Idemitsu Kosan Company, Limited

Satoshi Umeno

Kazuyoshi Inoue

Nobuo Tanaka

Akira Kaijo

Koki Yano

Katsunori Honda

Tokie Tanaka, Legal Representative

Masato Matsubara

A multilayer structure including a transparent conductive thin film and a molybdenum metal thin film, the transparent conductive thin film having a thickness of 35 nm or less.

Multilayer structure, and electrode for electrical circuit using the same

A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of ZnSnOand a bixbyite structure compound of InO. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).

Sputtering target, transparent conductive film and transparent electrode

A multilayer structure including a transparent conductive thin film and a molybdenum metal thin film wherein difference of internal stress between the transparent conductive thin film and the molybdenum metal thin film is 1600 MPa or less.

Multilayer structure, electrode for electrical circuit using the same, and method for producing the same

A transparent conductive film including an indium oxide, a tin oxide and at least one lanthanoid metal oxide, the film including a portion connected to a conductor, and at least the connection portion having crystallinity.

Growing community of inventors

Sodegaura, Japan

Satoshi Umeno