Toshiba Memory Corporation

Kioxia Corporation

Kabushiki Kaisha Toshiba

Satoshi Tsukiyama

Hideo Aoki

Kazushige Kawasaki

Masaru Koyanagi

Yoichiro Kurita

Mikihiko Ito

Masatoshi Fukuda

Akira Umezawa

Masahiro Yoshihara

Shinya Okuno

Shigeki Nagasaka

Naoyuki Komuta

Hideko Mukaida

Hiroshi Watabe

Masafumi Nakatani

Keita Mizoguchi

Hirokazu Ezawa

Masayuki Miura

Yoshiaki Goto

Soichi Homma

Satoru Takaku

Motoshi Seto

Yukifumi Oyama

Shinya Fukayama

Yuki Sugo

Ayana Amano

Hiroshi Oota

Masatoshi Kawato

Tsukasa Konno

Tomoyasu Yamada

Yuki Takahashi

A semiconductor device according to an embodiment includes a substrate and a semiconductor chip. The semiconductor chip is provided over the substrate. The substrate includes a wire layer and an insulating layer. The wire layer includes a wire electrically connected to the semiconductor chip. The insulating layer is provided in contact with the wire layer and includes a glass woven fabric containing a resin. The glass woven fabric includes a plurality of glass fibers that are provided along two or more directions parallel with the glass woven fabric and are woven. The glass fibers differ in at least one of the material, number, and thickness depending on the directions parallel with the glass woven fabric.

Semiconductor device and substrate

A semiconductor device according to the present embodiment includes a substrate and a semiconductor chip. The substrate has a first face and a plurality of conductive connection parts provided on the first face. The semiconductor chip has a second face that faces the first face and a plurality of connection bumps provided on the second face and electrically connected to the plurality of conductive connection parts. The conductive connection part arranged in a chip outer peripheral region of a chip region on the first face where the semiconductor chip is arranged is different in thickness from the conductive connection part arranged in a chip central region of the chip region.

Semiconductor device and manufacturing method thereof

A method for manufacturing a semiconductor device of an embodiment, comprises a step of mounting a first semiconductor element on a board and a step of accommodating a member in which a plate-shaped member and a first adhesive layer are stacked in a collet and pressure-bonding the heated first adhesive layer on the board on which the first semiconductor element is mounted. The collet has a member having the first Young's modulus and a second member having a second Young's modulus which is lower than the first Young's modulus on a surface that accommodates the member in which the plate-shaped member and the first adhesive layer are stacked.

Method for manufacturing semiconductor device

A semiconductor device includes a substrate, a first adhesive layer, a first semiconductor chip, and a second adhesive layer. The first adhesive layer is provided above a first surface of the substrate and includes a plurality of types of resins having different molecular weights and a filler. The first semiconductor chip is provided above the first adhesive layer. The second adhesive layer is provided in at least a part of a first region between the substrate and the first adhesive layer, and the second adhesive layer includes at least one type of resins among the plurality of types of resins having a molecular weight smaller than a molecular weight of other types of resins among the plurality of types of resins, and a filler having a lower concentration than that of the first adhesive layer.

Semiconductor device and method of manufacturing the same

According to one embodiment, a memory device includes: a first chip including a first circuit, first and second terminals; a second chip including a second circuit and a third terminal; and an interface chip including first and second voltage generators. The first chip is between the second chip and the interface chip. The first terminal is connected between the first circuit and the first voltage generator. A third end of the second terminal is connected to the third terminal and a fourth end of the second terminal is connected to the second voltage generator. A fifth end of the third terminal is connected to the second circuit and a sixth end of the third terminal is connected to the second voltage generator via the second terminal. The third end overlaps with the sixth end, without overlapping with the fourth end.

Memory device

A semiconductor device includes a first semiconductor chip, a second semiconductor chip thicker than the first semiconductor chip, a plurality of bumps provided between the first and second semiconductor chips and electrically connecting the first and second semiconductor chips, an adhesive resin provided between the first and second semiconductor chips and bonding the first and second semiconductor chips, and a sealing resin encapsulating the first and second semiconductor chips. At least one of the first and second semiconductor chips has an organic protective film disposed thereon.

Semiconductor device including multiple chips

According to one embodiment, a semiconductor device includes a wiring board, a controller chip that is provided on the wiring board and is sealed with a first resin composition, a nonvolatile memory chip that is provided on the first resin composition and is sealed with a second resin composition, a second bonding wire that connects a pad for electric power supply wiring of the controller chip to the wiring board and is sealed with the first resin composition, and a first bonding wire that connects a pad for signal wiring of the controller chip to the wiring board, is sealed with the first resin composition, and has a higher Pd content than that of the second bonding wire.

Semiconductor device

A semiconductor device includes a base member and semiconductor chips stacked on the base member. The semiconductor chips include a first semiconductor chip and a second semiconductor chip adjacent to the first semiconductor chip. The first semiconductor chip includes a semiconductor substrate, a functional layer and through electrodes. The through electrodes extend from the back surface to the front surface of the semiconductor substrate, and are electrically connected to the functional layer on the front surface. The second semiconductor chip is electrically connected to the first semiconductor chip through connection members connected to the through electrodes. The functional layer includes first and second contact pads. The second contact pad is positioned at a level between the semiconductor substrate and the first contact pad. The through electrodes include a first through electrode connected to the first contact pad and a second through electrode connected to the second contact pad.

According to one embodiment, a semiconductor device includes a device region covered with a resin film and a dicing region extending along at least one side of the device region, the dicing region including at least a first lithography mark and a second lithography mark. The resin film includes a first dicing region portion which covers a portion of the dicing region between the first lithography mark and the second lithography mark.

Semiconductor device having lithography marks and resin portions in a cutting region

According to one embodiment, a semiconductor device of an embodiment includes a substrate, a metal plate having a main portion having a first width in a first direction and a second width in a second direction orthogonal to the first direction, a first semiconductor chip located between the metal plate and the substrate, the first semiconductor chip having a third width in the first direction and a fourth width in the second direction, and a second semiconductor chip located between the first semiconductor chip and the substrate, wherein the first width is smaller than the third width, and the second width is smaller than the fourth width.

Semiconductor device package having a mounting plate with protrusions exposed from a resin material

A semiconductor device includes a base member, a stacked body on the base member, a first conductor on the stacked body, a second conductor on a top surface of the base member, and a connection conductor connecting the first conductor and the second conductor. The stacked body includes semiconductor chips stacked and a shared terminal connected to the plurality of semiconductor chips. The plurality of semiconductor chips each includes a functional element on a front surface side thereof and a through electrode extending from a back surface to the front surface side. The shared terminal has a top end positioned at a top surface of the stacked body and a bottom end positioned at a bottom surface of the stacked body. The first conductor is connected to the top end of the shared terminal, and the second conductor is electrically connected to the bottom end of the shared terminal.

A semiconductor device according to an embodiment includes a first memory chip having a first front surface and a first back surface and having a first memory circuit provided on the first front surface side; a second memory chip having a second front surface and a second back surface facing the first front surface, having a second memory circuit provided on the second front surface side, and being electrically connected to the first memory chip; and a logic chip having the first memory chip provided between the logic chip and the second memory chip, having a third front surface and a third back surface, having a logic circuit provided on the third front surface side, and being electrically connected to the first memory chip.

Semiconductor device having stacked logic and memory chips

A semiconductor device includes a first semiconductor chip including an inorganic protective film, a second semiconductor chip including an organic protective film and a re-wiring layer, the second semiconductor chip being electrically connected to the first semiconductor chip through a through-silicon via and a bump connection, a third semiconductor chip including an inorganic protective film, the third semiconductor chip being electrically connected to the second semiconductor chip through the re-wiring layer and a bump connection, a first resin layer filled between the first semiconductor chip and the second semiconductor chip, the first resin layer being in contact with the inorganic protective film, and a second resin layer filled between the second semiconductor chip and the third semiconductor chip, the second resin layer being in contact with the organic protective film and the inorganic protective film.

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Yokohama, Japan

Satoshi Tsukiyama