Matsushita Electronics Corporation

Rohm Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Tokyo Electron Limited

Keio University

Satoshi Nakagawa

Shoji Matsumoto

Hideo Nikoh

Hiroki Tsujimura

Yoji Bito

Hideo Nikou

Yoshihisa Nagano

Isamu Nishimura

Shinichi Imai

Masahiro Ogasawara

Yoshifumi Tahara

Toyoji Ito

Michihiko Mifuji

Nobuhiro Jiwari

Yasuhiro Koike

Tomoyuki Sasaki

Shunsuke Kugo

Kyoko Miyamoto

Youji Bitou

Daihei Kajiwara

Hideo Ichimura

A semiconductor element separated from an original substrate includes: an element substrate; and an element constitution part formed on the element substrate, wherein a pattern indicating a position of the semiconductor element before separating the semiconductor element from the original substrate is formed on at least one of the element substrate and the element constitution part.

Semiconductor element, semiconductor element group, and method of manufacturing semiconductor element

A magnetoelectric converting element includes a substrate, a magnetosensitive layer, a first insulating layer, an underlying conductive layer, a second insulating layer, and a terminal conductor. The magnetosensitive layer is formed on the substrate. The first insulating layer is formed with first opening for exposing a part of the magnetosensitive layer. The underlying conductive layer is formed on the exposed part of the magnetosensitive layer. The second insulating layer is formed with a second opening for exposing a part of the underlying conductive layer. The terminal conductor is formed on the exposed part of the underlying conductive layer. The second opening is arranged to be located inside the first opening in plan view.

Magnetoelectric converting element and module utilizing the same

A surface light emitting device includes a polarized light source that emits polarized light; and a light guide plate including a light incident surface on which the polarized light emitted from the polarized light source is made incident, and a light emitting surface that emits light, the light guide plate being made of light transmissive resin having low birefringence in which retardation is one-fourth or less of a wavelength of the polarized light.

Surface light emitting device and polarization light source

A semiconductor light emitting device includes a substrate, and a light emitting portion that is disposed on the substrate, and includes an active layer formed of a group III nitride semiconductor using a nonpolar plane or a semipolar plane as a growth principal surface, in which side end surfaces of the active layer are specular surfaces.

Semiconductor light emitting device

A semiconductor substrate which is placed on a bottom electrode inside a chamber is dry-etched by creating plasma inside the chamber. By making the average surface roughness Ra of the bottom surface of a quartz-top plate placed on the bottom electrode be in a range of 0.2 to 5 .mu.m, adhesion between the quartz-top plate and the deposits caused by the dry etching is enhanced, and the number of particles suspended in the chamber is reduced. Furthermore, the function of enhancing the adhesion of deposits can be maintained even after cleaning of the quartz-top plate. As a result, the number of particles which adhere onto the semiconductor substrate is reduced and the semiconductor substrate can be processed in an extremely clean atmosphere.

Apparatus and method of producing an electronic device

A reactor is composed of a lower frame of a chamber, a quartz dome, an upper electrode, an 0 ring, and the like. A lower electrode and a substrate as a workpiece to be processed thereon are disposed in the reactor. The temperature of the quartz dome is maintained at a temperature of 180.degree. C. or higher by means of a heater. Fluorocarbon gas such as C.sub.2 F.sub.6 gas or C.sub.4 F.sub.8 gas is introduced into the reactor through a gas inlet and RF power from a first RF power source is applied to an antenna coil to produce a plasma and thereby etch an oxide film on the substrate. By heating the quartz dome to a high temperature, a deposit which hinders the release of oxygen from a wall face is prevented from being attached and the deposit on the bottom of the hole which causes an etch stop during processing is removed with oxygen. This prevents the etch stop during an etching process for forming a deep hole.

Apparatus and method for manufacturing semiconductor device

A highly reliable semiconductor IC circuit can be produced by this etching method: A resist layer is formed on a polysilicon layer which is formed on a silicon dioxide layer on a silicon substrate. The resist layer is used as a mask, and silicon oxide layer deposits thereon while polysilicon layer is being etched. Carbon emission out of the resist layer is thus restrained, and thereby a selectivity, an etching speed ratio of polysilicon layer vs. silicon dioxide layer, is substantially raised.

Method of etching polysilicon layer

A device insulating film, a lower-layer platinum film, a ferroelectric film, an upper-layer platinum film, and a titanium film are sequentially formed on a semiconductor substrate in this order. On the titanium film, a photoresist mask is further formed in a desired pattern. The thickness of the titanium film is adjusted to be 1/10 or more of the total thickness of a multilayer film consisting of the upper-layer platinum film, the ferroelectric film, and the lower-layer platinum film. The titanium film is then subjected to dry etching and the photoresist film is removed by ashing process. The titanium film thus patterned is used as a mask in etching the upper-layer platinum film, the ferroelectric film, and the lower-layer platinum film by a dry-etching method using a plasma of a gas mixture of chlorine and oxygen in which the volume concentration of oxygen gas is adjusted to be 40%. During the dry-etching process, the titanium film is oxidized to provide a high etching selectivity. Subsequently, the titanium film is removed by dry etching using a plasma of chlorine gas.

Method of manufacturing semiconductor devices

A manufacturing method of a semiconductor device including the steps of forming an insulating film on a semiconductor substrate, further laminating an aluminum film or an alloy film primarily containing aluminum, forming a mask having a certain pattern on the aluminum film or the alloy film primarily comprising aluminum, removing the aluminum film or the alloy film primarily comprising aluminum by etching the film by chlorination and/or bromination with plasma except the part on which the mask is formed, exposing the film to a gas plasma not liable to deposit or oxidize but capable of substituting fluoride for chloride and/or bromide, or to a gas mixture plasma comprising hydrogen and the above-mentioned gas, washing with water, and removing the mask to provide a manufacturing method of a semiconductor devices which can prevent the occurence of defective goods caused by the corrosion of interconnections comprising an aluminum film, or an alloy film primarily comprising aluminum, reduce manufacturing cost, improve the yield rate and reliability of the semiconductor device.

Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, where on top of a substrate having already-completed circuit elements and wiring, etc., an insulation underlayer a, Pt layer for a bottom electrode, a dielectric film and a Pt layer for a top electrode are shaped. A top electrode, capacitance insulation film and bottom electrode are formed by etching the Pt layer for the top electrode or the Pt layer for the bottom electrode using an etching gas contained an S component while composing a Pt and S compound. Alternatively the Pt and S compound can be composed first, and then the compound can be etched.

Manufacturing method of semiconductor devices

A method of manufacturing a semiconductor device, where on top of a substrate having already-completed circuit elements and wiring, etc., an insulation underlayer a, Pt layer for a bottom electrode, a dielectric film and a Pt layer for a top electrode are shaped. A top electrode, capacitance insulation film and bottom electrode are formed by etching the Pt layer for the top electrode or the Pt layer for the bottom electrode using an etching gas contained a S component while composing a Pt and S compound. Alternatively the Pt and S compound can be composed first, and then the compound can be etched.

Method of dry etching platinum using sulfur containing gas

Under a reduced pressure, an RF electric field is applied at a right angle to a main face of an article-to-be-treated such as a semiconductor, wafer placed on a cathode in treatment chamber. At the same time, a magnetic field is applied thereto by a magnetic field applying device to generate a plasma by a magnetron discharge. The magnetic field is formed in such a fashion that adjacent magnetic lines of flux are not in parallel with one another on the main face of the article-to-be-treated. Charged particles in the plasma drift in a diverging direction with Lorenz force so as to prevent electrification of the article-to-be-treated.

Apparatus and method for generating plasma of uniform flux density

A bottom electrode is of a double-layered structure composed of an aluminum portion and an anode oxide film. A surface of the aluminum portion is finished to a surface roughness of 1 .mu.m or less by polishing, for example, and the anode oxide film is grown by the anode oxidation technique. A surface of the anode oxide film is finished to a surface roughness of 1 .mu.m or less by polishing, for example. The polishing may be carried out by wrapping technique using diamond abrasive. The substrate slightly charged with descending cathode of plasma is weakly absorbed onto the bottom electrode, because the insulating film having a high degree of surface smoothness is interposed between the substrate and the bottom electrode. A large contact area and improved heat transfer are assured even with weak electrostatic absorption, thanks to excellent smoothness of the surface of the electrode. It is possible to control the temperature of the substrate without complicated mechanism.

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Kyoto, Japan

Satoshi Nakagawa