Ricoh Company, Ltd.

Fujitsu Component Limited

Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Ichikawa Co., Ltd.

Takamisawa Electric Co., Ltd

Nec Corporation

Lenovo Innovations Limited (hong Kong)

Satoshi Takano

Itaru Matsuda

Yuko Harasawa

Hirokazu Ishii

Yuji Arai

Naofumi Ohashi

Hiroshi Saitoh

Takashi Yuba

Shinichi Kawahara

Toshihiro Sugiyama

Hirofumi Saso

Akio Kutsuwada

Hiroshi Ono

Shinya Tanaka

Yuji Suzuki

Hiroshi Itoh

Hiroshi Tanabe

Takeshi Shintani

Satoshi Hatori

Mitsuru Takahashi

Kazunori Bannai

Kaoru Yoshino

Shunji Katoh

Kazuyuki Toyoda

Akira Fujimori

Takashi Bisaiji

Haruji Mizuishi

Hiroshi Fujiwara

Shigeru Yoshiki

Shigemitsu Aoki

Fumihito Itoh

Hiroyuki Nagano

Daiei Iwamoto

Kazuo Kubono

Yasunori Kawaishi

Toshiaki Motohashi

Hideo Yu

Masasumi Yahata

Noriaki Fukube

Eiji Shimojo

Hideki Kamiyama

Ryoh Tanoue

Ying Li

Masakuni Konja

Hideomi Fujimoto

Noboru Onodera

Yuko Hayama

Hiroaki Kohinata

Katsumi Kurihara

Koyuru Kobayashi

Hiroyuki Inobe

Yuji Kitajima

Atsushi Hagiwara

Hidenori Nihei

Masami Tomita

Shinji Aoki

Toshio Koike

Hitoshi Ishibashi

Masumi Sato

Ken Amemiya

Masanori Kawasumi

Takaaki Tawada

Makoto Arai

Tadashi Takasaki

Nobuo Kikuchi

Hideharu Itatani

Shun Matsui

Sadayoshi Horii

Hiroshi Mizusawa

Takashi Yahata

Hideto Tateno

Yukitomo Hirochi

Tsutomu Katoh

Takuzi Yoneda

Shunji Kato

Norimasa Sohmiya

Tokuya Ojimi

Takeshi Yasui

Takeshi Tabuchi

Yuichi Wada

Motonari Takebayashi

Tetsuaki Inada

Yoshinori Kurata

Satoshi Kawasaki

Tomihiro Amano

Mitsuhiro Hirano

Mitsunori Ishisaka

Kazuaki Miyanaga

Mutsumi Namba

Hiroaki Takeuchi

Kosei Yoshino

Hiroyuki Takamura

Yuuji Kitajima

Hideyo Watanabe

Takahiro Nakabayashi

Ichiroh Katsunoi

Shin-ichi Kawahara

Yusuke Uchiyama

Itaru Matsuta

Megumi Otoshi

According to one aspect of the present disclosure, there is provided a technique that includes: a substrate retainer; a reaction tube; a heater configured to heat an inside of the reaction tube; a gas supplier configured to supply a process gas to substrates accommodated in the reaction tube; an exhauster configured to exhaust the process gas from the inside of the reaction tube; a temperature detector configured to measure an inner temperature of the reaction tube; a reflectance detector configured to measure a reflectance of a film formed by supplying the process gas through the gas supplier; and a controller configured to be capable of performing a feedback control of film-forming conditions on the substrates accommodated in the reaction tube by using temperature information measured by the temperature detector and reflectance information measured by the reflectance detector.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

A substrate processing technique includes a substrate mounting table including a substrate mounting surface for a substrate; a process container for accommodating the substrate mounting table and forming a process chamber for processing the substrate mounted on the substrate mounting surface; at least one gas supplier for suppling a processing gas to the process chamber; a first wall arranged on an outer peripheral side of the at least one substrate mounting table; a second wall arranged at an outer side of the first wall on the outer peripheral side of the substrate mounting table; at least one exhaust flow path formed between the first wall and the second wall and configured to discharge a gas in the process chamber; and a shield plate arranged below the substrate mounting table and extending at least to a lower side of a lower end of the second wall.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

An electronic apparatus includes a sub-system that receives, from a wireless LAN module, incoming data including wireless LAN packets according to plural communication methods and a main system including a processor that process the incoming data. The sub-system includes an interface circuit and a sub-processor. The interface circuit acquires a data length of each of the wireless LAN packets from a header of the wireless LAN packet. Based on MAC addresses included in the wireless LAN packet, the interface circuit identifies a communication method of the wireless LAN packet. Based on the data length and the communication method of the wireless LAN packet, the interface circuit transfers the wireless LAN packet to one of different storage areas respectively corresponding to the communication methods. The sub-processor transfers the wireless LAN packet from the one of the different storage areas to the main system.

Electronic apparatus, method for controlling an electronic apparatus, and non-transitory recording medium

Disclosed is a substrate processing apparatus capable of improving the characteristic of a film formed on the surface of a wafer, using a single-wafer type substrate processing apparatus which heats and processes a wafer. The substrate processing apparatus may include: a processing vessel where a substrate is processed; a substrate supporter including: a first heater configured to heat the substrate to a first temperature; and a substrate placing surface where the substrate is placed; a heated gas supply system including a second heater configured to heat an inert gas, wherein the heated gas supply system is configured to supply a heated inert gas into the processing vessel; and a controller configured to control the first heater and the second heater such that a temperature of a front surface of the substrate and a temperature of a back surface of the substrate are in a predetermined range.

Substrate processing apparatus

There is provided a technique that includes: a reactor including a process chamber where substrate is processed, the reactor being fixed to a vacuum transfer chamber; a substrate mounting stand disposed in the reactor and having substrate mounting surface where the substrate is mounted; a heater heating the substrate; a gas supply part supplying gas into the process chamber; an extraction part extracting basic information for estimating position of the substrate mounting surface; a calculation part calculating estimated position information of center of the substrate mounting surface based on the basic information; a transfer robot disposed in the vacuum transfer chamber and including an end effector supporting the substrate when the substrate is transferred; and a controller performing control to set target coordinate of the end effector according to the estimated position information, move the end effector to the target coordinate, and mount the substrate on the substrate mounting surface.

For enhancing productivity, an apparatus comprises a vertical type process furnace configured to simultaneously process N substrates (1&#x3c;N); a loading chamber provided under the vertical type process furnace and configured to transfer the substrate retainer into or out of the vertical type process furnace; a plurality of single-wafer type process furnaces provided adjacent to the loading chamber, each of the plurality of single-wafer type process furnaces being stacked in at least 2 stages and configured to simultaneously process M substrates (M&#x3c;N); and a transfer chamber module provided adjacent to the loading chamber and the plurality of the single-wafer type process furnaces and provided with a transfer device.

Substrate processing apparatus and method of manufacturing semiconductor device

An information processing apparatus includes a first bus interface to receive first data transferred in a pixel-parallel transfer mode, a second bus interface to receive second data transferred in a line-parallel transfer mode, a selector to select one of the first data transferred in the pixel-parallel transfer mode and the second data transferred in the line-parallel transfer mode, as input data, a transfer switching circuit to switch between the line-parallel transfer mode and the pixel-parallel transfer mode to process the input data according to the switched transfer mode.

Information processing apparatus and method of transferring data

A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.

Substrate processing apparatus, method of manufacturing semiconductor device, and method of processing substrate

An electromagnetic relay includes an electromagnet, an armature configured to shift in response to a magnetic force generated by the electromagnet, a movable spring having a movable contact disposed thereon, a fixed spring including a first contact strip and a second contact strip, the first contact strip having a first fixed contact disposed thereon, the second contact strip having a second fixed contact disposed thereon, the first fixed contact and the second fixed contact facing the movable contact, and a linkage member configured to link the armature and the movable spring to shift the movable spring in conjunction with movement of the armature.

Electromagnetic relay

An information processing device includes a first input interface to receive data transferred in a first transfer mode in which a plurality of elements of the data each belonging to a same line of a plurality of lines are transferred in parallel, a second input interface to receive data transferred in a second transfer mode in which a plurality of elements of the data each belonging to a corresponding one of the plurality of lines are transferred in parallel, a mode selection circuit to change a transfer mode of the data from the second input interface from the second transfer mode to the first transfer mode based on a signal indicating selection of the second input interface, and an output interface to output one of the data from the first input interface and the data from the second input interface.

Information processing device, image system, and method of transferring data

Described herein is a technique capable of improving the uniformity of device characteristics. According to the technique described herein, there is provided a method of processing a substrate, including: (a) loading a substrate having a patterned hard mask into a process chamber; (b) supplying a metal-containing gas at a first pressure into the process chamber; and (c) supplying an inert gas into the process chamber and storing the metal-containing gas at a second pressure lower than the first pressure after performing (b).

Method of processing substrate

An electromagnetic relay includes an electromagnet unit, a contact unit including a movable contact spring with a movable contact provided thereon and a fixed contact spring with a fixed contact provided thereon, and a base block configured to support the electromagnet unit and the contact unit, wherein the electromagnet unit is supported at a first face of the base block, and the contact unit is supported at a second face of the base block facing in an opposite direction from the first face, and wherein the base block includes a first insulating wall extending from the first face alongside the electromagnet unit and a second insulating wall extending from the second face alongside the contact unit, the second insulating wall being situated on an opposite side from the first insulating wall across the second face.

A mobile electronic equipment includes a gyro sensor that detects an angular velocity, a first housing with the gyro sensor disposed therein, a second housing movably connected to the first housing, an angle formed between the respective housings being changed by movement of the first housing, and a control unit that calculates a change in an angle formed between the first housing and the second housing before and after the movement as a measured angle, based on output data of the gyro sensor. The control unit calculates a correction value for the output data of the gyro sensor based on the measured angle and a reference angle set in advance (see FIG.).

Mobile electronic equipment with gyro sensor, gyro sensor correction method, and program

A method of manufacturing a semiconductor device includes forming a first insulating film as a portion of a laminated insulating film on a substrate in which a plurality of circuit configurations is formed; polishing the first insulating film; measuring a film thickness distribution of the first insulating film; and forming a second insulating film as a portion of the laminated insulating film on the polished first insulating film at a film thickness distribution differing from the film thickness distribution of the first insulating film to correct a film thickness of the laminated insulating film.

Method of manufacturing semiconductor device

A substrate processing apparatus includes a robot having: an end effector, a first link structure including a fixing portion having a front end to which the end effector is fixed, a support portion, and a first hole formed in the support portion, a second link structure including a second hole, and a shaft inserted into the first and second holes, the shaft including an upper end having a height equal to or smaller than a height of the substrate mounted on the end effector; a vacuum transfer chamber, wherein the robot is installed in the vacuum transfer chamber; at least one process chamber disposed adjacent to the vacuum transfer chamber and configured to thermally process the substrate transferred from the vacuum transfer chamber by the robot; a module including one or more process chambers; and a cooling mechanism installed above the first link structure or the shaft.

Growing community of inventors

Tokyo, Japan

Satoshi Takano