Semiconductor Energy Laboratory Co., Ltd.

Gkn Driveline Torque Technology Kk

Satoshi Murakami

Shunpei Yamazaki

Masayuki Sakakura

Mitsuaki Osame

Masahiko Hayakawa

Jun Koyama

Toru Takayama

Yukio Tanaka

Etsuko Fujimoto

Hidehito Kitakado

Kiyoshi Kato

Hideto Ohnuma

Mitsuhiro Ichijo

Yoshiharu Hirakata

Hisashi Ohtani

Osamu Nakamura

Shingo Eguchi

Misako Nakazawa

Toshimitsu Konuma

Takeshi Nishi

Taketomi Asami

Kengo Akimoto

Michio Shimizu

Kouji Moriya

Harumi Mori

Hajime Kimura

Junichi Koezuka

Tomoaki Atsumi

Noriko Miyagi

Saishi Fujikawa

Yosuke Tsukamoto

Masayuki Kajiwara

Yasuyuki Arai

Aya Anzai

Motomu Kurata

Takashi Ohtsuki

Takashi Hirosue

Hiroyuki Hata

Koichiro Tanaka

Atsuo Isobe

Kazutaka Kuriki

Takashi Hamada

Kaoru Tsuchiya

Hiromichi Godo

Koji Dairiki

Yu Yamazaki

Kei Takahashi

Hideomi Suzawa

Hisao Ikeda

Masaaki Hiroki

Masahiro Takahashi

Hiroki Ohara

Koji Ono

Tamae Takano

Mai Akiba

Kazutaka Inukai

Mikio Yukawa

Hirokazu Yamagata

Ryota Fukumoto

Aiko Shiga

Tamae Moriwaka

Ritsuko Nagao

Suguru Ozawa

Noriyuki Matsuda

Akira Tsunoda

Ayumi Ishigaki

Hideto Ohnumo

Masayuki Higuchi

Takahiro Kawakami

Akira Sugawara

Isao Hirota

Shigeharu Monoe

Yukiko Uehara

Norihiko Tashiro

Takashi Hirosure

Mitsuaki Osamè

A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

Display device

The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

Display device and method for manufacturing the same

It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is fanned so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

Semiconductor display device

A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

Semiconductor element and display device using the same

The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.

Light emitting apparatus and method for manufacturing the same

In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

Luminescent device having light-emitting element and transistor

It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished.

Display device and method for manufacturing the display device

It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

A display device includes first to fifth insulating films, first to third conductive films, semiconductor film, a planarization layer, an organic resin film, a pixel electrode, an opposing electrode and a light-emitting member. The first insulating film includes nitrogen. The second and third insulating films include oxygen. The fifth insulating film is an inorganic insulating film. The fourth insulating film, the fifth insulating film, the planarization layer and the organic resin film include first to fourth opening, respectively. An edge portion of the third opening and an edge portion of the fourth opening are rounded. Part of the third conductive film and part of the planarization layer are located in the second opening. Part of the pixel electrode and part of the organic resin film are located in the third opening. Part of the light-emitting member and part of the opposing electrode are located in the fourth opening.

This invention provides a semiconductor device having high operation performance and high reliability. An LDD regionoverlapping with a gate wiring is arranged in an n-channel TFTforming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regionsandnot overlapping with a gate wiring are arranged in an n-channel TFTforming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD regionthan in the LDD regionsand

Semiconductor device and fabrication method thereof

Luminescent device having light emitting element and transistor

Growing community of inventors

Kanagawa, Japan

Satoshi Murakami