Canon Kabushiki Kaisha

Satoshi Omata

Yoshiyuki Osada

Yutaka Hirai

Katsumi Nakagawa

Toshiyuki Komatsu

Takashi Nakagiri

Hiroshi Inoue

Masafumi Sano

Hiroshi Shimizu

Masahiko Enari

Shinichi Yamashita

Hisanori Tsuda

Mitsutoshi Kuno

Katsuji Takasu

Yoko Yamaguchi

Takashi Nakamura

Katsunori Hatanaka

Hideo Kanno

Tadashi Yamakawa

Yutaka Inoue

Hiroshi Satomura

Masanori Sakuranaga

Koichi Miyamae

The speech signal of one speaker in a plurality of signals of speakers can be isolated and recognized by using non-linear oscillators which lock on the fundamental and harmonic frequencies of the one speaker, whereby extraction of the one speaker's signals and speech recognition is done.

Speech processing apparatus

The apparatus recognizes a motion of an object which is moving and is hidden in an image signal, and discriminates the object from the background within the signal. The apparatus has an image forming unit comprising non-linear oscillators, which forms an image of the motion of the object in accordance with an adjacent-mutual-interference-rule, on the basis of the image signal. A memory unit, comprising non-linear oscillators, stores conceptualized meanings of several motions. A retrieval unit retrieves a conceptualized meaning close to the motion image of the object. An altering unit alters the rule, on the basis of the conceptualized meaning. The image forming unit, memory unit, retrieval unit and altering unit form a holonic-loop. Successive alterations of the rules by the altering unit within the holonic loop change an ambiguous image formed in the image forming unit into a distinct image.

Motion-pattern recognition apparatus

A semiconductor element comprises its main part constituted of a polycrystalline silicon semiconductor layer containing 0.01 to 1 atomic % of fluorine atoms.

Semiconductor element

This invention discloses a signal processing apparatus which has N nonlinear oscillators, a circuit for coupling the N nonlinear oscillators in a loop-like form, a circuit for shifting the phase of the output signal of a particular nonlinear oscillator from among the N nonlinear oscillators in correspondence with an input signal, and a circuit for outputting the output of at least one oscillator of the N nonlinear oscillators as the output of the signal processing apparatus. This apparatus has capability to effect analog conversion, modulation or storage of an input signal.

Signal processing apparatus

A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si.sub.n H.sub.m wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.

Method for forming deposited film

A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).

An image forming apparatus comprising an exposure light source, a printer head which comprises a group of micro-shutters each controlling the transmission or interruption of light from the exposure light source, and an image bearing so disposed to be irradiated with light signals transmitted through the printer head. The group of micro-shutters are arranged in a matrix comprising a plurality of rows and a plurality of columns. The group of micro-shutters are formed by a substrate having thereon a plurality of segment electrodes each forming a shutter and connected to a drain of a thin film transistor, another substrate having thereon a common electrode, and a liquid crystal interposed between the substrates. The image forming apparatus further comprises means for applying a scanning signal to the gate of the thin film transistor and applying an electric signal corresponding to image information in synchronism with the scanning signal.

Image forming apparatus and driving method therefor

An active matrix type display panel comprising a first base plate, a second base plate, and a liquid crystal disposed therebetween. The first base plate has thin film transistors formed thereon in the form of a matrix. The second base plate has a counter electrode formed thereon. The source of the thin film transistor are connected to information signal input electrodes which form counter electrodes of capacitive elements for sampling-and-holding information signals.

Active matrix-type display panel

A display panel having N scanning lines to which scan signal are inputted and M data lines to which information signals are inputted, includes transistor groups each connecting in common plural (n) scanning lines among N scanning lines, and a selector for selecting one of N/n scanning line blocks divided by the transistor groups.

Display panel

A thin film transistor comprises a substrate, a semiconductor layer comprising a polycrystalline silicon containing 3 atomic % or less of hydrogen provided on said substrate, a source region and a drain region provided in the surface part of said semiconductor layer, an insulating layer provided on said semiconductor layer at the portion between these two regions, a gate electrode provided on said insulating layer, a source electrode forming an electrical contact with the source region and a drain electrode forming an electrical contact with the drain region, the overlapping portions between said gate electrode through the insulating layer beneath said gate electrode and the source region and between said gate electrode through the insulating layer beneath said gate electrode and the drain region begin 2000 .ANG. or less in width.

Thin film transistor utilizing hydrogenated polycrystalline silicon

A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.

Semiconductor device including a semiconductor layer having a

A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.

Semiconductor device having junction formed from two different

In a method for driving a liquid-crystal display panel of the type in which each of display picture elements arranged in a matrix array is provided with a switching transistor; a common electrode is formed on a first base plate disposed in opposed relationship with a second base plate with display picture element electrodes thereon, a liquid crystal being sandwiched between the first and second base plates; and the liquid crystal is driven by an alternating electric field of two voltage levels given by switching the potential of the common electrode between two potential levels during each display cycle, the potential of the common electrode is either linearly or non-linearly decreased during a display period at the lower voltage level of the two voltage levels and the potential of the common electrode is also either linearly or non-linearly increased during a display period at the higher voltage level.

Method for driving liquid-crystal panel

A method for forming a deposited film comprises forming in a vacuum chamber housing a substrate therein a deposited film containing silicon on the substrate by subjecting a gas represented by the general formula: ##STR1## wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4, can be the same or different and are each independently hydrogen or a hydrocarbon group, to polymerization.

A semiconductor element having a main part of a polycrystalline silicon semiconductor layer containing 0.01 to 5 atomic % of chlorine atoms.

Growing community of inventors

Tokyo, Japan

Satoshi Omata