Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hitachi High-tech Science Corporation

Hitachi Ulsi Systems Co., Ltd.

Other

Satoshi Tomimatsu

Kaoru Umemura

Hiroyasu Shichi

Muneyuki Fukuda

Hidemi Koike

Yoshimi Kawanami

Hideo Kashima

Mitsuo Tokuda

Yuichi Madokoro

Yasunori Doi

Tohru Ishitani

Yasuhiro Mitsui

Makoto Sato

Isamu Sekihara

Tatsuya Asahata

Noriyuki Kaneoka

Koji Ishiguro

Eiichi Seya

Masato Suzuki

Aritoshi Sugimoto

Tsuyoshi Onishi

Junzo Azuma

Terutaka Nanri

Takashi Ohshima

Atsushi Uemoto

Shinya Kitayama

Yoshinori Nakayama

Akira Shimase

Tomihiro Hashizume

Shinichi Matsubara

Masaki Hasegawa

Yo Yamamoto

Yuichi Hamamura

Miyuki Takahashi

Mitsugu Sato

Hisashi Takano

Hiroki Kawada

Toshihide Agemura

Wataru Suzuki

Yasuhira Nagakubo

Hideo Sakai

Ikuko Nakatani

Isao Ochiai

Yuuichi Madokoro

Miki Tsuchiya

Megumi Aizawa

Tsuyoshi Oonishi

Osamu Watanabe

Kunio Sakamoto

Provided are a thin film sample creation method and a charged particle beam apparatus capable of preventing a thin film sample piece from being damaged. The method includes a process of processing a sample by irradiating a surface of the sample with a focused ion beam (FIB) from a second direction that crosses a normal line to the surface of the sample to create a thin film sample piece and a connection portion positioned at and connected to one side of the thin film sample piece, a process of rotating the sample around the normal line, a process of connecting the thin film sample piece to a needle for holding the thin film sample piece, and a process of separating the thin film sample piece from the sample by irradiating the connection portion with a focused ion beam from a third direction that crosses the normal line.

Method of preparing thin film sample piece and charged particle beam apparatus

To automatically repeat an operation of isolating a sample piece, which is formed by processing a sample with an ion beam, and transferring the sample piece to a sample piece holder, a charged particle beam device includes a computer configured to perform control so that, without rotating a needle with which the sample piece is fixed to the sample piece holder, a deposition film deposited on the needle is irradiated with a charged particle beam from a charged particle beam irradiation optical system.

Charged particle beam device

A charged particle beam apparatus automatically prepares a sample piece from a sample. The apparatus includes a charged particle beam irradiation optical system that emits a charged particle beam. A sample stage with a sample placed thereon is movable relative to the charged particle beam irradiation optical system. A sample piece transferring device holds and transports a sample piece separated and extracted from the sample, and a holder fixing base holds a sample piece holder to which the sample piece is to be transferred. An electrical conduction sensor detects electrical conduction between the sample piece transferring device and an object, and a computer sets a time management mode when electrical conduction between the sample piece transferring device and the sample piece is not detected when the sample piece transferring device and the sample piece are connected to each other.

Charged particle beam apparatus

A charged particle beam apparatus which automatically prepares a sample piece from a sample, includes: a charged particle beam irradiation optical system configured to perform irradiation of a charged particle beam; a sample stage configured to move, the sample being placed on the sample stage; a sample piece relocation unit configured to hold and transport the sample piece which is separated and picked up from the sample; a holder fixing stage which holds a sample piece holder to which the sample piece is relocated; and a computer which performs positional control in relation to a target object based on a template and positional information which is obtained from an image of the target object, the template being generated based on an absorption current image of the target object which is acquired using the irradiation of the charged particle beam.

(Task) To repeatedly perform an operation of extracting a sample piece formed by processing a sample with an ion beam and of transferring the extracted sample piece to a sample piece holder. (Problem Solving Means) A charged particle beam apparatus includes a computer that sets a shaping processing region including a bottom portion of sample piece in a thickness direction of the sample piece corresponding to a depth direction at the time of processing a sample after a needle holds the sample piece, and controls a focused ion beam irradiation optical system to irradiate the shaping processing region with a focused ion beam to thereby shape the sample piece.

A charged particle beam includes: a computer that controls a needle actuating mechanism so as to approach a needle to a sample piece using a template formed from an absorbed current image obtained by irradiating the needle with a charged particle beam and a tip coordinate of the needle acquired from a secondary electron image obtained by irradiating the needle with the charged particle beam.

Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit () which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit () which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector () which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

Charged particle beam device and sample production method

There is provided a control device for controlling a charged particle beam apparatus, wherein the beam apparatus comprises a workpiece stage having at least two turning axes which are not parallel to each other and an irradiation unit, and the control device comprises an angle calculation unit that based on a direction of a first processing in which a processed surface having a normal line not parallel to any of the turning axes is generated in the workpiece by the irradiation unit and a direction of a second processing to be processed by the irradiation unit from a direction different from the direction of the first processing with respect to the processed surface to be generated by the first processing, calculates turning angles about the turning axes that changes the direction of the stage from the direction of the first processing to the direction of the second processing.

Control device, charged particle beam apparatus, program and method for producing processed product

A charged particle beam apparatus automatically prepares a sample piece from a sample and includes a charged particle beam irradiation optical system that irradiates a charged particle beam to a sample placed on a movable sample stage. A sample piece transferring unit holds and transfers a sample piece separated and extracted from the sample, and a holder support holds a sample piece holder to which the sample piece is transferred. A computer controls a position of an object based on a template prepared from an image of the object acquired by irradition with the charged particle beam and position information acquired from the image of the object. The sample piece transferring unit includes a needle that transfers the sample piece separated and extrated from the sample, and a needle actuting mechanism that actuates the needle. The computer controls the needle actuating mechanism so as to approach the needle to the sample piece using the template formed from an absorbed current image acquired by irradiating the needle with the charged particle beam.

The present invention enables a sample to be observed in a clean state directly after preparation of a final observation surface when preparing a sample for observing a material that is sensitive to heat. The present invention is a method of preparing a sample using a charged particle beam device including a microprobe having a cooling mechanism, a first sample holder having a mechanism for retaining a sample in a cooled state, and a stage into which the microprobe and the first sample holder can be introduced, the method including cutting a bulk-shaped sample piece from the sample on the first sample holder retained in a cooled state; adhering the sample piece to a distal end of the microprobe that is cooled to a fixed temperature and transferring the sample piece to a second sample holder for thin film observation retained in a cooled state, which is different from the first sample holder, within a vacuum chamber of the charged particle beam device; separating the sample piece that has been transferred to the second sample holder from the microprobe and thin film processing the sample piece to a thickness that is less than the thickness during cutting; and observing the sample piece after the thin film processing.

Charged particle radiation device and specimen preparation method using said device

Provided is a charged particle beam device with high sensitivity, capable of detecting charged particles emitted from a sample at high resolution. An absorption current detector arranged to contact with the sample makes an absorption current generated in the sample by an irradiated charged particle beam flow through the detector, thereby to detect the current. The charged particle beam scans the sample and the charged particle beam device acquires an absorption current image. In case the absorption current detector is arranged separated from the sample, the absorption current detector detects the incident charged particle beam as a signal current dependent on an angle &#x3b8; formed in a direction from the irradiation position on the sample toward the absorption current detector relative to at least one of the normal line direction of the front surface of the sample and the incident direction of the charged particle beam.

There is provided an apparatus and a method capable of preparing a standardized probe without need for working skill of probe processing. According to the present invention, a probe shape generation process of detecting a probe shape based on the probe incoming current detected by a probe current detection unit, a probe tip coordinate extraction process of detecting a tip position of the probe from the probe shape, a probe contour line extraction process of generating a probe contour line obtained by approximating a contour of the probe from the tip position of the probe and the probe shape, a probe center line extraction process of generating a center line and a vertical line of the probe from the probe contour line, a processing pattern generation process of generating a processing pattern based on the probe tip position, the probe center line, the probe vertical line, and a preset shape and dimension of a probe acute part, and an ion beam termination process of performing, based on the processing pattern, termination of ion-beam processing are performed.

Apparatus and method for probe shape processing by ion beam

Provided are a device and method capable of machining a machining target such as a sample, a probe, or a sample table without requiring a high degree of device operation skill. First, a shape generation process of determining a shape of a machining target on the basis of an ion beam scanning signal and an absorption current of the machining target is performed. Next, a machining pattern positioning process of positioning a machining pattern over an image of the machining target is performed. Further, an ion beam stopping process of stopping ion beam irradiation is performed from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation.

Ion beam device and machining method

Provided is a technique to perform FIB milling, in spite of its sample dependency, effectively into a desired shape without influences of individual differences among operators. A charged particle beam device includes an ion beam optical system device configured to irradiate a sample with an ion beam generated at an ion source; a controller thereof; an element detector configured to detect elements constituting the sample; a controller thereof; and a central processor configured to automatically set conditions for the sample based on the element specified by the element detector.

Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.

Charged particle beam device, position specification method used for charged particle beam device, and program

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Kokubunji, Japan

Satoshi Tomimatsu