Tokyo Electron Limited

Satoshi Nishimura

Yuji Mimura

Takeshi Tamura

Masataka Matsunaga

Hiroshi Maeda

Takashi Koga

Koji Mitsuhashi

Naoto Yoshitaka

Toshifumi Inamasu

Masaru Honda

Takahiro Masunaga

Naoki Imoto

Yohei Maeda

A separating system includes a placing unit, a removing apparatus and a transfer device. The placing unit is configured to place therein a first cassette allowed to accommodate a combined substrate in which a first substrate and a second substrate are bonded to each other with a separation layer therebetween, a second cassette allowed to accommodate the first substrate, and a third cassette allowed to accommodate the second substrate. The removing apparatus is configured to remove the separation layer by radiating laser light to the combined substrate. The transfer device is configured to perform a processing of transferring the combined substrate to the removing apparatus and a processing of transferring the first substrate and the second substrate separated from the combined substrate to the placing unit.

Separating system and separating method

A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface.

Bonding method for cleaning non-bonding surface of substrate

A component for use in a plasma processing apparatus, which is to be exposed to a plasma, includes a base material, an alumite layer and a thermally sprayed film. The base material has a plurality of through holes and a rough surface at which one end of each of the through holes is opended. The alumite layer is formed on a surface of the base material having the rough surface by an anodic oxidation process. The thermally sprayed film is formed on the rough surface with the alumite layer therebetween.

Component for use in plasma processing apparatus, plasma processing apparatus, and method for manufacturing the component

Bonding system with cleaning apparatus for cleaning non-bonding surface of substrate

A bonding system includes a substrate transfer device configured to transfer a first substrate and a second substrate in a normal pressure atmosphere, a surface modifying apparatus configured to modify surfaces of the first substrate and the second substrate to be bonded with each other in a depressurized atmosphere, a load lock chamber in which the first substrate and the second substrate are delivered between the substrate transfer device and the surface modifying apparatus and in which an internal atmosphere of the load lock chamber is switchable between an atmospheric pressure atmosphere and the depressurized atmosphere, a surface hydrophilizing apparatus configured to hydrophilize the modified surfaces of the first substrate and the second substrate, and a bonding apparatus configured to bond the hydrophilized surfaces of the first substrate and the second substrate by an intermolecular force.

Bonding systems

Disclosed is a processing liquid nozzle that supplies a processing liquid to a substrate. The processing liquid nozzle includes: a hollow nozzle body; a processing liquid flow space formed inside the nozzle body; and a processing liquid flow path configured to connect a processing liquid ejection port formed in a lower portion of the nozzle body and the processing liquid flow space with each other. The processing liquid flow path perforates the nozzle body in a vertical direction. The processing liquid flow path includes a foreign matter collecting space which is formed below an upper end of the processing liquid flow path so as to sediment and collect foreign matters in the processing liquid.

Processing liquid nozzle

An object of the present disclosure is to reduce a footprint. A bonding system of the present disclosure includes a first processing station, a second processing station, and a carry-in/out station. The first processing station includes a first conveyance region, a coating device, a heating device, and a first delivery block. The second processing station includes a plurality of bonding devices, a second conveyance region, and a second delivery block. Each of the plurality of bonding devices bonds the first substrate to the second substrate. The second conveyance region is a region configured to convey the first substrate and the second substrate to and from the plurality of bonding devices. The second delivery block delivers the first substrate, the second substrate and the superimposed substrate between the first conveyance region and the second conveyance region.

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Kumamoto, Japan

Satoshi Nishimura