Tokyo Electron Limited

Clarion Co

Sony Corporation

Tdk Corporation

Japanese Foundation for Cancer Research

Sony Semiconductor Solutions Corporation

Tokyo Electron Limi Ted

Lsip, LLC

Satoshi Takagi

Yukio Ito

Hideki Hayashi

Kazuki Takai

Akinobu Kakimoto

Mitsuhiro Okada

Hiroyuki Hayashi

Kazumasa Igarashi

Toshihiro Iguchi

Masao Sasaki

Akitoshi Yoshii

Tatsuya Kojima

Satoshi Miyazawa

Kikuo Yoshikawa

Toshio Watanabe

Hsiulin Tsai

Kazuhide Hasebe

Masahito Mori

Atsushi Endo

Shigeru Nakajima

Yutaka Motoyama

Masahiko Tomita

Katsuhiko Komori

Naoya Fujita

Takahiro Miyahara

Kazuya Takahashi

Keisuke Fujita

Yukio Itoh

Sadayoshi Endo

Akari Matsunaga

Kazuya Kitamura

Hiroshi Nakano

Daisuke Suzuki

Yutaka Takahashi

Tatsuya Yamaguchi

Keiko Abe

Akira Takahashi

Wataru Watanabe

Hiroki Murakami

Yasuo Yamada

Masaaki Isozaki

Noboru Yanagita

Yamato Tonegawa

Koji Yoshii

Hiroshi Sumihiro

Masahisa Watanabe

Toshiyuki Ikeuchi

Masahiro Uno

Toshiharu Nishimura

Masao Tanaka

Dan Sakurai

Masayuki Tamura

Sanshiro Aman

Isao Hasegawa

Yasuhiro Matsui

Yukinao Kenjo

Takahiro Ikarashi

Ryou Son

Rui Kanemura

Toshihiko Takahashi

Tadashi Yokota

Yoshimasa Watanabe

Tokuji Negishi

Toshihiro Ikahata

Masafumi Shoji

Hirotoshi Nara

Masao Ito

Yuji Takahashi

Ito Yukio

Kazuki Yano

Yuya Nakazawa

Akihiko Saotome

Yuki Kamada

Takaya Sekiguchi

A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.

Method for manufacturing semiconductor device and substrate processing apparatus

A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.

Method for forming silicon film and processing apparatus

There is provided a film forming method including: adsorbing fluorine onto a substrate on which a region in which a nitride film is exposed and a region in which an oxide film is exposed are provided adjacent to each other by supplying a fluorine-containing gas to the substrate, and forming a stepped surface on a side surface of the oxide film by selectively etching the nitride film, among the nitride film and the oxide film, so as to cause a surface of the nitride film to be more deeply recessed than a surface of the oxide film; and after the adsorbing the fluorine onto the substrate and forming the stepped surface, selectively forming a semiconductor film on the nitride film, among the nitride film and the oxide film, by supplying a raw material gas including a semiconductor material to the substrate.

Film forming method and film forming apparatus

Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

Heat insulation structure at lower end of vertical heat treatment apparatus and vertical heat treatment apparatus including heat insulation structure thereof

A film forming method includes: removing a natural oxide film formed on a front surface of a metal-containing film by supplying a hydrogen fluoride gas to a substrate accommodated in a processing container, the substrate having the metal-containing film formed thereon, and the metal-containing film including no metal oxide film; and forming a silicon film on the metal-containing film by supplying a silicon-containing gas into the processing container, wherein the step of forming the silicon film occurs after the step of removing the natural oxide film.

There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.

Film forming method and substrate processing apparatus

A heat treatment apparatus includes a processing container that accommodates a plurality of substrates, a gas supply unit that supplies a raw material gas into the processing container, an exhaust unit that exhausts the raw material gas in the processing container, and a heating unit that heats the plurality of substrates. The gas supply unit includes a gas supply pipe including: a first straight pipe portion that extends upward along a longitudinal direction of an inner wall surface of the processing container; a bent portion where a distal end side that extends above the first straight pipe portion is bent downward; a second straight pipe portion that extends downward from the bent portion; and a plurality of gas ejecting holes formed on the second straight pipe portion. The first straight pipe portion has a larger cross-sectional area than the second straight pipe portion.

Heat treatment apparatus and heat treatment method

A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess.

Method of filling recess

An information processing device including a sound output control unit that performs control related to sound output, in a case where an image captured at a first frame rate is subjected to display reproduction at a second frame rate lower than the first frame rate, on the basis of at least one of an input image signal, an input sound signal, reproduction speed information indicating a ratio between the first frame rate and the second frame rate, or user input information, in which the control related to the sound output performed by the sound output control unit includes switching control that selects one sound output method from a plurality of sound output methods and performs switching, or mixing control that performs mixing of sound signals obtained by the plurality of sound output methods.

Information processing device

A method of forming a silicon film in a recess formed in a target substrate includes: preparing a target substrate having a recess in which a plurality of different bases is exposed; forming an atomic layer seed on at least an inner surface of the recess by sequentially supplying a raw material gas adapted to the plurality of different bases and a reaction gas reacting with the raw material gas to the target substrate one or more times while heating the target substrate to a first temperature; and forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a first silicon raw material gas to the target substrate while heating the target substrate to a second temperature.

Method and apparatus for forming silicon film

A novel domain of Aggrus involved in the binding to CLEC-2 was searched for, and monoclonal antibodies recognizing the domain were obtained. The newly found PLAG4 domain is important for Aggrus binding to CLEC-2. Monoclonal antibodies recognizing this region were further developed. The present invention can provide novel Aggrus-CLEC-2 binding inhibitors, platelet aggregation inhibitors, cancer metastasis inhibitors, and tumor growth inhibitors using these antibodies.

Anti-Aggrus monoclonal antibody, domain in Aggrus which is required for binding to CLEC-2, and method for screening for Aggrus-CLEC-2 binding inhibitor

There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.

Film forming apparatus, film forming method and heat insulating member

A silicon film forming method of forming a silicon film in a recess with respect to a target substrate having on its surface an insulating film in which the recess is formed. The method includes (a) forming a first silicon film filling the recess by supplying a Silicon raw material gas onto the target substrate, (b) subsequently, etching the first silicon film by supplying a halogen-containing etching gas onto the target substrate such that surfaces of the insulating film on the target substrate and on an upper portion of an inner wall of the recess are exposed and such that the first silicon film remains in a bottom portion of the recess, and (c) subsequently, growing a second silicon film in a bottom-up growth manner on the first silicon film that remains in the recess by supplying a Silicon raw material gas onto the target substrate after the etching.

Method and apparatus for forming silicon film and storage medium

There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece.

A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.

Thin film forming method

Growing community of inventors

Nirasaki, Japan

Satoshi Takagi