Mitsubishi Gas Chemical Company, Inc.

Sharp Kabushiki Kaisha Corporation

Olympus Corporation

Satoshi Okabe

Kunio Yube

Taketo Maruyama

Satoshi Tamai

Tomoyuki Adaniya

Keiichi Tanaka

Tetsunori Tanaka

Wataru Nakamura

Kazuki Kobayashi

Chiharu Nishizawa

Kenichi Kitoh

Yoshio Nishimura

Hidenori Takeuchi

Kazuyo Narita

Masahide Matsubara

Jun Kokubu

Yoshitsugu Minamikawa

Toshiyuki Gotou

Mari Usui

Naoko Matsuya

The present invention relates to an etching solution for copper or a compound comprised mainly of copper, wherein the etching solution contains (A) a maleic acid ion source and (B) a copper ion source, and an etching method using the etching solution.

Etching solution for copper or a compound comprised mainly of copper

The present invention relates to an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, and a method of etching a multilayer thin film containing a copper layer and a molybdenum layer using the etching solution. There are provided an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, including (A) an organic acid ion supply source containing two or more carboxyl groups and one or more hydroxyl groups in a molecule thereof, (B) a copper ion supply source and (C) an ammonia and/or ammonium ion supply source, the etching solution having a pH value of from 5 to 8, and an etching method using the etching solution.

Etching liquid for film of multilayer structure containing copper layer and molybdenum layer

The present invention relates to an etching solution being capable of selectively etching a copper/molybdenum-based multilayer thin film with respect to a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film, wherein the etching solution comprises (A) hydrogen peroxide, (B) an inorganic acid containing no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms, and having an amino group and at least one group selected from an amino group and a hydroxyl group, (E) an azole, and (F) a hydrogen peroxide stabilizer, and has a pH of 2.5 to 5, as well as an etching method using the etching solution for selectively etching a copper/molybdenum-based multilayer thin film from a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film.

Etching solution for copper/molybdenum-based multilayer thin film

The present invention relates to an etchant and an etching process, which are preferred for use in etching of oxides containing at least indium and gallium, such as an oxide consisting of indium, gallium and oxygen or an oxide consisting of indium, gallium, zinc and oxygen. According to preferred embodiments of the present invention, an etchant comprising sulfuric acid or a salt thereof and a carboxylic acid (except for oxalic acid) or a salt thereof ensures a preferred etching rate, a good residue removal property and low corrosiveness to wiring materials when used in etching of oxides containing at least indium and gallium. Moreover, this etchant not only causes no precipitate but also retains a preferred etching rate even when the concentration of oxides dissolved in the etchant is elevated.

Etchant and etching process for oxides containing at least indium and gallium

The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Etching liquid for a copper/titanium multilayer thin film

An image pickup device that picks up an image of an object with an image pickup element, consisting of: a lens connecting portion that connects an interchangeable lens that can be attached and detached; a lens distinguishing portion that distinguishes the type of the interchangeable lens that is connected to the lens connecting portion; a plurality of optical filters that are capable of being disposed to the optical rear side of the interchangeable lens in the image pickup optical path when picking up an image of an object on an image pickup element with the interchangeable lens; and a moving portion that moves at least any of the plurality of optical filters to a position that corresponds to the type of the interchangeable lens that the lens distinguishing portion has distinguished.

Image pickup device

A stabilized aqueous solution of hydrogen peroxide comprising at least one metal element selected from the group consisting of tantalum, zirconium, and niobium. The aqueous solution of hydrogen peroxide has excellent storage stability and heat stability.

Stabilized aqueous solution of hydrogen peroxide

Growing community of inventors

Tokyo, Japan

Satoshi Okabe