Tdk Corporation

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Satoshi Shirai

Kenji Sasaki

Shinji Iwatsuka

Yukie Mori

Masahiro Shinkai

Emiko Kambe

Tokuhiko Handa

Akira Ebisawa

Masaki Noda

Toshitaka Aoyagi

Tetsushi Inoue

Kenichi Nakura

Kazuyuki Ishida

Yukio Hirano

Disclosed herein is an optical waveguide element that includes a substrate and a waveguide layer formed on the substrate and comprising lithium niobate. The waveguide layer has a slab part having a predetermined thickness and a ridge part protruding from the slab part. The maximum thickness of the slab part is 0.05 times or more and less than 0.4 times a wavelength of a light propagating in the ridge part.

Optical waveguide element and optical modulator using the same

A light receiving device that receives a light signal includes: a plurality of avalanche photodiodes, in each of which receiving sensitivity is set in accordance with a bias signal that is provided; a plurality of level conversion units provided in association with the avalanche photodiodes, each of the level conversion units being configured to convert a level of a reference voltage for obtaining the bias signal so as to generate the bias signal and being configured to provide the bias signal to corresponding one of the avalanche photodiodes; and a control unit that generates a first control signal corresponding to a temperature of the light receiving device, and controls a level conversion amount of each of the level conversion units by using the first control signal.

Light receiving device

Organic EL elements provided with a substrate, a first electrode layerand a second electrode layersituated in a mutually opposing manner on one side of the substrate, and a luminescent layersituated between the electrode layers, wherein one of the first electrode layerand the second electrode layeris a hole injection electrode layer and the other is an electron injection electrode layer, and there is formed in the luminescent layera modified sectionwhich contains an organic polymer compound different from the organic compound composing the luminescent layer, in bias toward the electron injection electrode layer.

Organic EL elements and process for fabrication thereof

An organic EL element of the present invention comprises a substrate, an electrode layer, an organic layer, and an electrode layer, whereas the organic layercontains a vinyl polymer obtained by polymerizing a polymerizable monomer containing a compound represented by formula (1) or (2): wherein each of Land Lis a bivalent group; each of X, X, X, X, X, and Xis alkyl group or the like; each of a and e is 0 or 1; each of b, f, g, and h is an integer of 0 to 3; c is an integer of 0 to 2; and d is an integer of 0 to 4.

Organic EL element and organic EL display

A thermistor is provided with a pair of opposed electrodes, and a thermistor body layer disposed between the pair of electrodes and including a cured body of a curable resin composition containing a thermosetting resin and conductive particles, and an average particle diameter of secondary particles of the conductive particles is in a range of 3.8 to 17.0 &#x3bc;m.

Thermistor

There is provided a process for producing an organic PTC thermistor including the steps of: At least one of the mixing step, the layer-forming step and the laminating step is conducted under reduced pressure. An organic PTC thermistor obtained by the production process is also provided.

Organic PTC thermistor and production

In a refractive index coupling distributed semiconductor laser having a &#x39b;/2-phase-shift distributed feedback structure with a diffraction grating having a refractive index coupling property on an active layer, when viewed in a light distributed feedback direction, a value of (duty of a high refractive index portion)/(duty of a low refractive index portion) of a diffraction grating in a rear end face region is larger than that of a diffraction grating in a front end face region. In this manner, a coupling coefficient &#x3ba;2 in a front end face region of a conventional semiconductor laser is smaller than a coupling coefficient &#x3ba;1 in a rear end face region and is larger than 100 cm.

Semiconductor laser

This invention relates to a thermistor comprising a pair of opposite electrodes and a thermistor body positioned between the pair of electrodes, wherein the thermistor body consists of a cured product of the resin composition comprising an epoxy resin including a cycloaliphatic epoxy resin, a curing agent and electrically conducting particles.

Resin composition for forming thermistor body, and thermistor

The invention provides an organic positive temperature coefficient thermistor provided with a pair of mutually opposing electrodes and a thermistor element with a positive resistance-temperature characteristic situated between the pair of electrodes, wherein said thermistor element contains a cured body derived from a mixture comprising an epoxy resin, a curing agent and conductive particles, and there is included in the epoxy resin and/or curing agent a compound which imparts flexibility to the cured body.

Growing community of inventors

Tokyo, Japan

Satoshi Shirai