Tokyo Electron Limited

Satoshi Taga

Atsushi Gomi

Masamichi Hara

Yoshiyuki Kobayashi

Tatsuo Hatano

Yasushi Mizusawa

Kaoru Yamamoto

Naoyuki Satoh

Tatsuo Nishita

Kazuya Nagaseki

Osamu Yokoyama

Chiaki Yasumuro

Shinji Maekawa

A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

Substrate placing table and substrate processing apparatus

Disclosed is a method of manufacturing an electrostatic chuck configured to attract a substrate by applying a voltage to a first electrode layer. The method includes forming the first electrode layer on a first resin layer on a base and thermally spraying ceramics or a ceramics-containing material on the first electrode layer. The thermally spraying the ceramic or the ceramics-containing material includes transporting powder of a thermal spray material, introduced into a nozzle from a feeder, by a plasma generation gas and spraying the powder from an opening in a tip end portion of the nozzle, dissociating the sprayed plasma generation gas by electric power of 500 W to 10 kW to generate plasma having a common axis with the nozzle, and forming the powder of the thermal spray material into a liquid phase by the generated plasma to form a film on the first electrode layer.

Method of manufacturing electrostatic chuck and electrostsatic chuck

A susceptor for receiving a substrate, the susceptor including a ceramics base member, a conductive layer formed on a top surface of the ceramics base member and a side surface of the ceramics base member, the top surface of the ceramics base member configured to receive and support the substrate, and a conducting member contacting the conductive layer at an outer surface of the ceramics base member.

Substrate processing apparatus and susceptor

A substrate processing apparatus includes a chamber, a susceptor to receive a substrate and provided in the chamber, a gas supply source to supply a predetermined gas into the chamber, and a high frequency power source to treat the substrate by plasma. The susceptor includes a first ceramics base member including a flow passage to let a coolant pass through, a first conductive layer formed on a principal surface and a side surface on a substrate receiving side of the first ceramics base member, and an electrostatic chuck stacked on the first conductive layer and configured to electrostatically attract the wafer received thereon. A volume of the flow passage is equal to or more than a volume of the first ceramics base member. The high frequency power source is configured to supply high frequency power to the first conductive layer.

The method of forming a thin film feeds a raw material gas causing a reversible decomposition reaction toward an upper surface of substrate placed on a placing table in a processing container; decomposes the raw material gas with a predetermined decomposing scheme thereby forming a thin film of the raw material gas on the surface of the substrate; and feeds a decomposition restraint gas having a characteristic of restraining a thermal decomposition of the raw material gas separately from the raw material gas toward a peripheral portion of the substrate when the raw material gas is fed to the substrate, thereby restraining the thermal decomposition of the raw material gas and selectively preventing the thin film from being formed in the peripheral portion of the substrate.

Film forming method using reversible decomposition reaction

A time for doping an electrode material on an electrode sheet with a lithium ion can be reduced. The electrode manufacturing apparatus includes a processing chamberto and from which the electrode sheet is loaded and unloaded; and a lithium thermal spraying unitconfigured to dope a carbon material C with the lithium ion by forming a lithium thin film on the carbon material of the electrode sheet W loaded into the processing chamber while melting and spraying lithium-containing powder. Further, the lithium thermal spraying unitincludes a lithium-containing powder supply unitconfigured to discharge the lithium-containing powder toward the electrode material of the electrode sheet, and at least one heating gas supply unitconfigured to supply a heating gas that melts the lithium-containing powder discharged from the lithium-containing powder supply unit.

Electrode manufacturing apparatus for lithium ion capacitor

A time for doping an electrode material on an electrode sheet with a lithium ion can be reduced. The electrode manufacturing apparatus includes a processing chamberto and from which the electrode sheet is loaded and unloaded; a rare gas supply unitconfigured to introduce a rare gas into the processing chamber; an exhaust deviceconfigured to exhaust an inside of the processing chamber to a certain vacuum level; and a lithium thermal spraying unitconfigured to dope a carbon material C with the lithium ion by forming a lithium thin film on the carbon material of the electrode sheet W loaded into the processing chamber while melting and spraying lithium-containing powder.

Electrode manufacturing apparatus for lithium ion capacitor and electrode manufacturing method therefor

The disclosed deposition device for forming a thin film using a starter gas comprising an organic metal compound is provided with: a processing container; a mounting platformwhich has a heaterfor heating the workpiece W; a gas introduction mechanismwhich introduces the starter gas toward the area more exterior than the outer peripheral end of the workpiece W on the mounting platform; an internal partition wallwhich is disposed such that the lower end of said processing space contacts the mounting platformto form gas outletsbetween the lower portion of the space and the edges of the mounting platform; and a orifice forming memberwhich extends radially inward toward the mounting platformand forms an orificecommunicating with the gas outlet

Deposition device

A substrate mounting mechanism on which a target substrate is placed is provided. The substrate mounting mechanism includes a heater plate, which has a substrate mounting surface on which the target substrate is placed and has a heater embedded therein to heat the substrate to a deposition temperature at which a film is deposited. The substrate mounting mechanism also includes a temperature control jacket, which is formed to cover at least a surface of the heater plate other than the substrate mounting surface and adjusts the temperature to a non-deposition temperature below the deposition temperature.

Substrate mounting mechanism, and substrate processing apparatus

Disclosed is a method for film formation, comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.

Method for film formation, apparatus for film formation, and computer-readable recording medium

Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas.

Mounting table structure, film forming apparatus and raw material recovery method

A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled.

Film formation method and film formation apparatus

Disclosed is a method for film formation, characterized by comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.

Growing community of inventors

Miyagi, Japan

Satoshi Taga