Fujitsu Corporation

Satoshi Sekino

Shinji Sugatani

Akira Yamanoue

A laminated substrate is formed by laminating a device formation layer made of single crystalline semiconductor on a supporting substrate made of single crystalline semiconductor via an insulating layer with making one direction of a crystallographic axis of the device formation layer be shifted from a corresponding direction of a crystallographic axis of the supporting substrate. Semiconductor devices are formed in the device formation layer within a plurality of areas divided by scribe lines extending to a direction being parallel to a direction of a crystallographic axis where the supporting substrate is easy to be cleaved. The laminated substrate is split into a plurality of chips by cleaving the supporting substrate along the scribe lines. A semiconductor device can easily be split into chips even if a moving direction of carrier and an extending direction of wiring are shifted from an easy-cleaved direction of a crystallographic axis.

Manufacturing method of semiconductor device and semiconductor chip using SOI substrate, facilitating cleaving

A method for fabricating a semiconductor device comprises the steps of forming a polysilicon filmon a silicon substrate, implanting a dopant into a region of the polysilicon filmfor a resistance element to be formed in, patterning the polysilicon filmto from the resistance elementof the polysilicon filmwith the dopant inplanted in and gate electrodesof the polysilicon filmwith the dopant not implanted in. Accordingly, resistance element can be formed while suppressing influences on characteristics of the transistor formed on one and the same substrate concurrently with forming the resistance element.

Growing community of inventors

Kawasaki, Japan

Satoshi Sekino