Fujitsu Semiconductor Limited

Satoshi Takesako

Shinichi Akiyama

Tamotsu Owada

Kazuo Kawamura

Naoki Idani

A semiconductor device manufacture method includes: forming an insulating film above a semiconductor substrate; etching the insulating film to form a dummy groove having a first depth, a wiring groove having a second depth deeper than the first depth, and a via hole to be disposed on a bottom of the wiring groove; depositing a conductive material in the dummy groove, wiring groove and via hole and above the insulating film; and polishing and removing the conductive material above the insulating film.

Semiconductor device manufacture method and semiconductor device

A method of manufacturing a semiconductor device, includes the steps of forming an insulating film on a semiconductor substrate having a silicide layer, forming a hole in the insulating film on the silicide layer, cleaning an inside of the hole and a surface of the silicide layer, forming a titanium layer on a bottom surface and an inner peripheral surface of the hole by a CVD method, forming a copper diffusion preventing barrier metal layer on the titanium layer in the hole, and burying a copper layer in the hole.

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, includes steps of forming an organic insulating film over a semiconductor substrate, irradiating an electron beam to a surface of the organic insulating film, forming recesses in the organic insulating film, forming a conductive material over the organic insulating film and in the recesses, and removing the conductive material on the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film.

Growing community of inventors

Yokohama, Japan

Satoshi Takesako