Sharp Kabushiki Kaisha Corporation

National University Corporation Toyohashi Universi

National University Corp Toyohashi University

Satoshi Saitoh

Kazuaki Sawada

Toshio Yoshida

Tomohiro Konishi

Kenichi Nagai

Provided is an ion sensor including a supporting substrate, a plurality of cells, a silicon substrate, a plurality of transistors, and an analog-digital conversion circuit. The plurality of cells, the plurality of transistors, and the analog-digital conversion circuit are provided above the supporting substrate. Each of the plurality of transistors has a corresponding gate provided on a first surface of the silicon substrate. The analog-digital conversion circuit is provided on the silicon substrate. The ion-sensing surface is provided on a second surface of the silicon substrate. The second surface is opposite to the first surface.

Ion concentration sensor

An ion sensor is configured such that part of a P well on which part a sensing section is provided is different, in dopant concentration, from the other part of the P well so that electric charges are injected merely to the sensing section in a state where a voltage is applied to an N-type substrate.

Chemical/physical phenomenon detecting device and method of producing the same

Growing community of inventors

Sakai, Japan

Satoshi Saitoh