Sharp Kabushiki Kaisha Corporation

Satoshi Saito

Keizo Sakiyama

Takao Kinoshita

Yukitaka Shimizu

Toyohiro Harazono

Shinjiro Kihara

Takahiro Maeda

Ryouichi Wakabayashi

A recording/reproducing apparatus () includes a storage section () having a content attribute database (DB) and a point database (DB). Further, a point calculating section () of the recording/reproducing apparatus () extracts attribute information sets for each content item from the content attribute database (DB). Further, deletion factor points associated with deletion factors corresponding to the extracted attribute information sets are extracted from the point database (DB) for each content item, and evaluation points are calculated in accordance with the extracted plural deletion factor points. This allows the user to appropriately reserve a space required in a recording medium.

Recording apparatus, method for controlling recording apparatus, control program of recording apparatus, and computer-readable recording medium

A semiconductor device comprising: a silicon nitride film formed on a semiconductor substrate having a first wiring layer; a first silicon oxide film formed on said silicon nitride film; and a second silicon oxide film formed on said first silicon oxide film by way of an atmospheric pressure CVD process using tetraethyl orthosilicate, siloxane, or disilazane as a source material.

Semiconductor device and method of fabricating the same

An insulating film is formed on a surface of a semiconductor substrate. Then a photoresist pattern including only one wedge-like area is formed on a surface of the insulating film. Next, a groove part is formed in the insulating film, using the photoresist pattern as a mask. Next, a titanium layer and a polycrystal-structured aluminum layer are embedded in the entire groove part. A monocrystal-structured aluminum layer is formed by heating the polycrystal-structured aluminum layer at 500 to 600.degree. C. and then cooling it down gradually. No monocrystal silicon to serve as a seed is needed in a bed. Therefore, for example, monocrystallization can be carried out even in second and third layers of multilayer wiring. This realizes a manufacturing method of wiring composed of a highly reliable monocrystal conductive film, which is widely applicable and especially appropriate to wiring of a semiconductor device.

Manufacturing method of wiring

A semiconductor device includes a pair of transistors each having an active region defined on a surface of a semiconductor substrate, a gate insulation film formed on the active region, a gate electrode formed on the gate insulation film, and a diffusion layer formed in the active region of the semiconductor substrate, one of the transistors having an opening formed by removing part of the gate insulation film on the active region, through which opening the diffusion layer is directly connected to the gate electrode of the other transistor, an end portion of the gate electrode intersecting the outer periphery of the opening at at least one point on the diffusion layer.

Semiconductor device and fabrication method thereof

A method for a wiring layer on a semiconductor substrate wherein a contact hole for a wiring layer is formed by laminating a lower insulating layer and an etching barrier layer on the semiconductor substrate providing electrodes via a gate insulating film, forming a hole in the etching barrier layer using a first mask pattern having a hole pattern in which a diameter of the hole thereof is larger than that of the contact hole to be formed, laminating an upper insulating layer and a second mask pattern having a hole pattern in which a diameter of the hole thereof is substantially the same as that of the contact hole, subjecting the lower and upper insulating layers and the gate insulating film to an isotropic etching and an anisotropic etching, utilizing the second mask pattern, thereby forming a contact hole having no exposure of the etching barrier layer at the side of wall of the contact hole.

Method for forming a wiring layer

A method of forming a contact is disclosed. The method of the present invention includes the steps of: forming an insulating layer on a silicon compound; forming a contact hole in the insulating layer, the contact hole reaching the silicon compound; forming at least one layer of a refractory material film on an inner wall of the contact hole and on a surface of the insulating layer; forming a silicon containing tungsten layer on the refractory material film by CVD; and growing tungsten on the silicon containing tungsten layer by CVD, to fill the contact hole with the tungsten wherein the silicon containing tungsten layer contains silicon in the range of 0.6 wt. % to 20 wt. %.

Growing community of inventors

Fukuyama, Japan

Satoshi Saito