International Business Machines Corporation

Satoshi Tsuji

Hiroshi Takatsuji

Hiroshi Yamashita

Hiroaki Kitahara

Yasuhiro Kimura

Yoshihiro Katsu

Osaaki Watanuki

Yoshihiro Ikeda

Katsuhiro Tsujimoto

In each pixel region of a liquid crystal TFT array substrate, formed are an ITO transparent electrode , a gate line , a data line , a TFT active device , an identification mark and the like. The identification mark is provided by forming a bar code made of silver on the gate line . Since the identification mark is formed within the pixel region , a transistor to be repaired can be surely identified, for example, by detecting the identification mark in a repair processing of the TFT array substrate. Furthermore, in an information processing apparatus for inputting figures and characters onto a screen using a laser pen, a locus of the laser pen can be accurately specified by specifying a position of a pixel region from an identification mark detected by the laser pen, and the figures and the characters input can be recognized minutely.

Liquid crystal panel, display device, identification mark detection device, detection display system, TFT array repair device and identification mark detection method

A multilayered wiring layer having high thermal stability, high stress migration resistance and low electrical resistance. The wiring layer includes at least two layers formed on a substrate wherein each layer has substantially the same component and wherein the relationship between grain size and thickness of each of the at least two layers is 0.5<d/h<2, wherein d is the grain size of each layer and h is the thickness of each layer.

Multilayered wiring layer

The present invention is directed to a wiring layer which has high thermal stability and a better stress migration resistance characteristic as an electrode wiring material that is used in a liquid crystal display and where there is no defect such as a hillock and the like and the electric resistance is considerably low. More specifically, the present invention is directed to a wiring layer which comprises at least two layers formed on a substrate. The two layers include: a first layer which has substantially aluminum for its main component and a second layer formed on the first layer which has substantially the same component as the first layer. Also, the second layer is higher in electric resistance than the first layer and has an amorphous phase for its main phase. The second layer may also include microcrystals which have a crystal particle diameter D.sub.2 smaller than a crystal particle diameter D.sub.1 of the first layer.

Wiring layer and method of forming the wiring layer

This invention provides a high switching rate tip for a high density recording system using scanning probe microscope (SPM). This new tip improves the switching rate in a data writing operation. This tip is constituted with a non-magnetic material core and a thin film coat of high permeable magnetic material. The diameter of the tip is on the order of 100 nm and the thickness of the high permeable magnetic coat is approximately 1000-2000 angstroms. The core is made of non magnetic material such as W, Pt, Ir, PtIr and Au. The magnetic coat is, for example, NiFe, CoZrNb, CoFeSiB. Further, this invention adopts a flat coil formed on a medium by lithography. The coil is used to switch the magnetization of the tip. This flat coil improves the process of the fabrication of a SXM recording device.

Growing community of inventors

Hadano, Japan

Satoshi Tsuji