makoto Sasaki

Yasuo Hayakawa

Junichi Hosogoe

Kazuhiko Suzuki

Kiyoshi Sasai

Shinya Yokoyama

Motoki Hirayama

Atsushi Tondokoro

Masaru Sakurai

Shiro Ikeda

Kazunari Takida

Ryosuke Suzuki

Yuji Kodama

Hisanao Takahara

Yoshinobu Kakihara

Yoshihiro Sudoh

Kenji Shimizu

Mitsuo Bitoh

Fixed conductive plates are buried in a case. In its internal space, a first contact surface, which is part of each fixed conductive plate, and a second contact surface, which is an inner surface of the case, are opposite to each other, and an elastic conductive plate is interposed in this opposing portion. The elastic conductive plate is structured so that, in a restricting portion, a support piece portion is fitted to the thin plate portion of the fixed conductive plate and that an elastic arm portion extends from the support piece portion.

Electronic device having fixed conductive plates and elastic conductive plates

Fixed conductive plates are buried in a case. In its internal space, a first contact surface, which is part of each fixed conductive plate, and a second contact surface, which is an inner surface of the case, are opposite to each other, and an elastic conductive plate is interposed in this opposing portion. The support piece portion of the elastic conductive plate, is constrained from above by a restricting support portion and from below by a restricting opposing portion at a position close to a boundary portion with an elastic arm portion.

A first main body portion and a second main body portion of an electronic package are mounted on a mount portion of a support body, first metal projections are caused to enter first receiving recesses, and second metal projections are caused to enter second receiving recesses. When a clip member is mounted in the a first direction, the first metal projections are pressed by first pressing portions of the clip member, the second metal projections are pressed by second pressing portions of the clip member, and an elastic piece is pressed against a rear side of the support body. Thus, the electronic package is secured.

Electronic device and method of producing the same

A humidity detection sensor includes a lower electrode provided on a board, an upper electrode provided so as to face the lower electrode, a humidity sensing film which is formed at least between the lower electrode and the upper electrode and whose dielectric constant changes in response to humidity, and a protective film provided so as to cover the upper electrode. Each of the upper electrode and the protective film has an opening through which the humidity sensing film is partially exposed to the outside. In the opening, the humidity sensing film is provided so as to reach at least a position higher than the position of the lower surface of the protective film.

Humidity detection sensor and a method for manufacturing the same

A capacitive type humidity sensor is provided, where a sensor chip substrate, with a sensor section where electrostatic capacitance changes in accordance with humidity, a reference section where electrostatic capacitance does not change, and a plurality of pads which are output terminals of each section, and an IC substrate, which is electrically connected to the pads and which outputs the difference in capacitance between the sections as a voltage, are fixed to the same support substrate, where a protective member, which forms a sealed region surrounding the sensor section and which covers the reference section, is provided on the sensor chip substrate, the support substrate is covered by a sealing resin except for the region which is covered by the protective member, the sensor section is exposed to air at the region which is surrounded by the protective member, and the other constituent elements are covered by the sealing resin.

Capacitive type humidity sensor and manufacturing method thereof

Photo detector

First base layers made of TiN or TiON(where, 0&#x3c;x&#x3c;0.2, x+y=1) and second base layers made of Cr are provided between interdigital transducer portions and a piezoelectric substrate, and accordingly, it is possible to prevent voids from being generated in the interdigital transducer portions, which improves a power resistance of the surface acoustic wave device. In addition, since it is possible to prevent the voids from being generated in the interdigital transducer portions, it is possible to suppress the resistance of the interdigital transducer portions from increasing, which can reduce the loss of power. In addition, it is also possible to reduce the variations in a serial resonance frequency and a parallel resonance frequency.

Surface acoustic wave device and method of manufacturing the same

A surface acoustic wave element having power resistance is provided. In the surface acoustic wave element, upper dispersion preventing layers and side dispersion preventing layers each made of metal nitride are provided between interdigital transducer electrode portions and an insulating layer. Further, lower dispersion preventing layers made of metal nitride are provided between the interdigital transducer electrode portions and a piezoelectric substrate. If dispersion preventing layers made of 'metal nitride' are provided between the interdigital transducer electrode portions and the insulating layer, even though the insulating layer is formed, it is possible to prevent voids from being generated in the interdigital transducer electrode portions, unlike a related art. Therefore, the power resistance can be improved.

Surface acoustic wave element and method of manufacturing the same

In an SAW filter on one side of a piezoelectric substrate are formed a pattern portion constituted by a conductor and provided on the outer circumferential portion of the surface acoustic wave device, and a conductor removing portion formed between the surface acoustic wave device and the pattern portion. The shape of the surface acoustic wave device is formed by the conductor removing portion and the surface acoustic wave device remains non-conductive with the pattern by the conductor removing portion.

SAW filter and method of manufacturing the same

A method of manufacturing a surface acoustic wave device includes interposing a thermosetting adhesive between the insulator that is inserted in the housing portion while the comb-shaped electrodes are directed upward and a bottom portion of the housing portion, and curing the adhesive by heating in a state in which a conductive member is disposed near the opening portion to come in contact with the comb-shaped electrodes, such that the conductive member is separated from the comb-shaped electrodes. Accordingly, a process of forming a conductive film made of carbon and a process of removing the conductive film are not required. Therefore, it is possible to provide a method of manufacturing a surface acoustic wave device that has high productivity and that prevents pyroelectric breakdown between the comb-shaped electrodes at low cost.

Method of manufacturing surface acoustic wave device

There is provided a surface acoustic wave device which can prevent a breakage of electrodes and electrical breaks, decrease an insertion loss of elements, and enhance a Q-factor of resonators. Interdigital electrode sections and each have a laminated structure of a base layer made of TiN (titanium nitride) or TiONand a main electrode layer deposited to come in contact with an upper surface of the base layer. The main electrode layer is deposited such that a {111} plane as a closest-packed plane of the main electrode layer has a constant gradient with respect to a surface of a substrate, and thus electromigration or stress migration can be suppressed in the interdigital electrode sections.

Surface acoustic wave device

A surface acoustic wave device includes a piezoelectric substrate and an electrode section, disposed on the piezoelectric substrate, having a thin-film structure. The electrode section includes interdigital electrodes and junction electrodes connected to the interdigital electrodes. The interdigital electrodes each include corresponding first base layers containing Ta and Cu layers or Cu&#x2014;M alloy layers each disposed on the corresponding first base layers, wherein M represents one or more elements selected from the group consisting of Ag, Sn, and C.

Surface acoustic wave device having high dielectric strength and process for manufacturing the same

IDT electrodes are formed by a Cu alloy. When the wavelength of a SAW propagating in the direction of the X axis of a piezoelectric substrate is indicated by &#x3bb;, and when the thickness of the IDT electrodes is indicated by H, the standardized thickness H/&#x3bb; of the IDT electrodes ranges from 0.045 to 0.070, and the piezoelectric substrate is a rotated Y-cut LiTaOsubstrate whose rotational cut angle &#x3b8; from the Y axis to the Z axis around the X axis ranges from 52.0&#xb0; to 58.0&#xb0;. With this arrangement, the reflection coefficient S11 becomes 0.88 or higher.

Surface acoustic wave device suitable for use in GHz band

A thin film device comprising a substrate which is magnetic and has insulation property at least on the surface, coils formed spirally in a planar configuration on the substrate, a first interlayer insulation film formed to a portion excepting for the terminal portion of the coils and a magnetic material connection portion of the substrate, a magnetic film and a second interlayer insulation film formed successively on the first interlayer insulation film excepting for the terminal portions, and bump electrodes formed in connection with the terminal portions in which a crystallite material having a composition: Fe.sub.78 Ta.sub.10 C.sub.12 is used as the magnetic film. The thin film device can be formed an a reduced size and having a large inductance value. When the device is used as a noise filter, a cut-off frequency range can be lowered.

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Fukushima-ken, Japan

Satoshi Waga