Murata Manufacturing Co., Ltd.

Murata Manufacturingco., Ltd.

Sanyo Electric Co., Ltd.

Rohm Co., Ltd.

Glory Ltd.

Sanyo Chemical Industries, Ltd.

Shimizu Construction Co., Ltd.

Satoshi Tanaka

Takayuki Tsutsui

Kazuo Watanabe

Satoshi Arayashiki

Kiichiro Takenaka

Yasuhisa Yamamoto

Taizo Yamawaki

Shun Imai

Hidetoshi Matsumoto

Yuri Honda

Fumio Harima

Satoshi Goto

Kenichi Shimamoto

Yusuke Tanaka

Hirotsugu Mori

Masahiro Ito

Masatoshi Hase

Hayato Nakamura

Isao Obu

Norio Hayashi

Tsuyoshi Sato

Tadashi Matsuoka

Tetsuaki Adachi

Ryuken Mizunuma

Kazuhito Nakai

Masahito Numanami

Yasunari Umemoto

Atsushi Ono

Masao Kondo

Satoshi Sakurai

Hidenori Obiya

Hisanori Namie

Takashi Yamada

Akiko Itabashi

Jun Enomoto

Kazuma Sugiura

Mitsuo Ariie

Makoto Itou

Kenta Kurahashi

Tomohito Ito

Kyoichi Hirayama

Yuuri Honda

Masakazu Hori

Hideki Ueda

Takashi Soga

Masashi Omuro

Kazunari Kawahata

Shigeki Koya

Kaoru Sudo

Fuminori Morisawa

Mitsunori Samata

Yusuke Shimamune

Yukio Sugimura

Akira Toguchi

Toshikazu Terashima

Tetsuro Yabumoto

Atsushi Kurokawa

Yoshio Iizuka

Tatsuya Tsujiguchi

Morio Takeuchi

Takeshi Kogure

Hiroaki Tokuya

Seiji Hashimoto

Jin Yokoyama

Shingo Yanagihara

Yoshiaki Sukemori

Akio Kaneda

Takayuki Kawano

Kiwamu Sakano

Shohei Imai

Hideyuki Satou

Kenji Mukai

Toru Mukai

Toru Yamaji

Takahiro Katamata

Hideyuki Sato

Manabu Yamamoto

Ryoki Shikishima

Hiroki Shonai

Junichi Yoshioka

Chikara Yoshida

Shinya Masuda

Hiroki Yamakami

Yuuma Noguchi

Seima Kondo

Makoto Ito

Yoshiyuki Oothuka

Hiroyuki Furusato

Atushi Ono

A radio-frequency circuit includes a filter and a band elimination filter. The filter has a pass band corresponding to a first sub-band. At least part of the first sub-band is included in a first band used for TDD communication. The band elimination filter is connected to the filter and has a first elimination band which corresponds to a second sub-band included in the first band. The second sub-band is located between a third sub-band and a fourth sub-band. The third and fourth sub-bands are included in the first band. The first sub-band includes the second, third, and fourth sub-bands.

Radio-frequency circuit and communication apparatus

A radio frequency circuit includes a first radio frequency circuit, a second radio frequency circuit, and a first switch circuit. The first switch circuit includes a first terminal connected to an antenna connection terminal, a second terminal connected to the first radio frequency circuit, and a third terminal connected to the second radio frequency circuit. The first radio frequency circuit includes a first power amplifier circuit supporting a first power class, and a first filter circuit connected to the first power amplifier circuit and having a passband that includes a first band. The second radio frequency circuit includes a second power amplifier circuit supporting a second power class having a maximum output power greater than a maximum output power of the first power class. The second radio frequency circuit includes a second filter circuit connected to the second power amplifier circuit and having a passband that includes the first band.

Radio frequency circuit and radio frequency module

A radio-frequency circuit is used in simultaneous transfer of a radio-frequency signal of 4G and a radio-frequency signal of 5G, and includes a first transfer circuit that selectively receives the 4G radio-frequency signal or the 5G radio-frequency signal, and transfers a radio-frequency signal of a first communication band including a first transmission band and a first reception band and a radio-frequency signal of a second communication band including a second transmission band and a second reception band. The first and second transmission bands at least partially overlap. The first transfer circuit includes a first power amplifier that amplifies transmission signals of the first and second communication bands, and a first transmission filter that has a first passband including the first and second transmission bands, and passes the transmission signals of the first and second communication bands output from the first power amplifier.

Radio-frequency circuit and communication device

A power amplifying circuit includes a first amplifier, a second amplifier, a transformer having a primary winding and a secondary winding, and a capacitor. The first amplifier amplifies a signal which is one of differential signals. The second amplifier amplifies a signal which is the other of the differential signals. The primary winding is connected, at its first end, to the first amplifier, and is connected, at its second end, to the second amplifier. The secondary winding is connected, at its first end, to an unbalanced line through which an unbalanced signal is transmitted, and is connected, at its second end, to the ground. The secondary winding is electromagnetically coupled to the primary winding. The capacitor is connected, at its first end, to the midpoint of the primary winding, and is connected, at its second end, to the ground.

Power amplifying circuit

A radio-frequency amplifier circuit includes a first amplifier transistor configured to amplify and output a radio-frequency signal supplied to a base of the first amplifier transistor, a first bias transistor that is connected to the first amplifier transistor to form a current mirror and configured to supply a bias to the base of the first amplifier transistor, a second bias transistor that is connected to the base of the first amplifier transistor to form an emitter follower and configured to supply a bias to the base of the first amplifier transistor, and a first capacitor having a first end connected to the base of the first amplifier transistor and a second end connected to an emitter of the second bias transistor.

Radio-frequency amplifier circuit

A radio-frequency circuit includes a switch and three filters. The switch is connected to an antenna connecting terminal. One filter has a pass band corresponding to a first sub-band and is configured to connect to the antenna connecting terminal via the switch. The first sub-band is included in a first band used for TDD communication. Another filter has a pass band corresponding to a second sub-band included in the first band and is configured to connect to the antenna connecting terminal via the switch. There is a gap between the first sub-band and the second sub-band. The remaining filter has a pass band corresponding to a third sub-band and is configured to connect to the antenna connecting terminal via the switch. The third sub-band includes the first sub-band, the second sub-band, and the gap.

Radio-frequency circuit

An antenna device comprises a substrate including a planar first region and a planar second region; at least one first radiating element, arranged in the first region, that communicates a radio wave of a first frequency; and at least one second radiating element, arranged in the second region, that communicates a radio wave of a second frequency. A separation direction is a direction of a straight line connecting a first geometric center position of the at least one first radiating element and a second geometric center position of the at least one second radiating element, and in a case that the second region is viewed along a normal direction of the second region, an angle formed by the separation direction and a polarization direction of the at least one second radiating element is equal to or greater than 45° and equal to or less than 90°.

Antenna device and communication device

A control circuit is configured to control a Doherty amplifier including a carrier amplifier and a peak amplifier. The control circuit includes a resistor having a resistance value that is irreversibly adjustable. The resistor is configured to determine, based on the resistance value, a bias of the peak amplifier. The control circuit controls a Doherty amplifier.

Control circuit

A power amplifier circuit includes: a high pass filter that has one end into which a high frequency input signal is inputted; a first amplifier that amplifies the high frequency input signal outputted from the other end of the high pass filter and outputs a high frequency signal obtained through the first amplification; a second amplifier that amplifies the high frequency signal and outputs a high frequency output signal obtained through the second amplification; an automatic transformer that performs impedance matching between the first amplifier and the second amplifier; and an impedance circuit, one end of which is electrically connected with the other end of the high pass filter, the other end of which is electrically connected with an output terminal of a bias circuit outputting bias voltage or bias current to the first amplifier, and that outputs the high frequency input signal to the bias circuit.

Power amplifier circuit

A high-frequency signal processing apparatus and a wireless communication apparatus can achieve a decrease in power consumption. For example, when an indicated power level to a high-frequency power amplifier is equal to or greater than a second reference value, envelope tracking is performed by causing a source voltage control circuit to control a high-speed DCDC converter using a detection result of an envelope detecting circuit and causing a bias control circuit to indicate a fixed bias value. The source voltage control circuit and the bias control circuit indicate a source voltage and a bias value decreasing in proportion to a decrease in the indicated power level when the indicated power level is in a range of the second reference value to the first reference value, and indicate a fixed source voltage and a fixed bias value when the indicated power level is less than the first reference value.

High-frequency signal processing apparatus and wireless communication apparatus

A power amplifier circuit includes a first amplifier circuit configured to amplify a first signal of a first frequency band and output a first amplified signal having a first power, a second amplifier circuit configured to amplify a second signal of the first frequency band or a second frequency band different from the first frequency band and output a second amplified signal having a second power different from the first power, and a first variable adjustment circuit disposed between the second amplifier circuit and a first circuit subsequent to the second amplifier circuit, the first variable adjustment circuit being configured to be capable of adjusting a first impedance of the first circuit seen from the second amplifier circuit.

A power amplifier module includes a substrate, an amplifier circuit including a plurality of transistors to be mounted on the substrate and a bump connected to the plurality of transistors, a harmonic termination circuit and an output matching circuit that are disposed in or on the substrate and configured to be electrically connected to the amplifier circuit, a connection pad disposed on the substrate and configured to be connected to the bump, and a plurality of connection wiring lines branching from the connection pad. The plurality of connection wiring lines include at least a first connection wiring line that connects the connection pad and the harmonic termination circuit to each other, a second connection wiring line that connects the connection pad and the output matching circuit to each other, and a third connection wiring line that connects the connection pad and an external power supply to each other.

Power amplifier module

A communication system is configured to use a pulse width modulation signal as transmission code among a plurality of nodes connected to a communication line. A master node includes a transmission transistor connected to the communication line, a detector configured to detect a variation in current during the on-period of the transmission transistor, and a communication circuit configured to determine the off-timing of the transmission transistor based on the timing of occurrence of the variation in current (i.e., the on-timing of a second transmission transistor provided in a slave node). For example, the communication circuit can be configured to determine the off-timing of the transmission transistor such that the simultaneously-on period TB of the transmission transistor and the second transmission transistor fulfills TB=(2n−1)/2f, where f is the frequency of EMI noise.

Communication device and communication system

A transmit/receive module includes plural duplexers, a power amplifier, and a sending transmission line. The plural duplexers operate in bands different from each other and each includes a transmit filter and a receive filter. The power amplifier amplifies signals of pass bands of the plural transmit filters and outputs the amplified signals. The sending transmission line is connected to the plural transmit filters. The signals of the pass bands of the plural transmit filters output from the power amplifier are transmitted through the sending transmission line.

Transmit/receive module

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Kyoto, Japan

Satoshi Tanaka