Tokyo Ohka Kogyo Co., Ltd.

Riken Corporation

Toshiba Kikai Kabushiki Kaisha

Ulvac, Inc.

Marubun Corporation

National Institute of Advanced Industrial Science and Technology

Satoshi Shimatani

Kazuyuki Nitta

Hideki Hirayama

Ken Miyagi

Mitsunori Kokubo

Takaharu Tashiro

Satoshi Niikura

Ryuichiro Kamimura

Takafumi Ookawa

Yamato Osada

Yukio Kashima

Eriko Matsuura

Toshimasa Nakayama

Hidekatsu Kohara

Kenji Maruyama

Takeyoshi Mimura

Masahiro Masujima

Tatsuya Matsumi

Waki Okubo

Yusuke Nakagawa

Kazufumi Sato

Kousuke Doi

Masaki Kurihara

Daisuke Kawana

Hideki Takagi

Shinichi Hidesaka

Waki Ohkubo

Masafumi Jo

Noritoshi Maeda

Sung Won Youn

Toshihiro Yamaguchi

A composition for nanoimprint including a cycloolefin-based copolymer; a polymerizable monomer; and a photoinitiator. The polymerizable monomer of the present invention may include a polyfunctional monomer, and the cycloolefin-based copolymer may include a constituent unit having a cyclic olefin and a constituent unit having an acyclic olefin.

Composition for nanoimprint, cured product, pattern forming method, and article having pattern

Provided is a deep ultraviolet LED with a design wavelength &#x3bb;, including an Al reflecting electrode layer, an ultrathin metal layer, and a transparent p-AlGaN contact layer that are sequentially arranged from a side opposite to a substrate, and a photonic crystal periodic structure provided in the range of the thickness direction of the transparent p-AlGaN contact layer. The photonic crystal periodic structure has a photonic band gap.

Deep ultraviolet LED and method for manufacturing the same

A semiconductor light emitting element with a design wavelength of &#x3bb;, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength &#x3bb; satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength &#x3bb; becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.

Semiconductor light emitting element and method for producing the same

A deep ultraviolet LED with a design wavelength of &#x3bb; is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of &#x3bb;; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.

Chemically amplified positive photo resist composition and method for forming resist pattern

To provide a chemical amplification type positive photoresist composition, which has high sensitivity, high heat resistance and high resolution (high contrast) and is capable of suppressing an undulation phenomenon, and a method for formation of a resist pattern, a chemical amplification type positive photoresist composition comprising (A) an alkali soluble resin comprising a hydroxystyrene constituent unit (a1) and a styrene constituent unit (a2), (B) a crosslinking agent, (C) a photo acid generator, and an organic solvent is prepared and a resist pattern is formed by using the same.

Chemical amplified positive photo resist composition and method for forming resist pattern

A positive resist composition capable of realizing an improvement in resolution, a reduction in LER, and a reduction in the level of defects, as well as a method of forming a resist pattern. This composition and method provide: (wherein in the general formulas (1) and (2), R represents a hydrogen atom or a methyl group).

Positive resist composition and method of forming resist pattern using same

The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).

Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device

Positive resist composition of chemical amplification type, resist coated material, method of forming resist pattern, and process for producing semiconductor device

The invention discloses a crosslinked chemical-amplification positive-working photoresist composition of good pattern resolution and storage stability, which is suitable for pattern size diminution by the thermal flow process after development. The composition comprises: (A) a polyhydroxystyrene resin substituted for a part of the hydroxyl hydrogen atoms by acid-dissociable solubility-reducing groups; (B) a radiation-sensitive acid-generating compound; (C) a polyvinyl ether compound as a crosslinking agent; (D) a carboxylic acid; and (E) an amine compound.

Positive-working photoresist composition and resist patterning method using same

The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis&lsqb;4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl&rsqb;-4-methylphenol, where the average degree of esterification of 20% to 80%.

Positive photoresist composition and process for synthesizing polyphenol compound

Positive photoresist composition and process and synthesizing polyphenol compound

Growing community of inventors

Kawasaki, Japan

Satoshi Shimatani