Asahi Glass Company, Limited

Agc Inc.

Seimi Chemical Co., Ltd.

Elna Co., Ltd.

Satoshi Takemiya

Takeshi Morimoto

Kazuya Hiratsuka

Atsushi Hayashi

Hiroyuki Tomonaga

Iori Yoshida

Eiji Endoh

Keisuke Abe

Yoshinori Kon

Norihito Nakazawa

Keiko Kubota

Takeshi Yoshizuka

The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.

Single-crystal silicon-carbide substrate and polishing solution

A process of manufacturing a single-crystal silicon-carbide substrate, includes contacting a surface of a single-crystal silicon-carbide plate with a surface of a polishing pad; and moving the surface of the single-crystal silicon-carbide plate relative to the surface of the polishing pad while supplying a polishing solution to the surface the polishing pad, to polish the surface of the single-crystal silicon-carbide plate. The polishing pad comprises a non-woven fabric or a porous resin. The polishing solution comprises an oxidizing agent which comprises a transition metal having oxidation-reduction potential of 0.5 V or more. Neither the polishing pad nor the polishing solution comprises an abrasive.

Single crystal silicon-carbide substrate and polishing solution

There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface that is smooth and excellent in surface properties. This polishing method is a method of supplying a polishing liquid to a polishing pad not including abrasive grains to bring a surface to be polished of the non-oxide single-crystal substrate and the polishing pad into contact with each other and polishing the surface to be polished by a relative movement between them, the method characterized in that the polishing liquid comprises: an oxidant whose redox potential is 0.5 V or more and which contains a transition metal; and water, and does not contain abrasive grains.

Polishing method of non-oxide single-crystal substrate

A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20.

Polishing agent and polishing method

A heterocyclic benzene compound such as benzotriazole, is dissolved in at least one substance selected from the group consisting of a primary alcohol having from 1 to 4 carbon atoms, a glycol having from 2 to 4 carbon atoms, an ether represented by the Formula 2 (wherein m is an integer of from 1 to 4), N-methyl-2-pyrrolidone, N,N-dimethylformamide, dimethyl sulfoxide, &#x3b3;-butyrolactone and propylene carbonate, and an aqueous dispersion of fine oxide particles which constitute abrasive grains is mixed therewith, whereby a polishing compound is obtained. By use of this polishing compound in polishing a substrate provided with an insulating filmon which a wiring metal filmand a barrier filmare formed, the formation of an embedded wiringis made possible with low dishing, low erosion and low scratching at a high removal rate.

Polishing compound, method for production thereof, and polishing method

A conductive film consisting essentially of oxides of Ru and In.

Conductive film and low reflection conductive film, and processes for

A solid electrolytic capacitor comprising a dielectric oxide layer and a solid electrolyte layer of a conductive polymer compound formed thereon, wherein said conductive polymer compound is a conductive polymer compound doped with at least one member selected from the group consisting of phosphoric acid, phosphoric acid monoesters, phosphoric acid diesters and salts thereof.

Growing community of inventors

Tokyo, Japan

Satoshi Takemiya