Sumitomo Electric Industries, Limited

Sumitomo Wiring Systems, Limited

The Tokyo Electric Power Company, Incorporated

Autonetworks Technologies, Limited

Nippon Hoso' Kyokai

The Kansai Electric Power Co., Inc.

Fukami Patent Office

Sumitomo Electric Company, Limited

The Toyko Electric Power Company, Incorporated

Satoshi Takano

Noriyuki Yoshida

Noriki Hayashi

Kenji Miyazaki

Tsukushi Hara

Shigeru Okuda

Kenichi Takahashi

Takahiko Yamamoto

Kiyoshi Okaniwa

Hajime Hitotsuyanagi

Shinji Inazawa

Kenichi Sato

Kazuo Sawada

Hideo Ishii

Akira Mizoguchi

Jun Shioya

Yoichi Yamaguchi

Ken-ichi Sato

Kousou Fujino

Hiroki Hirai

Masahiro Shibata

Takeshi Hikata

Kensaku Takata

Kazuya Ohmatsu

Hidehito Mukai

Atsushi Kimura

Masahiko Kanda

Nobuhiro Shibuta

Masayuki Nagata

Kouji Ota

Narito Yagi

Yoshikado Hosoda

Maumi Kawashima

Naoji Fujimori

Hideo Itozaki

Shuji Yazu

Takahiro Imai

Saburo Tanaka

Tetsuji Jodai

Nori Inoue

Keizo Harada

Nobuhiko Fujita

Yoshiaki Tanaka

Hitoshi Okumura

Yoshitsugu Tsuji

Masaji Suzuki

Tohru Kashiwagi

Kuniharu Takizawa

Shigeo Ezaki

Hideo Fujikake

Kengo Okura

Yoshitugu Tsuji

Toshiaki Sakai

Tsunehiro Hirabayashi

Mitsuru Itoh

Tadashi Azumakawa

An arc-resistant terminal, couple, and connecter are provided. In an embodiment, a metal-based electrical contact portion thereof includes at least one of Cu, Ni or Sn, and not more than 0.06 mass % P, wherein the arc-resistant terminal capable of suppressing arc discharge wherein a voltage between the arc-resistant terminal and a second terminal immediately after separation thereof is DC36V to 60V and a current between terminals during contact is 6A to 30A. In another embodiment, the an electrical contact portion comprising at least 80 mass % of metal having a boiling point of not less than 1000 degrees centigrade. According to the present invention, since the electrical contact portion or the final contact portion of the terminal includes a specific metal-based material, even when the voltage applied between the terminals is increased and an arc discharge is liable to be generated, the arc discharge can be suppressed. The arc-resistant terminal of the present invention can be suitably used in a connector for an automobile, a joint box provided with the connector portion and the like. This abstract is neither intended to define the invention disclosed in this specification nor intended to limit the scope of the invention in any way.

Arc-resistant terminal, arc-resistant terminal couple and connector or the like for automobile

Provided is a pair of arc discharge suppressive terminals electrically communicable with each other by engagement of the terminal pair. At least one of the terminal pair has a final contact site which is in contact with the counterpart terminal at a final stage of disengagement of the terminal pair. At least the final contact site is covered with an arc discharge suppressive layer containing a first metal having a melting point of 1,550&#xb0; C. or higher. It is preferable that the terminal pair contact with each other at a portion corresponding to a main contact site other than the arc discharge suppressive layer in a completely engaged state where the one of the terminal pair and the counterpart terminal are tightly engaged with each other. Preferably, the main contact site has a surface made of a material having a higher conductivity than the arc discharge suppressive layer. This arrangement effectively suppresses occurrence of arc discharge at a time of disengagement of the terminal pair.

Arc discharge suppressive terminal pair

A method of producing a Bi&mdash;Pb&mdash;Sr&mdash;Ca&mdash;Cu oxide superconductor by thermally treating raw material comprises steps of performing first plastic deformation on the raw material, performing first heat treatment on the material being subjected to the first plastic deformation, performing second plastic deformation on the material being subjected to the first heat treatment, and performing second heat treatment on the material being subjected to the second plastic deformation.

Method of producing oxide superconductor

A method of producing a Bi-Pb-Sr-Ca-Cu oxide superconductor by thermally treating raw material comprises steps of performing first plastic deformation on the raw material, performing first heat treatment on the material being subjected to the first plastic deformation, performing second plastic deformation on the material being subjected to the first heat treatment, and performing second heat treatment on the material being subjected to the second plastic deformation.

Liquid crystal device, driving method thereof, liquid crystal apparatus,

Disclosed herein is an apparatus for manufacturing an oxide superconducting film employing laser ablation method. This apparatus has a thin film forming chamber having a laser-transparent laser entrance window, a target being provided in the thin film forming chamber and containing components of an oxide superconductor, a laser beam source for irradiating the target with a laser beam from the exterior of the thin film forming chamber through the laser entrance window, and apparatus for controlling power of the laser beam which is applied to the target for preventing the power of the laser beam, being applied to the target, from reduction by contamination of the entrance window caused by scattered particles. According to the present invention, it is possible to form an oxide superconducting film having high and uniform characteristics even if a long time is required for film formation, thereby attaining a remarkable effect in improvement of superconductivity of a large area oxide superconducting film.

Oxide superconducting film manufacturing apparatus

A connector assembly with a bad-connection-preventive function is disclosed. It is simple in structure, made up of a small number of parts, and has high long-term reliability. It has a second connector having an integral locking arm and a first connector. Protrusions A and B are formed on side faces of the locking arm and the side faces of the first connector, respectively. A spring is mounted in the first connector. By inserting the second connector into the first connector, the locking arm is pushed upward by the protrusions B, so that its shoulder portion abuts the spring. Thus, the spring is compressed when the second connector is further pushed into the first connector. The connectors are thus urged in a direction away from each other by the spring. The spring disengages when the connectors are completely coupled together. When pulling the second connector out of the first connector, the protrusions A pass under the protrusions B.

Connector assembly

An apparatus for manufacturing an oxide superconducting film employing laser ablation method having a thin film forming chamber having a laser-transparent laser entrance window, a target being provided in the thin film forming chamber and containing components of an oxide superconductor, a laser beam source for irradiating the target with a laser beam from the exterior of the thin film forming chamber through the laser entrance window, and a controller for controlling power of the laser beam which is applied to the target for preventing the power of the laser beam, being applied to the target, from reduction by contamination of the entrance window caused by scattered particles. According to the present invention, it is possible to form an oxide superconducting film having high and uniform characteristics even if a long time is required for film formation, thereby attaining a remarkable effect in improvement of superconductivity of a large area oxide superconducting film.

Disclosed herein is a method of forming a single-crystalline thin film having excellent crystallinity on a base material without depending on the material for and crystallinity of the base material. In this method, a base material is provided thereon with a mask which can prevent chemical species contained in a vapor phase from adhering to the base material. The base material is continuously moved along arrow A, to deliver a portion covered with the mask into the vapor phase for crystal growth. Thus, a thin film is successively deposited on the portion of the base material, which is delivered from under the mask, from the vapor phase. A crystal growth end is formed on a boundary region between a portion of the base material which is covered with the mask and that which is exposed to the vapor phase, so that a crystal having the same orientation as the growth end is grown on a portion of the base material newly exposed by the movement.

Method of forming single-crystalline thin film

An oxide superconductive wire is provided by, for example, forming an oxide superconductive layer on a tape-type flexible base. A preliminary compressive strain is applied to the oxide superconductive layer in the longitudinal direction. The remaining strain can be provided by using a base having thermal expansion coefficient larger than that of the oxide superconductive layer and by cooling the same after heat treatment, due to contraction of the base. Since the preliminary compressive strain is applied to the oxide superconductive layer, degradation of superconductivity of the oxide superconductive layer can be suppressed even if the oxide superconductive wire is bent in any direction, compared with the wire without such strain. Therefore, the oxide superconductive wire can be coiled, for example, without much degrading the superconductivity.

Oxide superconductive wire, method of manufacturing the same and the

In a method of preparing an oxide superconducting thin film having a composition of Y-Ba-Cu-O, for example, using laser ablation, which comprises the steps of applying a laser beam to a target containing components of an oxide superconductive material and depositing particles, being thereby scattered from the target, on a substrate, the oxygen gas flow rate during film deposition is set to be at least 50 SCCM, the oxygen gas pressure during film deposition is set to be 10 to 1000 mTorr, the distance between a target 9 and a substrate 10 is set to be 40 to 100 mm, the temperature of the substrate 10 is set to be 600.degree. to 800.degree. C., the energy density of a laser beam 7 on the surface of the target 9 is set to be at least 1 J/cm.sup.2, and the laser pulse energy is set to be at least 10 mJ.

In-situ laser ablation method for forming oxide superconducting films

In order to enable formation of a smooth and dense oxide superconducting film with no clear appearance of grain boundaries in a fine structure even at a high film forming rate, a laser ablation method is employed to apply a laser beam 2 to a target 1 containing components of an oxide superconductive material and deposit particles, which are thus scattered from the target 1, on a substrate 3, while gaseous oxygen is supplied from a gaseous oxygen inlet 7 toward laser plasma 6, which is generated by the application of the laser beam 2.

Method of and apparatus for preparing oxide superconducting film

An oxide superconducting layer is formed on a base material of silver, whose single side is coated with MgO, or single-crystalline MgO for depositing a Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 phase in a crystallographically oriented state by sputtering, CVD or laser ablation. Metal lead or lead oxide is then laid thereon by sputtering to obtain a two-layer structure, and the two-layer structure is heat treated in the atmospheric air. Thus, a bismuth oxide superconducting film, which is excellent in crystal orientation as well as denseness and thereby having high critical current density, is formed on the base material.

Method of preparing 2223 phase (Bi,Pb)-Sr-Ca-Cu-O superconducting films

In order to enable formation of a smooth and dense oxide superconducting film with no clear appearance of grain boundaries in a fine structure even at a high film forming rate, a laser ablation method is employed to apply a laser beam 2 to a target 1 containing components of an oxide superconductive material and deposit particles, which are thus scattered from the target 1, on a substrate 3, while gaseous oxygen is supplied from a gaseous oxygen inlet 7 toward laser plume 6, which is generated by the application of the laser beam 2, and to a portion of the target irradiated with said laser.

Method of preparing oxide superconducting films by laser ablation

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Osaka, Japan

Satoshi Takano