Stanley Electric Co., Ltd

Satoshi Okada

Makoto Yoshida

Hiroyuki Kato

Kenichi Kondo

Naochika Horio

Takahiro Saida

Masahiro Akamatsu

A manufacture method for a ZnO-based light emitting device, includes the steps of: forming a ZnO-based semiconductor layer of a first conductivity type above a substrate; two-dimensionally growing a first ZnO-based semiconductor layer of a second conductivity type opposite to the first conductivity type above the ZnO-based semiconductor layer of the first conductivity type; and three-dimensionally growing a second ZnO-based semiconductor layer of the second conductivity type on the first ZnO-based semiconductor layer of the second conductivity type.

Manufacture method for ZnO-based light emitting device

The present invention is an apparatus and method for the fabrication of high quality silicon films by deposition of a silicon vapor onto a substrate. The silicon film fabrication apparatus includes a chamber, a crucible having an anode for melting a silicon metal, an anode for generating a DC arc discharge plasma, a substrate holder facing the crucible, and a heater for heating a substrate arranged in the substrate holder. The apparatus also includes a variable DC power supply, a cathode element including an electrode plate for generating the DC arc discharge plasma, a gas intake pipe penetrating through the electrode plate into the chamber, and an exhaust pipe having a valve facing the gas intake pipe. The silicon film is fabricated by disposing a substrate in a chamber, introducing hydrogen gas into the chamber, generating the DC arc discharge plasma, evaporating the silicon metal in the chamber, and depositing the silicon vapor on the substrate after the vapor passes through the DC arc discharge plasma.

Fabrication and method of producing silicon films

Growing community of inventors

Hadano, Japan

Satoshi Okada