National Research Institute for Metals

National Space Development Agency of Japan

Satoshi Takahashi

Nobuyuki Koguchi

Toyohiro Chikyou

Sinya Hashimoto

Isao Nakatani

Kiyoshi Ozawa

Isao Nishida

A seed crystal is connected with a polycrystal at one end of the polycrystal, the connected crystal material is melted under a zero-gravity or microgravity environment without any container, and a single crystal is grown.

Method of production of single crystal

A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the surface of the semiconductor substrate at least comprising a first and a second elemental component and a semiconductor overlayer overlying said quantum well boxes and the surface portion of the exposed semiconductor substrate and wherein the quantum well boxes have an epitaxially grown single crystal structure obtained by depositing fine droplets of liquid phase composed of the first elemental component on the surface of the semiconductor substrate in the heated state and then incorporating a second elemental component different from the first elemental component in said droplets.

Quantum effective device and process for its production

Growing community of inventors

Tsukuba, Japan

Satoshi Takahashi