Motorola Corporation

Asahi Kasei Kogyo Kabushiki Kaisha

Satoshi Sekine

Hidetaka Fukazawa

Kageyasu Akashi

Kazuhisa Tsuchiya

Fumio Matushita

Kazuya Miyazaki

Satoshi Hatsumori

Taichi Morikawa

The objective is to accurately determine the effective value of channel width in accordance with the design value of channel width when the channel width is scaled down, thereby accurately modeling the electrical characteristic of a MOSFET. An error &Dgr;W,based on the length of the region extending from the field oxide film to the gate oxide film, an error &Dgr;W,based on the &ldquo;effect of stress&rdquo; that occurs when the design value W of channel width is scaled down, and an error &Dgr;W,based on the &ldquo;effect of lithography&rdquo; that occurs when the design value L of channel length is scaled down, are predetermined with respect to various values of W and L, and the effective value We of channel width is determined according to an equation: We&equals;W&minus;&Dgr;W,&plus;&Dgr;W,&plus;&Dgr;W,. The resulting effective value We is used to model the electrical characteristic of the device.

Modeling method of MOSFET

An output driver that allows for static protection during generation of static discharge. The output driver includes a static protection circuit located between a predrive stage and a power drive stage.

Output driver for use in semiconductor integrated circuit

A static protection circuit for a semiconductor integrated circuit device which provides static protection for an integrated circuit driven on multiple different power supply voltages is provided. The static protection circuit comprises a transistor having its two controlled terminals connected to each of the power supply lines and a GND line, respectively, and its control line connected to one of said controlled terminals; and a transistor having its controlled terminals connected to each of said power supply lines and its control terminal to which a nonconductive voltage is applied.

Static protection circuit for a semiconductor integrated circuit device

A parallel transistor circuit 10 with non-volatile function is provided on a single semiconductor body, comprising an enhancement-type MOS transistor 1 having a drain electrode 25a connected to a drain node 25c, a gate electrode 37a connected to a gate node 37c, and a source electrode 23a connected to a source node 23c; and a floating gate-type MOS transistor 3 having a drain electrode 25b connected to the drain node, a floating gate 33, a control gate electrode 37b connected to the gate node, and a source electrode 23b connected to the source node.

Parallel transistor circuit with non-volatile function

A powder consisting of barium titanate powder, strontium titanate powder or a solid solution thereof, characterized in that (a) its average particle diameter is 0.07 to 0.5.mu., (b) its specific surface area measured is 20 m.sup.2 /g or less and does not exceed 2.5 times the specific surface area calculated from the average particle diameter on the assumption that the powder particles are spherical, (c) its crystallite diameter calculated from the half-width of the peak of the X-ray diffraction pattern for the powder is 0.05.mu. or more, and (d) its shape is substantially spherical. Said powder can be produced by reacting hydrous titanium oxide with barium hydroxide and/or strontium hydroxide at a temperature ranging from 60.degree. C. to less than 110.degree. C. in the presence of 120 to 2,000 moles of water per mole of titanium.

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Sendai, Japan

Satoshi Sekine