Shimadzu Corporation

Institute of National Colleges of Technology, Japan

Other

Sharp Kabushiki Kaisha Corporation

Tohoku-microtec Co., Ltd.

Satoshi Tokuda

Toshinori Yoshimuta

Koichi Tanabe

Yukihisa Wada

Toshiyuki Sato

Hiroyuki Kishihara

Satoshi Sano

Akira Horiba

Kenji Sato

Naoki Morimoto

Masatomo Kaino

Yoshihiro Izumi

Osamu Teranuma

Takahiro Doki

Susumu Adachi

Tetsuya Yoneda

Akina Yoshimatsu

Tamotsu Okamoto

Shoji Kuwabara

Takuro Izumi

Tokihiko Shinomiya

Taro Shirai

Kenji Kimura

Makoto Motoyoshi

Shinya Hirasawa

Junichi Suzuki

Hidetoshi Kishimoto

Naoyuki Hori

Nobukazu Hayashi

A dispersive element is provided with a dispersive crystal for spectrally dispersing X-rays, a first support layer supporting the dispersive crystal, and a second support layer supporting the first support layer. The first support layer is greater in a thermal expansion coefficient than the dispersive crystal. The second support layer is smaller in a thermal expansion coefficient than the first support layer and is greater in rigidity than the first support layer.

Dispersive element

A chemical state analysis apparatusincludes: an excitation sourceconfigured to irradiate an irradiation region A of a predetermined surface in a sample S containing a battery material with an excitation rays for generating characteristic X-rays of the battery material; an analyzing crystalof a flat plate arranged so as to face the irradiation region A; a slitarranged between the irradiation region A and the analyzing crystal, the slit being arranged in parallel to the irradiation region A and a predetermined crystal plane of the analyzing crystal; an X-ray linear sensorin which linear detecting elementseach having a length in a direction parallel to the slitare arranged in a direction perpendicular to the slit; a wavelength spectrum generation unitconfigured to generate a wavelength spectrum based on intensity of the characteristic X-rays detected by the X-ray linear sensor; a peak wavelength determination unitconfigured to determine a peak wavelength which is a wavelength in a peak of the wavelength spectrum; and a chemical state specification unitconfigured to specify a value for specifying a chemical state of the battery material in the sample S from the peak wavelength determined by the peak wavelength determination unitand a standard curve representing a relation between a value representing the chemical state and the peak wavelength.

Apparatus and method for analyzing chemical state of battery material

The X-ray imaging device () is provided with an X-ray source (), a plurality of gratings, a moving mechanism (), and an image processing unit (). The image processing unit () is configured to generate a phase-contrast image () by associating a pixel value in each pixel of a subject (T) in a plurality of subject images () with phase values of a Moire fringe () at each pixel and aligning the pixel of the subject of the same position in the plurality of subject images.

X-ray imaging device

In this X-ray phase imaging apparatus, at least one of a plurality of gratings is composed of a plurality of grating portions arranged along a third direction perpendicular to a first direction along which a subject or an imaging system is moved by a moving mechanism and a second direction along which an X-ray source, a detection unit, and a plurality of grating portions are arranged. The plurality of grating portions are arranged such that adjacent grating portions overlap each other when viewed in the first direction.

X-ray phase imaging apparatus

The X-ray imaging device () is provided with an imaging system (CS) including an X-ray source (), a detector (), and a plurality of gratings, a moving mechanism (), a position information acquisition unit (), and an image processing unit () for generating a phase-contrast image () in a tomographic plane by acquiring a phase distribution in a tomographic plane () based on a plurality of X-ray images () and the acquired tomographic position (z+jd).

This X-ray phase imaging system () includes an X-ray source (), a detector (), a first grating group (), a second grating group (), a moving mechanism (), and an image processing unit (). The moving mechanism is configured to relatively move a subject (T) and the imaging system () such that the subject (T) passes through a first grating region (R) and a second grating region (R). The image processing unit is configured to generate a first phase-contrast image () and a second phase-contrast image ().

X-ray phase imaging system

An X-ray phase imaging method includes a step of correcting a gradation that occurred along an orthogonal direction to a translation direction as viewed from an optical axis direction of X-rays in a phase-contrast image based on a distribution state of the gradation.

X-ray phase imaging method

In an X-ray imaging apparatus an image processor is configured to generate a phase contrast image based on a plurality of first images acquired by a first detection region (R) at a plurality of relative positions of the first detection region with respect to a subject (T) to be imaged, and to generate an absorption image based on a plurality of second images acquired by a second detection region (R) at a plurality of relative positions of the second detection region with respect to the subject.

X-ray imaging apparatus

An X-ray spectrometer includes: an excitation source that irradiates a predetermined irradiation region on a surface of a sample with an excitation ray generating a characteristic X-ray; a flat plate analyzing crystal facing the irradiation region; a slit provided between the irradiation region and the analyzing crystal, the slit being parallel to a predetermined crystal plane of the analyzing crystal; a linear sensor including linear detection elements having a length in a direction parallel to the slit are arranged in a direction perpendicular to the slit; and an energy calibration unit that measures two characteristic X-rays in which energy is known by irradiating a surface of a standard sample generating the two characteristic X-rays with the excitation ray from the excitation source, and calibrates the energy of the characteristic X-ray detected by each detection element of the X-ray linear sensor based on the measured energies of the two characteristic X-rays.

X-ray spectrometer and chemical state analysis method using the same

The method of producing this diffraction grating includes a step of generating a moire by a periodic pattern projected onto a plurality of unit diffraction gratings and a plurality of unit diffraction gratings, and a step of adjusting so that the extending directions of the gratings are aligned by relatively rotating at least one of a plurality of unit diffractions with respect to at least one of the others of the plurality of unit diffractions.

Method of producing diffraction grating

In a method for manufacturing a radiation detector, counter pixel electrodesare formed on a counter substrateat positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodesare further formed on the counter pixel electrodes. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes. The bump electrodesare cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes. The decrease in the bonding area also makes it possible to correspondingly improve the reproducibility of forming the diameter of the electrodes, and make reliable connection possible.

Semiconductor device and semiconductor detector, methods for manufacturing same, and semiconductor chip or substrate

In a radiation detector, a Schottky electrode is formed such that an interdiffusion coefficient between the material of an outermost surface electrode formed on the Schottky electrode and the material of the Schottky electrode is smaller than an interdiffusion coefficient between the material of the outermost surface electrode and Al (aluminum). Consequently, the material of the outermost surface electrode does not diffuse into the Schottky electrode, and Schottky functions can be maintained, and at the same time, the material of the Schottky electrode does not diffuse into the outermost surface electrode, and the outermost surface electrode can be prevented from alloying.

Semiconductor detector

A graphite substrate is processed to have surface unevenness in a range of 1 &#x3bc;m to 8 &#x3bc;m. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.

Radiation detector and method of manufacturing the same

A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon.

Method of manufacturing radiation detector

Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.

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Kyoto, Japan

Satoshi Tokuda