Hitachi, Ltd.

Other

Hitachi Car Engineering Co., Ltd.

Hitachi Automotive Engineering Co., Ltd.

Hitachi, Ltd. and Hitachi Car Engineering Co., Ltd.

Hitachi Const. Mach. Company

Satoshi Shimada

Kazuji Yamada

Motohisa Nishihara

Masahiro Matsumoto

Seiichi Ugai

Atsushi Miyazaki

Seiko Suzuki

Keiji Hanzawa

Yoshio Sato

Junichi Horie

Seikou Suzuki

Nobuyoshi Tsuboi

Shigeki Tsuchitani

Akihiko Saito

Yukio Takahashi

Hiroshi Sasaki

Yasumasa Matsuda

Kanji Kawakami

Norio Ichikawa

Yasuo Onose

Norifumi Miyamoto

Seiji Kuryu

Hiroaki Koyanagi

Yoshitaka Matsuoka

Yoshihiro Yokota

Shigeyuki Kobori

Hiroshi Kuroiwa

Masayuki Miki

Masayoshi Kaneyasu

Akio Yasukawa

Masahiro Komachiya

Yoshimi Yamamoto

Hideki Nihei

Masanori Tanabe

Takeo Nagata

Hiromichi Ebine

Hiroyuki Minemura

Atsuo Watanabe

Takao Sasayama

Masahide Hayashi

Shigeru Oho

Tomoyuki Tobita

Susumu Murakami

Akira Sase

Atsumi Watanabe

Shinya Satou

Michitaka Shimazoe

Katsuhiko Kikuchi

Mitsuo Ai

Hideo Sato

Fumio Tajima

Masahiko Ibamoto

Kenji Miyata

Toshifumi Usui

Tetsuo Ito

Naohiro Momma

Yasushi Shimizu

Yasutoshi Kurihara

Terumi Nakazawa

Ko Soeno

Masanori Kubota

Masatoshi Tsuchiya

Shinji Ohyama

Yutaka Kobayashi

Mutsuhiro Mori

Akira Tanaka

Ryuichi Saito

Motoyuki Abe

Toshiyuki Innami

Takahiro Yamada

Tohru Ishikawa

Noriyuki Maekawa

Minoru Takahashi

Soshiro Kuzunuki

Ryoichi Kobayashi

Tadahiko Miyoshi

Takehiko Kowatari

Kazuhiro Suzuki

Shotaro Naito

Hiroshi Moriya

Noboru Baba

Akira Koide

Shin Kimura

Jin Onuki

Hirokazu Inoue

Ryo Hiraga

Kousuke Nakamura

Masaharu Tadauchi

Isao Kobayashi

Yasuo Matsushita

Mitsunari Kano

Akira Nagasu

Hiromi Kagohara

Syoji Sagae

Yutaka Sakurai

Kazuhiko Hanawa

Yusaku Nakagawa

Tsutomu Okayama

Syozo Kasai

Tomio Yasuda

An electronic device requires an electronic component to be mounted for the purpose of static shielding. The mounting of such an electronic component raises a problem of avoiding thermal stresses and cracks generated due to the difference between the coefficients of linear expansion of component materials. A positioning recess, a joining-substance thickness ensuring recess, a joining-substance thickness ensuring projection, etc. are formed in a combined manner in an electronic component mount portion of each of leads, whereby spreading of cracks generated in the joining substance can be suppressed and reliability can be improved. Filling a sealing material so as to seal and restrain the electronic component mounted in the electronic component mount portion without leaving voids contributes to further suppressing spreading of cracks generated in the joining substance and ensuring more improved reliability of the joining substance.

Electronic device and pressure sensor

A non-contact sensor for sensing a rotational position of a rotating object is provided. A ring-shaped permanent magnet magnetized in the axial direction is sandwiched between two pairs of magnetic plates from above and below. Two pairs of upper and lower protruded magnetic substance portions are provided between the upper and lower magnetic plates at opposite outer ends thereof. Magnetic sensitive devices are inserted in air gaps between the two pairs of upper and lower protruded magnetic substance portions. A magnetic flux generated from the ring-shaped permanent magnet is substantially concentrated to the protruded magnetic substance portions and passes the magnetic sensitive devices. The amount of magnetic flux passing each magnetic sensitive device is substantially proportional to the rotational angle of the ring-shaped permanent magnet. The rotational position of the ring-shaped permanent magnet and hence the rotational position of a rotating shaft supporting the ring-shaped permanent magnet can be sensed in a non-contact manner as a signal output from the magnetic sensitive device. Since the magnetic flux is effectively concentrated to positions where magnetic sensitive devices are attached, a non-contact rotational position sensor having high accuracy and high sensitivity can be obtained.

Non-contact rotational position sensor and throttle valve assembly including non-contact rotational position sensor

A sensor adjusting circuit for adjusting a digital sensor, whose circuit scale is small and which can maintain high accuracy in a wide adjustment range is provided. A sensor adjusting circuit for adjusting an analog input signal inputted from a sensor and outputting it as another analog output signal in accordance with a physical quantity to be sensed, comprises: a first analog-to-digital converter having an analog integrator () for integrating the analog input signal, a comparator () for comparing an output of the analog integrator with a predetermined value, and a D/A converter () for outputting an output of the comparator as the input signal; and a second digital-to-analog converter () for converting the output of the comparator and outputting it as the analog output signal.

Sensor adjusting circuit

Information storage elementand transmitter-receiverare molded in resin connector partof fuel injection valvewhich projects outside of the engine by molding. The precise control of an injection amount is enabled by using directly the characteristic of injection amount stored in information storage element, and obtaining the width of the injection command pulse corresponding to the injection amount instruction value. Thereby, the minimum injection amount which is the minimum value of the fuel supply amount which can be controlled is reduced.

Electromagnetic actuator, fuel injection valve, method of controlling fuel injection valve, and method of driving the same

A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circuit region are protected by the passivation film, and an effect of the passivation film on the mechanical displacement of a diaphragm portion can be alleviated so that the sensor with built-in circuits may be improved in the stability of the operation or characteristics.

Sensor with built-in circuits and pressure detector using the same

The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, thereby sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film. This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.

Semiconductor pressure sensor and pressure sensing device

By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 &#x3bc;m, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.

Capacitive type pressure sensor

A pressure sensor of electric capacitance type which includes a plurality of pressure sensor units connected in parallel with one another and each formed on a substrate by an electrode, a cavity region and a diaphragm having an electrically conductive film which is disposed in opposition to the electrode with the cavity region intervening between the electrode and the diaphragm, wherein diaphragm fixing portions are disposed internally of the cavity region so that a single sheet of the diaphragm is partitionarily and regionally allotted to regions of the plural pressure sensor units, respectively. With this structure of the capacitance-type pressure sensor, ineffective region for capacitance detection is minimized and hence the parasitic capacitance can be reduced with the detection accuracy of the sensor being improved.

Capacitance-type pressure sensor

An S/N ratio of an output of a semiconductor pressure sensor is improved, the sensor being of an electrostatic capacitance type pressure sensor for generating an output based upon a ratio between capacitances of a pressure sensitive capacitance element and a reference capacitance element. This semiconductor pressure sensor has: a pressure sensitive capacitance element having an electrostatic capacitance Cs changing with a pressure to be detected; a reference capacitance element having an electrostatic capacitance Cr not changing with the pressure; and a unit for detecting the pressure by outputting a signal corresponding to a ratio between the capacitances Cs and Cr, wherein an initial value Cr of the capacitance Cr and an initial value Cs of the capacitance Cs are defined by 1.2<Cr /Cs <1.8. The Cr /Cs ratio is adjusted by changing the electrode area or the like of both the elements. In this manner, it is possible to obtain a large pressure gauge output &Dgr;V, lower an amplification factor of the amplifier, and provide a high precision of the sensor.

Semiconductor pressure sensor utilizing capacitance change

The present invention provides a pressure detector capable of easily responding to changes in specification. The pressure detector has a sensor unit for detecting pressure and electronic parts for reducing electrical disturbance which are electrically joined to an exposed part of lead material of an opening of an external case. Thermoset resin is injected and set in the opening to obtain fixed members. An external electronic part for compensating for transient voltage resistance and electromagnetic failure resistance of a single one-chip semiconductor sensor can be mounted, and cost can be reduced by miniaturization, light weight, and reduction in man-hours required for assembly.

Pressure detecting apparatus

A high-accuracy high-stability capacitor type pressure sensor which eliminates a parasitic capacitance between a reference capacitor and a semiconductor substrate. A capacitor type pressure sensor comprising, on a semiconductor substrate , an active capacitor whose capacitance varies as the surrounding pressure varies, a reference capacitor whose capacitance will not vary substantially as the surrounding pressure varies, and a circuit which is electrically connected to both said active and reference capacitors and detects the difference or ratio thereof, and uses the potential of a semiconductor substrate, wherein an electrode of said reference capacitor is formed on the semiconductor substrate with a dielectric therebetween.

Capacitive pressure sensor

Dynamic quantitative displacement is converted stably and straight into voltage (D.C. output) by using a high speed detection driving frequency without restricting a response of an operational amplifier. When a dynamic quantity detection electrostatic capacitance changes according to a dynamic quantity, electric charges stored in this element and in a reference electrostatic capacitance become unbalanced to produce a difference value, and an output of an operational amplifier changes according to the difference in electric charge quantity. However, the output becomes finally stable when the electric charges in the dynamic quantity detection electrostatic capacitance and in the reference electrostatic capacitance become equal. The output is proportional to a reciprocal of the dynamic quantity detection electrostatic capacitance and it is a D.C. voltage. Further, output without depending on integration feedback capacitance (feedback condenser) CF can be obtained.

Electrostatic capacitance type dynamical quantity sensor

A semiconductor module has a plurality of power semiconductor devices mounted on a substrate, and a metal foil for wiring is mounted on the substrate so that an asymmetric unit arrangement of the semiconductor devices is formed. In the device, all of the units are arranged in the same direction on the substrate, and all of the units are electrically connected with electrode terminal feet, and the electrode terminal feet are electrically connected with linkage terminal foot. The electrode terminal feet are disposed with a certain interval.

Semiconductor module

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Hitachi, Japan

Satoshi Shimada