Mitsubishi Electric Corporation

Satoshi Okuda

Shimpei Ogawa

Masaaki Shimatani

Daisuke Fujisawa

Shoichiro Fukushima

Akihiko Furukawa

Tatsuro Watahiki

Tomohiro Ikeda

Takashi Takenaga

Tomohiro Tamaki

Tsuyoshi Kawakami

Masaharu Hattori

Hiroki Muraoka

Hisashi Saito

Yasuki Aihara

A thermal image acquisition device () acquires a thermal image of a balcony (). Setting circuitry () sets an outside area () corresponding to an outside of the balcony () and a balcony inside area () corresponding to inside of the balcony () in the thermal image. Heat source detection circuitry () detects a heat source () in the thermal image. Intrusion determination circuitry () determines that 'there is an intrusion' if a central position of the heat source () with the number of pixels and a temperature equal to or greater than thresholds moves from the outside area () to the balcony inside area () in the thermal image. A determination result output device () outputs a determination result of the intrusion determination circuitry ().

Crime prevention system and crime prevention method

Electromagnetic wave detector includes semiconductor layer, first insulating film, two-dimensional material layer, first electrode, second electrode, second insulating film, and control electrode. First insulating film is arranged on semiconductor layer. First insulating film is provided with opening. Two-dimensional material layer is electrically connected to semiconductor layer in opening. Two-dimensional material layer extends from above opening to first insulating film. Second insulating film is in contact with two-dimensional material layer. Control electrode is connected to two-dimensional material layer with second insulating film interposed therebetween.

Electromagnetic wave detector and electromagnetic wave detector assembly

An electromagnetic wave detector includes: a semiconductor layer in which a step is formed, the semiconductor layer having sensitivity to a detection wavelength; an insulating film disposed on the step and provided with an opening through which a part of the step is exposed; a two-dimensional material layer disposed on the insulating film and the opening, the two-dimensional material layer including a connection region electrically connected to the semiconductor layer in the opening; a first electrode disposed on the insulating film and electrically connected to the two-dimensional material layer; and a second electrode disposed on the semiconductor layer and electrically connected to the first electrode through the connection region of the two-dimensional material layer.

An object of the present invention is to suppress electrical contact between an outer peripheral portion of an intermediate electrode and a front surface electrode of a semiconductor chip without increasing the area of the semiconductor chip. A facing surface of the first intermediate electrode facing a first main electrode is smaller than a facing surface of the first main electrode facing the first intermediate electrode, and has an outer peripheral protective region and a connection region surrounded by the protective region. A pressure-contact semiconductor device includes a plurality of first conductor films partially formed in the connection region, and a first insulating film formed in regions in the connection region where no first conductor films are formed and in the protective region.

Pressure-contact semiconductor device

An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.

Electromagnetic wave detector

Reliability of a gate resistor element during high-temperature operation is enhanced. A semiconductor device includes a drift layer, a base layer, an emitter layer, a gate insulation film, a gate electrode, a gate pad electrode, a first resistance layer, and a first nitride layer. A resistor of the first resistance layer has a negative temperature coefficient. The first resistance layer is made of hydrogen-doped amorphous silicon. The first nitride layer is made of a silicon nitride layer or an aluminum nitride layer.

Semiconductor device with differences in crystallinity between components

This electromagnetic wave detector is provided with light reception graphene and reference graphene that are aligned on an insulating layer, first electrodes and second electrodes that are disposed so as to oppose each other and sandwich the light reception graphene and reference graphene, a gate electrode for applying a gate voltage to the light reception graphene and reference graphene, and a balanced circuit and detection circuit that are connected between the second electrodes. If electromagnetic waves are incident on the light reception graphene, photocarriers will be generated through in-band transition. If electromagnetic waves are incident on the reference graphene, photocarriers will not be generated because of the Pauli blocking effect. In a state where no electromagnetic waves are incident on the light reception graphene or reference graphene, the balanced circuit causes the first electrodes and second electrodes to have the same potential. The electrical signal between the second electrodes is detected in a state where electromagnetic waves are incident on the light reception graphene and reference graphene.

Electromagnetic wave detector, electromagnetic wave detector array, and electromagnetic wave detection method

This electromagnetic wave detector that detects electromagnetic waves by performing photoelectric conversion includes: a substrate; an insulating layer that is provided on the substrate; a graphene layer that is provided on the insulating layer; a pair of electrodes, which are provided on the insulating layer, and which are connected to both ends of the graphene layer, respectively; and a contact layer that is provided such that the contact layer is in contact with the graphene layer. The contact layer is formed of a material having a polar group, and a charge is formed in the graphene layer by having the contact layer in contact with the graphene layer.

An electromagnetic wave detector comprises: p-type and n-type graphenes arranged side by side on an insulating layer; a first electrode and a second electrode opposing each other via the graphenes; a gate electrode for applying an operation voltage to the p-type and n-type graphenes; a balance circuit connected between two second electrodes; and a detection circuit. The p-type graphene has a Dirac point voltage higher than the operation voltage. The n-type graphene has a Dirac point voltage lower than the operation voltage. In a state in which no electromagnetic wave is incident on the graphenes, the balance circuit places the first electrode and the second electrode at the same potential. In a state in which an electromagnetic wave is incident on the p-type and n-type graphenes, the detection circuit detects an electric signal between the second electrodes, and outputs an electric signal in the state in which the electromagnetic wave is incident.

An electromagnetic wave detector, which photoelectrically converts and detects an electromagnetic wave incident on a graphene layer, including: a substrate having a front surface and a back surface; a lower insulating layer provided on the front surface of the substrate; a ferroelectric layer and a pair of electrodes provided on the lower insulating layer, the pair of electrodes arranged to face each other with the ferroelectric layer sandwiched therebetween; an upper insulating layer provided on the ferroelectric layer; and a graphene layer arranged on the lower insulating layer and the upper insulating layer to connect the two electrodes. Alternatively, the electromagnetic wave detector includes: a graphene layer provided on the lower insulating layer; and a ferroelectric layer provided on the graphene layer with an upper insulating layer interposed therebetween and a pair of electrodes provided on the graphene layer to face each other with the ferroelectric layer sandwiched therebetween.

Electromagnetic wave detector and electromagnetic wave detector array

A semiconductor apparatus includes: a p-type base layer provided on a top surface side of an n-type drift layer; an n-type emitter layer provided on a top surface side of the p-type base layer; a first control electrode having a trench gate electrode embedded so as to reach from a surface layer of the n-type emitter layer to the n-type drift layer; a second control electrode having a trench gate electrode embedded so as to reach from the p-type base layer to the n-type drift layer; a p-type collector layer provided on a bottom surface side of the n-type drift layer; and a diode whose anode side and cathode side are connected to the first control electrode and the second control electrodes, respectively. It is possible to improve the controllability of dV/dt by a gate resistor.

Semiconductor apparatus

In a pressure contact type semiconductor apparatus, a second intermediate electrode on a second semiconductor chip has one or more second through holes. The one or more second through holes are fluidly separated from a space hermetically sealed by a cylindrical body, a first common electrode plate and a second common electrode plate. The pressure contact type semiconductor apparatus thereby has high reliability.

Growing community of inventors

Chiyoda-ku, Japan

Satoshi Okuda