Murata Manufacturing Co., Ltd.

Satoshi Ueno

Akinori Nakayama

Hideaki Niimi

Terunobu Ishikawa

Yoichi Kawase

Mitsutoshi Kawamoto

Ryouichi Urahara

A semiconductor ceramic device includes a semiconductor ceramic sintered body and external electrodes. The semiconductor ceramic sintered body contains a lanthanum cobalt type oxide major component, about 0.1 to 10 mol % on an element conversion basis of an oxide of Cr as a sub-component, and about 0.001 to 0.5 mol % on an element conversion basis of at least one of the oxides of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn.

Lanthanum cobalt oxide semiconductor ceramic and related devices

The present invention provides a barium titanate-based semiconducting ceramic which exhibits excellent PTC characteristic and which can be fired at a temperature lower than 1000.degree. C. The present invention also provides an electronic element fabricated from the ceramic. The semiconducting ceramic contains, in a semiconducting sintered barium titanate; boron oxide; an oxide of at least one of barium, strontium, calcium, lead, yttrium and a rare earth element; and an optional oxide of at least one of titanium, tin, zirconium, niobium, tungsten and antimony in which the atomic boron is

Semiconductor ceramic and electronic element fabricated from the same

A semiconducting ceramic contains a lanthanum cobalt oxide as a major component represented by La.sub.x CoO.sub.3 wherein 0.600.ltoreq.x.ltoreq.0.999. The average crystal grain size of cobalt oxide present in the major component is not more than about 20 .mu.m. A change in resistivity between the semiconducting ceramic products can be suppressed.

Semiconducting ceramic, semiconducting ceramic element, and method for

A semiconductive ceramic in which the B constant is maintained at about 4000 K or more at elevated temperature to thereby decrease power consumption, and the B constant is lowered less than 4000 K at low temperature so as to avoid unnecessary increase of resistance; as well as a semiconductive ceramic element using the same. The semiconductive ceramic is formed of a lanthanum cobalt oxide, which serves as the primary component, and, as a secondary component, at least one oxide of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn. The semiconductive ceramic element is fabricated through use of the semiconductive ceramic and an electrode formed thereon.

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Shiga-ken, Japan

Satoshi Ueno