Shin-etsu Handotai Co., Ltd.

Satoshi Tobe

Ken Aihara

Norihiro Kobayashi

Ryoji Hoshi

Takao Takenaka

Tsuyoshi Ohtsuki

Yoshinori Hayamizu

Tomosuke Yoshida

Fumio Tahara

Yasushi Mizusawa

Fumitaka Kume

Naohisa Toda

Provided are a thin film silicon wafer having high gettering capability, a manufacturing method therefor, a multi-layered silicon wafer formed by laminating the thin film silicon wafers, and a manufacturing method therefor. The thin film silicon wafer is manufactured by: forming one or more gettering layers immediately below a device layer which is formed in a vicinity of a front surface of a semiconductor silicon wafer; fabricating a device in the device layer of the semiconductor silicon wafer; and after the device has been fabricated, removing part of the semiconductor silicon wafer from a rear surface thereof to immediately below the gettering layers so as to leave at least one of the gettering layers in place. As a result, the thin film silicon wafer is allowed to have gettering capability even after having been reduced in thickness to be in a thin film form.

Thin film silicon wafer and method for manufacturing the same

The present invention provides a method for forming an oxide film on a silicon wafer, comprising: measuring surface roughness of the silicon wafer and/or crystallinity in a surface layer portion of the silicon wafer in advance; adjusting oxidizing conditions for the silicon wafer based on the measurement value; and forming the oxide film on the silicon wafer under the adjusted oxidizing conditions. As a result, there can be provided the method for forming an oxide film by which the oxidizing conditions can be adjusted based on a state of the surface and/or the surface layer of the silicon wafer before forming the oxide film and even an ultrathin oxide film can be thereby accurately formed.

Method for forming oxide film on silicon wafer

A silicon epitaxial layeris grown in vapor phase on a silicon single crystal substratemanufactured by the Czochralski method, and doped with boron so as to adjust the resistivity to 0.02 &#x3a9;&#xb7;cm or below, oxygen precipitation nucleiare formed in the silicon single crystal substrate, by carrying out annealing at 450&#xb0; C. to 750&#xb0; C., in an oxidizing atmosphere, for a duration of time allowing formation of a silicon oxide film only to as thick as 2 nm or below on the silicon epitaxial layeras a result of the annealing, and thus-formed silicon oxide filmis etched as the first cleaning after the low-temperature annealing, using a cleaning solution. By this process, the final residual thickness of the silicon oxide film can be suppressed only to a level equivalent to native oxide film, without relying upon the hydrofluoric acid cleaning.

Method of manufacturing silicon epitaxial wafer

There are provided a heat-treating method capable of suppressing generation of slip in a CZ silicon single crystal wafer having a diameter of mainly 300 mm or more even under high temperature heat treatment to annihilate grown-in defects in the vicinity of a surface of the wafer, and an annealed wafer having a DZ layer in a surface layer of the wafer and oxide precipitates in the bulk thereof at a high density which exert a high gettering effect. First heat treatment of a silicon single crystal wafer manufactured from a silicon single crystal ingot pulled by means of a Czochralski method is performed at a temperature in the range of 600 to 1100&#xb0; C. to form oxide precipitates in the bulk of the wafer, and thereafter, second heat treatment is performed at a temperature in the range of 1150 to 1300&#xb0; C.

Manufacturing process for annealed wafer and annealed wafer

There are provided a heat-treating method capable of both increasing BMD density and widening DZ layer width, and a silicon wafer having DZ layer width wider compared with a conventional one regardless of high BMD density. In the method, heat treatment (RTA treatment) is performed to a silicon wafer containing interstitial oxygen with a rapid heating-rapid cooling apparatus, thereby atomic vacancies being injected from a surface of the wafer to form a maximum position of an atomic vacancy concentration in a depth direction in the vicinity of the surface of the wafer, and thereafter heat treatment (post annealing) is performed to move the maximum position of the atomic vacancy concentration in the vicinity of the surface of the wafer into the inside of the wafer.

Method for manufacturing silicon wafer and silicon wafer

The present invention provides an epitaxial wafer wherein a silicon epitaxial layer is formed on a surface of a silicon single crystal wafer in which nitrogen is doped, and a density of oxide precipitates having such a size that a gettering capability can be achieved in a bulk is 10numbers/cmor more. And the present invention also provides a method for producing an epitaxial wafer wherein a silicon single crystal in which nitrogen is doped is pulled by Czochralski method, the silicon single crystal is processed into a wafer to produce a silicon single crystal wafer, and the silicon single crystal wafer is subjected to heat treatment so that a density of oxide precipitates having such a size that a gettering capability can be achieved in a bulk of the wafer may be 10numbers/cmor more, and then the silicon single crystal wafer is subjected to epitaxial growth. A silicon single crystal wafer which surely has a high gettering capability irrespective of a device process can be obtained herewith.

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Annaka, Japan

Satoshi Tobe