Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Denso Corpora Tion

Satoshi Takahagi

Takuya Kadoguchi

Shingo Iwasaki

Takanori Kawashima

Syou Funano

Yuji Hanaki

Keita Hatasa

Atsuko Yamanaka

Yuuji Hanaki

Hiroyuki Takeda

Shou Funano

A semiconductor device may be provided with a first member, a second member joined to a first region of the first member via a first solder layer and a third member joined to a second region of the first member via a second solder layer. The first region and the second region are located on one side of the first member. The first solder layer contains a plurality of support particles that is constituted of a material having a higher melting point than the first solder layer. The second solder layer does not contain any support particles.

Semiconductor device

A semiconductor device may include a first conductor plate, a first semiconductor element that is a sole semiconductor element disposed on a main surface of the first conductor plate, an encapsulant encapsulating the first semiconductor element and a first power terminal connected to the first conductor plate within the encapsulant and projecting from the encapsulant along a first direction. The main surface of the first conductor plate may include a first side located close to the first power terminal and a second side located opposite the first side with respect to the first direction. With respect to the first direction, a distance from the first semiconductor element to the first side may be larger than a distance from the first semiconductor element to the second side.

A semiconductor device includes a semiconductor element, a first conductor bonded to an upper surface of the semiconductor element via a first solder layer, and a second conductor bonded to an upper surface of the first conductor via a second solder layer. The first conductor includes at least one groove formed in a stacking direction of the semiconductor element, the first conductor, and the second conductor on a side surface adjacent to the upper surface of the first conductor.

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device that includes a resin package sealing a semiconductor element and a pair of metal plates interposing the semiconductor element therebetween, in which each of the pair of metal plates is exposed at corresponding one of both surfaces of the resin package is disclosed. The method may include preparing an assembly in which the semiconductor element is connected to the pair of metal plates; setting the assembly in a cavity of a mold, wherein one metal plate is in contact with a bottom surface of the cavity and a space is provided above the other metal plate; forming the resin package by injecting a molten resin into the cavity so as to cover an upper side of the other metal plate, stopping the injecting of the molten resin with a part of the space on an upper side of the cavity unfilled.

Method of manufacturing semiconductor device

A semiconductor device includes an electrode plate, a metallic member, and solder connecting the metallic member with the electrode plate. On a surface of the electrode plate, a first groove and a group of second grooves are provided. The first groove has first to fourth linear parts. The group of second grooves is arranged within a range surrounded by the first groove, and has end portions on an outer periphery side that are connected with the first groove. The group of second grooves includes first to fourth sets. Each of the sets includes a plurality of second grooves connected with the first to fourth linear parts. When the metallic member is seen in a lamination direction of the electrode plate and the metallic member, an outer peripheral edge of a region of the metallic member, the region being connected with the solder, goes across the first to fourth sets.

Semiconductor device, manufacturing method for semiconductor device, and electrode plate

A semiconductor device includes a first metal plate and a second metal plate which interpose a first semiconductor element therebetween, the first metal plate and the second metal plate being bonded to the first semiconductor element with first soldered portions; and includes a third metal plate and a fourth metal plate which interpose a second semiconductor element therebetween, the third metal plate and the fourth metal plate being bonded to the second semiconductor element with second soldered portions. A first joint provided at an edge of the first metal plate and a second joint provided at an edge of the fourth metal plate are bonded with a third soldered portion. A total sum of thicknesses of the first soldered portions is different from a thickness of the third soldered portion, a solidifying point of the thinner one is higher than a solidifying point of the thicker one.

A semiconductor device may include: a first and a second semiconductor elements each including electrodes on both surfaces thereof; a first and a second metal plates which interpose the first semiconductor element, the metal plates respectively being bonded to the first semiconductor element via first soldered portions; and a third and a fourth metal plates which interpose the second semiconductor element, the metal plates respectively being bonded to the second semiconductor element via second soldered portions; wherein a first joint is provided at the first metal plate, a second joint is provided at the fourth metal plate, the joints are bonded via a third soldered portion, and a solidifying point of the first soldered portions is higher than a solidifying point of the third soldered portion, and a solidifying point of the second soldered portions is higher than the solidifying point of the third soldered portion.

Growing community of inventors

Nagakute, Japan

Satoshi Takahagi