Semiconductor Components Industries, LLC

Sanyo Semiconductor Co., Ltd.

Sanyo Electric Co., Ltd.

Satoshi Onai

Minoru Akaishi

Yoshiaki Sano

Yoshimasa Amatatsu

Katsuya Okabe

Akira Yamane

Hirotsugu Hata

Hiroshi Ishizeki

An object is to prevent a failure, such as a wiring separation or a crack, in an insulating film under a copper wire, in a semiconductor device formed by wire-bonding the copper wire on a portion above the copper wiring. A semiconductor device according to the present invention includes a copper wiring formed above a semiconductor substrate, a plated layer formed so as to cover a top surface and side surfaces of the copper wiring, and a copper wire which is wire-bonded on the plated layer above the copper wiring.

Semiconductor device and method of manufacturing the same

A conventional semiconductor device has a problem that reduction of a connection resistance value between wiring layers is difficult because of an oxide film formed between the wiring layers. In a semiconductor device of this invention, a first metal layer is embeded in opening regions which connect a first wiring layer and a second wiring layer and an opening is formed in a spin coated resin film formed on the first metal layer. In the opening, a Cr layer forming a plating metal layer and a Cu plated layer are connected to each other. With this structure, the spaces among crystal grains in portions in the Cr layer on the first metal layer are wide, which causes the portions to be coarse. In the coarse portions in the Cr layer, an alloy layer formed of the second metal layer and the Cu plated layer is formed, and thus, the connection resistance value is reduced.

Semiconductor device and manufacturing method of the same

In a semiconductor device according to the present invention, a plurality of opening regionstoare formed in an insulating film on a pad electrode. A metal layerformed on the pad electrodehas a plurality of concave portionstoformed therein by covering the opening regionsto. Moreover, in a peripheral portion at a bottom of each of the concave portionstoin the metal layer, the metal layerand a Cu plating layerreact with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode. Thus, a resistance value on the pad electrodeis reduced.

Semiconductor device and manufacturing method thereof

In a conventional method for manufacturing a semiconductor device, there are problems that a concave part is formed in a formation region of an isolation region, no flat surface is formed in the isolation region, and a wiring layer is disconnected above the concave part. In a method for manufacturing a semiconductor device of the present invention, when a silicon oxide film used for a STI method is removed, an HTO film covering an inner wall of a trench is partially removed to form a concave part in an isolation region. Thereafter, a TEOS film is deposited on an epitaxial layer including the concave part and is etched back. Accordingly, an insulating spacer is buried in the concave part. Thus, an upper surface of the isolation region becomes a substantially flat surface. Consequently, even if a wiring layer is formed above the concave part in the isolation region, disconnection thereof can be prevented. Moreover, in the isolation region, the substantially flat surface makes it possible to form a passive element such as a capacity element.

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Gunma, Japan

Satoshi Onai