Renesas Technology Corp.

Mitsubishi Heavy Industries Limited

Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Renesas Electronics Corporation

Stanley Electric Co., Ltd

Canon Kabushiki Kaisha

Hitachi Ulsi Systems Co., Ltd.

Satoshi Sakai

Yoshikazu Tanabe

Nobuyoshi Natsuaki

Atsushi Hiraiwa

Satoshi Yamamoto

Masaru Izawa

Hiroyuki Kobayashi

Kenji Maeda

Kazunori Shinoda

Minoru Danno

Hideo Yamakoshi

Dai Ishikawa

Yutaka Kouzuma

Yasuyuki Kobayashi

Saneyuki Goya

Shuji Ikeda

Norio Suzuki

Yusuke Nonaka

Ryotaro Owada

Yasuko Yoshida

Masafumi Ohno

Yoshihiro Ikeda

Yasushi Kita

Yoichiro Tsumura

Akihiro Shimizu

Naoki Yamamoto

Tomohiro Saito

Masaru Hori

Kazutaka Mori

Fumio Ootsuka

Masatoshi Hasegawa

Yoshiaki Takeuchi

Toshiya Watanabe

Shigenori Tsuruga

Kengo Yamaguchi

Nobuya Miyoshi

Hiroshi Futami

Shizuma Kuribayashi

Noriko Yamazaki

Ryoichi Furukawa

Kohei Kawazoe

Akemi Takano

Takayuki Kanda

Norikatsu Myojin

Shinichi Horibe

Masami Iida

Mitsuo Yamada

Tomoyasu Furukawa

Shinya Sugino

Takashi Uemura

Ken'etsu Yokogawa

Makoto Miura

Kenji Ishikawa

Hiroshi Mashima

Nagatoshi Ooki

Takatoshi Suzuki

Tatsuyuki Nishimiya

Masatoshi Miyake

Hiroyuki Hayashi

Koji Satake

Eishiro Sasakawa

Daichi Matsumoto

Hiroomi Miyahara

Kouji Satake

Yohei Ishii

Youji Nakano

Masami Ilda

Katsuyuki Asaka

Kiyota Hachimine

Toshiaki Monaka

In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

Vacuum processing apparatus

A manufacturing process of a semiconductor device including a SiGe channel can form a Si segregation layer for protecting the SiGe channel without damaging the SiGe channel. A manufacturing method of a semiconductor device includes: a first step for performing plasma processing on a semiconductor substrate having a silicon layer and a silicon germanium layer formed on the silicon layer under a first condition to expose the silicon germanium layer; and a second step for performing plasma processing on the semiconductor substrate under a second condition to segregate silicon on the surface of the exposed silicon germanium layer. The silicon germanium layer or layers lying adjacent to the silicon germanium layer can be etched under the first condition, hydrogen plasma processing is performed under the second condition, and the first step and the second step are executed in series in the same processing chamber of a plasma processing apparatus.

Manufacturing method of a semiconductor device and a plasma processing apparatus

A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.

Etching method and etching apparatus

A plasma processing apparatus includes a processing chamber to be depressurized in a vacuum vessel with a sidewall made of a transparent or translucent dielectric material, a stage in the processing chamber to mount a wafer thereon, a coil disposed around an outer side of the sidewall and supplied with radio-frequency power for forming plasma above the stage in the processing chamber, a lamp disposed above the coil outside the vacuum vessel which radiates light onto the wafer, and a reflector disposed the coil and reflecting light to irradiate an inside of the processing chamber.

Plasma processing apparatus

Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200&#xb0; C. or higher. The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.

Heat treatment apparatus

In a region of a weak internal electric field, photocharges generated in a region deeper than the photodiode are diffused laterally to lower the sensitivity by photoelectrons flowing into adjacent pixels, etc (crosstalk). An anti-crosstalk layer is disposed in the photodiode forming portion, and between a pixel region and a peripheral circuit region. Crosstalk between a pixel and a pixel or between a pixel region and a peripheral circuit region is decreased to improve the photosensitivity.

Solid-state imaging apparatus

A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.

Photovoltaic device and process for producing photovoltaic device

Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by ZnMgO (0.096&#x2266;x&#x2266;0.183).

Photoelectric conversion device

A vehicle light can include a light emitting diode (LED) serving as a light source and an optical system for controlling a light distribution pattern of the light beams from the LED light source utilizing a light guide (such as a lens body having an inner reflecting surface). The vehicle light can project illumination light with a low beam light distribution pattern. The vehicle light can include an LED light source and a lens body serving as a light guide. The lens body can include a light incident surface, a reflecting surface, and a light exiting surface. The LED light source can have a rearmost end light emitting point from which light beams are emitted to form a bright-dark boundary line. Among the light beams, perpendicularly incident light beams not subjected to refraction can be projected toward the bright-dark boundary line while obliquely incident light beams that are subjected to refraction can be corrected to be directed in a lower angular direction than the bright-dark boundary line and to be mixed with the other light beams, thereby preventing color shading of illumination light from the vehicle light.

Vehicle light

An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.

Photoelectric-conversion-device fabrication method

An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer () that obtains a haze ratio of the thin film on the basis of the intensity of the light received by the light receiving element. The computer () has a haze ratio characteristic made by associating the haze ratio and the light intensity of the diffused transmitted light and obtains a haze ratio by using the haze ratio characteristic and the light intensity received by the light receiving element.

Thin-film inspection apparatus and inspection method

A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic devicehaving a photovoltaic layercomprising a crystalline silicon layer formed on a substrate, wherein the crystalline silicon layer has a crystalline silicon i-layer, and the crystalline silicon i-layerhas a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%.

Photovoltaic device

A thin-film inspection apparatus calculates a film thickness of a first transparent thin film and a second transparent thin film of an inspection-target substrate including the first and second transparent thin films and a transparent conductive film on a transparent glass substrate. The apparatus has a storage section storing at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum; a light irradiation section irradiating the inspection-target substrate with white light through the transparent glass substrate; a light receiving section receiving light reflected from the inspection-target substrate; and an arithmetic section obtaining measurement values of the feature values stored in the storage section from the spectral reflectance spectrum based on the reflected light received by the light receiving section, and calculating the film thickness of each of the first transparent thin film and the second transparent thin film.

Thin-film inspection apparatus and method therefor

Growing community of inventors

Yokohama, Japan

Satoshi Sakai