Asahi Kasei Microdevices Corporation

Satoshi Takehara

Toshiro Sakamoto

Yoshiro Yamaha

Makoto Kobayashi

Edson Gomes Camargo

A nonvolatile storage element includes a substrate; a gate region having a charge holding region and an insulator surrounding an entire surface of the charge holding region; a drain region formed in one of both sides of a lower portion of the gate region; and a source region formed in another one of both the sides. A halogen is distributed in the insulator to cover an entire surface of an upper surface of the charge holding region.

Nonvolatile storage element and analog circuit provided with same

There is provided a nonvolatile storage element having excellent charge holding characteristics capable of reducing variations in electric characteristics and an analog circuit provided with the same. A nonvolatile storage element is provided with a charge holding region and an insulator surrounding the entire surface of the charge holding region and having halogen distributed in at least one part of a region surrounding the entire surface.

A small-size reliable gas sensor that can reduce a measurement error can be provided. The gas sensor includes a first light source; a first sensor unit and a second sensor unit disposed to receive light output from the first light source; a first substrate having a first principal surface on which the first light source and the first sensor unit are provided; and a second substrate having a first principal surface on which the second sensor unit is provided. The first sensor unit is disposed at a location where light output from the first light source and reflected on the second principal surface strikes the first principal surface of the first substrate.

Gas sensor

To provide a nonvolatile storage element capable of being formed by an ordinary CMOS process using single layer polysilicon without requiring exclusive forming process and a reference voltage generation circuit with high versatility and high precision. A reference voltage generation circuit includes nonvolatile storage elements formed of single layer polysilicon. The nonvolatile storage elements each include a MOS transistor including a floating gate, a MOS transistor including a floating gate, and a MOS transistor including a floating gate.

Nonvolatile storage element and reference voltage generation circuit

A small-size reliable gas sensor that can reduce a measurement error can be provided. The gas sensor includes: a first light source (); a first sensor unit () and a second sensor unit () disposed to receive light output from the first light source (); a first substrate () having a first principal surface () on which the first light source () and the first sensor unit () are provided; and a second substrate () having a first principal surface () on which the second sensor unit () is provided. The first sensor unit () is disposed at a location where light output from the first light source () and reflected on the second principal surface () strikes the first principal surface () of the first substrate ().

A voltage detector for detecting whether an input voltage is no lower than a predetermined threshold voltage, includes a reference voltage generator configured to generate a reference voltage, and a comparator configured to receive the input voltage and the reference voltage and to detect whether the input voltage is no lower than the threshold voltage that is determined by the reference voltage. Here, the reference voltage generator includes a first write MOS transistor, a second write MOS transistor, a first output MOS transistor and a second output MOS transistor each including a control gate and a floating gate.

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Tokyo, Japan

Satoshi Takehara